2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)最新文献_第2页

Thermal characteristics of TIMs with elliptical particles 带有椭圆粒子的TIMs的热特性

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444306

R. Khiabani, Y. Joshi, C. Aidun

引用次数: 1

Issues in junction-to-case thermal characterization of power packages with large surface area 大表面积电源封装的结壳热特性问题

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444299

A. Vass-Várnai, Shan Gao, Z. Sárkány, Jongman Kim, Seogmoon Choi, G. Farkas, A. Poppe, M. Rencz

{"title":"Issues in junction-to-case thermal characterization of power packages with large surface area","authors":"A. Vass-Várnai, Shan Gao, Z. Sárkány, Jongman Kim, Seogmoon Choi, G. Farkas, A. Poppe, M. Rencz","doi":"10.1109/STHERM.2010.5444299","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444299","url":null,"abstract":"There are several ways to define the junction-to-case thermal resistance; however, it is rather challenging to characterize the heat-flow in a package by a single number in an accurate and reproducible way. For many power package families such as TO-type packages the thermal transient testing and the so-called dual interface method can give reliable results. The diverging point of structure functions from dual thermal transients gives a good picture of the material interfaces in such structures. However, the location and nature of the diverging point strongly depends on the shape and direction of the heat-spreading. If the package area is much larger than the dissipating chip the shape of the heat-flow changes when using different interfaces. This causes structure functions corresponding to the two setups deviate much before reaching the case surface. In this paper the origin of this phenomenon is investigated. Measurement and simulation results are compared on different large IGBT modules with several modifications in their structure enabling a detailed analysis of the heat-flow path. A comparison is given between heating only a small fraction of a large module and heating all chips. Some samples went through thermal cycling reliability tests which resulted in cracks below the chips. The effect of the reduced die-attach area is visualized with the help of structure functions.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"32 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124818872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Metal filament enhanced thermal energy storage applied to on-demand cooling of high power-density hand-held electronics 金属灯丝增强了热能储存，应用于高功率密度手持电子设备的按需冷却

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444311

M. Yaquinto, R. Wirtz

引用次数: 1

Development of ultra thin plate-type heat pipe with less than 1 mm thickness 厚度小于1mm的超薄板式热管的研制

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444289

H. Aoki, Nobuyoshi Shioya, M. Ikeda, Y. Kimura

{"title":"Development of ultra thin plate-type heat pipe with less than 1 mm thickness","authors":"H. Aoki, Nobuyoshi Shioya, M. Ikeda, Y. Kimura","doi":"10.1109/STHERM.2010.5444289","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444289","url":null,"abstract":"Authors are reporting development of ultra thin heat pipe and its performance. The ultra thin heat pipe has thickness less than 1.0 mm and high capability of maximum heat transfer capacity, so that this heat pipe can be installed for narrow space, in which it have been difficult to apply the plate heat pipe so far, of the ultra compact information equipment such as Net Book PC. In this ultra thin heat pipe, the mesh wick which was conducted oxidation-reduction process in high temperature was used in order to obtain sufficient capillary pressure for circulation of the working fluid. The ultra thin heat pipe consists of this mesh wick and the copper container which has thin wall. This structure ensures both sufficient capillary pressure and space of vapor flow. Two kinds of the ultra thin heat pipe were made; one was 1.0 mm thickness and the other was 0.7 mm thickness. These heat pipes had high maximum heat transfer capacity comparing with conventional groove heat pipe. In this paper, we proposed the ultra thin heat pipe which consists of high capillary pressure wick, and experimental investigation is discussed.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123599290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 36

Determination of channel temperature of AlGaN/GaN HEMT by electrical method 电学法测定AlGaN/GaN HEMT通道温度

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444296

Shiwei Feng, Peifeng Hu, Guangchen Zhang, Chunsheng Guo, Xuesong Xie, Tangsheng Chen

引用次数: 11

New approach to system server air flow/thermal design development, validation and advancement in green fan performance 系统服务器气流/热设计开发的新方法，绿色风扇性能的验证和进步

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444303

M. Vogel, Tony Chen, Steve Doan, H. Harrison, Rajeesh Nair

引用次数: 7

Interaction of scaling trends in processor architecture and cooling 处理器架构和冷却中缩放趋势的相互作用

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444290

Wei Huang, M. Stan, S. Gurumurthi, R. J. Ribando, K. Skadron

引用次数: 41

Thermoreflectance imaging measurement of in-plane thermal properties of thin-film structures 薄膜结构面内热性能的热反射成像测量

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444284

Xi Wang, A. Shakouri, A. Mavrokefalos, Y. Lee, H. Kong, Li Shi

引用次数: 1

Thermal characterization of Fan-in Package-on-Packages 扇内封装对封装的热特性

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444317

Nandini Nagendrappa, Nicole Okamoto, F. Barez

{"title":"Thermal characterization of Fan-in Package-on-Packages","authors":"Nandini Nagendrappa, Nicole Okamoto, F. Barez","doi":"10.1109/STHERM.2010.5444317","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444317","url":null,"abstract":"The 3D market continues to be driven by mobile applications. The technology integrates devices or packages in the vertical direction to achieve reduction in size and cost along with high performance, challenging IC package designers to maintain a low enough junction temperature without using fans and heat sinks. The study carried out in the paper investigates the effect of design criteria on the thermal performance of a new generation of stacked packages, called Fan-in Package-on-Packages (FiPoPs). The main goal of the undertaken project was to investigate the change in thermal performance in the test model due to variation in the internal thermal design parameters only. Based on the research of earlier generation models, the parameters chosen to analyze in this work included (a) number of thermal vias (b) solder ball I/O density and (c) die size. Due to limited design information pertaining FiPoPs, geometrical and materials parameters for a typical FiPoP were acquired from Statschippac, Inc. This stacked package within FiPoP chosen for analysis included two metal layers, 14 × 14 mm body size, 9 mm × 9 mm die size, 0.075 mm thickness for both top and bottom packages and 0.5 mm solder ball pitch. The results presented by the study show that the thermal resistance of the bottom package of a FiPoP decreases with increase in number of thermal vias and solder balls placed under the package. The decrease in thermal resistance with addition of thermal vias alone is small; solder balls must be added as well to result in significant improvement. As expected, the thermal resistance of the entire package increases as the die size drops.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122810888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The junction-to-case thermal resistance: A boundary condition dependent thermal metric 结壳热阻:依赖于热度量的边界条件

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444298

D. Schweitzer

引用次数: 36