Thermo-mechanical simulative study for 3D vertical stacked IC packages with spacer structures

M. Hsieh, Chih-Kuang Yu, Sheng-Tsai Wu
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引用次数: 20

Abstract

As the market demands for high performance, miniaturized, better reliability and lower-priced portable electronic products, the integration of a system into three-dimensional (3D) chip stacking packages are presently used to achieve these targets. Even though the miniaturization of system scaling, low power consumption and better electrical performance can be performed by 3DIC packaging technologies, thermo-mechanical problems occur due to the 3D stacking feature. Because dice are vertically stacked in 3DIC packages, higher junction temperature as well as temperature concentration phenomenon inside the stacking dice are resulted in and cause larger corresponding thermal induced stresses. Hence, the problems of heat dissipation and thermal induced stresses always cause failures or fatigues in 3D stacked IC packages and become critical reliability issues. In order to realize thermo-mechanical coupling effects in 3D vertical stacked IC packages with spacer structures, four layer vertical stacked dice (bare die to bare die) with TSV (through-silicon-via), metal bumps, and spacer structures are constructed as the test vehicle. In the thermo-mechanical coupling simulative study, the accurate convection heat transfer coefficients that obtained from computational fluid dynamics technique are used as the applied boundary conditions in finite element analysis (FEA) modeling to obtain precisely thermal stress distributions. Therefore, not only the temperature distributions and thermal characteristics (thermal resistance and junction temperature) can be resolved but also the corresponding precisely thermal stress distributions can be illustrated by using FEA. These results can be most effectively used as design guidelines to engineers if thermo-mechanical coupling solutions for 3D vertical stacked IC package with the conditions of dice powered on are required.
具有间隔结构的三维垂直堆叠IC封装热力学模拟研究
随着市场对高性能、小型化、高可靠性和低价格便携式电子产品的需求,目前采用将系统集成到三维(3D)芯片堆叠封装中来实现这些目标。尽管3DIC封装技术可以实现系统规模的小型化、低功耗和更好的电气性能,但由于3D堆叠特性,会出现热机械问题。由于在3DIC封装中骰子是垂直堆叠的,导致了更高的结温以及堆叠骰子内部的温度集中现象,从而导致了更大的相应热致应力。因此,散热和热应力问题总是导致3D堆叠IC封装失效或疲劳,并成为关键的可靠性问题。为了实现具有间隔层结构的3D垂直堆叠IC封装的热-机械耦合效应,构建了具有TSV (through-silicon-via)、金属凸点和间隔层结构的四层垂直堆叠骰子(裸晶对裸晶)作为测试载体。在热力耦合仿真研究中,利用计算流体力学技术得到的精确对流换热系数作为有限元建模的应用边界条件,得到精确的热应力分布。因此,利用有限元分析不仅可以求解温度分布和热特性(热阻和结温),而且可以精确地描述相应的热应力分布。如果需要三维垂直堆叠IC封装的热-机械耦合解决方案,这些结果可以最有效地作为工程师的设计指南。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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