2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)最新文献

Thermo-mechanical design challenges in silicon validation platforms 硅验证平台中的热机械设计挑战

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444280

R. Mohammed, Ashok N. Kabadi

{"title":"Thermo-mechanical design challenges in silicon validation platforms","authors":"R. Mohammed, Ashok N. Kabadi","doi":"10.1109/STHERM.2010.5444280","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444280","url":null,"abstract":"Rapid advances in the semiconductor process technology have led to miniaturization of transistor features and advent of multi-core architecture. At the silicon-level while bus speeds, features and functionalities are increasing, at the system-level, there is a steady and incessant trend of volume reduction, compact component placement on the board and noise reduction. These silicon and system trends make the thermo-mechanical designs challenging. Validation platforms are used to validate microprocessors/chipsets to ensure world-class quality and reliable Intel products. These platforms usually have an open chassis to allow ease of accessibility for silicon debug. In this paper, we present the design challenges and opportunities faced in validation from thermo-mechanical perspective. The requirements for sockets, nominal cooling thermal solutions, temperature margining thermal tools, and limited Keep-Out-Volume (KOV) on the motherboard create significant challenges in designing mechanical retention mechanism for sockets, thermal and thermal tools. We present the design methodology of active air cooling coupled with mechanical retention. We also demonstrate the design challenges and innovations of peltier-based temperature margining thermal tools used for fault detection acceleration. These methodologies can serve as Best Known Methods (BKMs) for delivering novel designs for nominal cooling and temperature margining thermal tools to address the small factor, dense pad-pitch, high pin-count and high TDP challenges of validation platforms.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116825523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phonon relaxation times of germanium determined by molecular dynamics at 1000 K 用分子动力学测定锗在1000 K时的声子弛豫时间

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444279

J. Goicochea, B. Michel

引用次数: 3

Fabrication and characterization of carbon-aluminum thermal management composites 碳-铝热管理复合材料的制备与表征

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444308

N. Jiang, J. Novak, R. Fink

引用次数: 4

Thermo-mechanical simulative study for 3D vertical stacked IC packages with spacer structures 具有间隔结构的三维垂直堆叠IC封装热力学模拟研究

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444314

M. Hsieh, Chih-Kuang Yu, Sheng-Tsai Wu

{"title":"Thermo-mechanical simulative study for 3D vertical stacked IC packages with spacer structures","authors":"M. Hsieh, Chih-Kuang Yu, Sheng-Tsai Wu","doi":"10.1109/STHERM.2010.5444314","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444314","url":null,"abstract":"As the market demands for high performance, miniaturized, better reliability and lower-priced portable electronic products, the integration of a system into three-dimensional (3D) chip stacking packages are presently used to achieve these targets. Even though the miniaturization of system scaling, low power consumption and better electrical performance can be performed by 3DIC packaging technologies, thermo-mechanical problems occur due to the 3D stacking feature. Because dice are vertically stacked in 3DIC packages, higher junction temperature as well as temperature concentration phenomenon inside the stacking dice are resulted in and cause larger corresponding thermal induced stresses. Hence, the problems of heat dissipation and thermal induced stresses always cause failures or fatigues in 3D stacked IC packages and become critical reliability issues. In order to realize thermo-mechanical coupling effects in 3D vertical stacked IC packages with spacer structures, four layer vertical stacked dice (bare die to bare die) with TSV (through-silicon-via), metal bumps, and spacer structures are constructed as the test vehicle. In the thermo-mechanical coupling simulative study, the accurate convection heat transfer coefficients that obtained from computational fluid dynamics technique are used as the applied boundary conditions in finite element analysis (FEA) modeling to obtain precisely thermal stress distributions. Therefore, not only the temperature distributions and thermal characteristics (thermal resistance and junction temperature) can be resolved but also the corresponding precisely thermal stress distributions can be illustrated by using FEA. These results can be most effectively used as design guidelines to engineers if thermo-mechanical coupling solutions for 3D vertical stacked IC package with the conditions of dice powered on are required.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128215509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 20

Practical CFD modeling of synthetic air jets for thermal management of electronics 电子热管理中合成空气射流的实用CFD建模

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444321

R. Remsburg, T. Lucas, Ronald J. Binshtok

{"title":"Practical CFD modeling of synthetic air jets for thermal management of electronics","authors":"R. Remsburg, T. Lucas, Ronald J. Binshtok","doi":"10.1109/STHERM.2010.5444321","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444321","url":null,"abstract":"This paper discusses experimental and theoretical results for several embodiments of pulsed air jet technology. Pulsed air jets, also called synthetic jets, require an implementation strategy that is quite different from steady-flow devices such as fans and blowers. Simply replacing a fan with a synthetic jet will most likely result in a failure to cool a device as intended. The principal goal of this paper is to determine whether a commercially available CFD code can be used as a design tool for the optimization of synthetic jet systems. To this end, a general purpose CFD code was used to estimate the flow spreading, volume of entrainment, and heat transfer characteristics of a synthetic air jet. Commercially available CFD software, FloEFD, was used to make these determinations. The methods explained are relevant primarily to this CFD software, but are also germane to a number of other codes. Because synthetic jets are a transient phenomenon, a change in the specific heat of the model materials is applied in order to increase the speed of the thermal solution. A detailed analysis of the complete actuator assembly is unnecessary if the velocity/time or pressure/time waveform at the air jet port is used as an input parameter. Three experiments were performed to validate the CFD models, 1. flow divergence, 2. volumetric entrainment, and 3. heat transfer.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116113072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Temperature dependent thermal resistance in power LED assemblies and a way to cope with it 功率LED组件中的温度相关热阻及其解决方法

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444276

A. Poppe, G. Molnár, Tamás Temesvölgyi

引用次数: 30

Thermal performance of a dual 1.2 kV, 400 a silicon-carbide MOSFET power module 双1.2 kV, 400 a碳化硅MOSFET功率模块的热性能

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444297

L. Boteler, D. Urciuoli, G. Ovrebo, D. Ibitayo, R. Green

引用次数: 12

Application of thermoreflectance imaging to identify defects in photovoltaic solar cells 热反射成像在光伏太阳能电池缺陷识别中的应用

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444282

D. Kendig, J. Christofferson, G. Alers, A. Shakouri

引用次数: 7

Dropwise condensation in vapor chambers 蒸汽室中的滴状冷凝

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444286

R. Bonner

{"title":"Dropwise condensation in vapor chambers","authors":"R. Bonner","doi":"10.1109/STHERM.2010.5444286","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444286","url":null,"abstract":"Electronic devices continue to shrink in size while dissipating more heat. The size of the air cooled heat sinks required to remove this heat has increased while the size of the heat source has decreased. These trends have resulted in large conduction gradients across the base of the heat sinks, resulting in decreased thermal performance. A passive and reliable method of minimizing the spreading resistance in air cooled heat sinks is to embed a vapor chamber in the base of the heat sink. A vapor chamber is a two-phase heat transfer device that uses capillary forces to isothermally circulate a working fluid at saturated conditions. Provided that the vapor chamber is circulating fluid properly (within its capillary limit) the thermal resistance of the vapor chamber is limited by the evaporating and condensing processes in the vapor chamber. Much attention has been paid to the evaporating process since the heat flux of the evaporating process is generally many times higher than that of the condensing process. However, heat fluxes in the condensing regions of vapor chambers have risen to the point where they can't be neglected. Described here is a novel method of improving the condensation performance in vapor chamber devices by using self-assembled monolayers to promote dropwise condensation. In other applications, dropwise condensation has been shown to improve the condensation heat transfer coefficient by an order of magnitude over the typical filmwise condensation surfaces found in vapor chambers. Presented here are condensation test data comparing the performance of filmwise and dropwise condensation surfaces in vapor chambers.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127633152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Study of an LED device with a honeycomb heat sink 带蜂窝散热器的 LED 设备研究

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444277

H. K. Ma, B. R. Chen, H. Lan, C. Chao

{"title":"Study of an LED device with a honeycomb heat sink","authors":"H. K. Ma, B. R. Chen, H. Lan, C. Chao","doi":"10.1109/STHERM.2010.5444277","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444277","url":null,"abstract":"Previous studies show that the lighting quality of LED largely depends on operating temperature. LED without thermal management may fail early due to thermal runaway, epoxy degradation, and thermal stress under high-operating temperatures. In this study, the performance of a honeycomb heat sink was investigated by experimentation and three-dimensional numerical models. Two kinds of honeycomb models were proposed to demonstrate the performance of a heat sink with single and multiple heat sources for LED thermal management. The performances of innovative honeycomb heat sinks depend on the number of cells, aspect ratio, and the rib-space ratio. The simulated results indicated that the performance varies a little when the conductivity is over 50W/mK. Compared to the simulated heat flux ratio 0.95, the measured heat flux ratio 0.93 at θ=30° was slightly lower. The measured performance of the lump and stack (5 pieces) honeycomb heat sink can respectively keep 13.761W and 13.338W under the dummy heater at 67°C and the ambient temperature at 27°C. The innovative design with nine pieces of layers that are drilled to reduce their weight can effectively dissipate the heat by natural convection in the application of a high-power LED street lamp.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129199939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16