2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)最新文献_第5页

Thermal analysis of opto-electronic packages — the Delphi-based compact thermal model and other modeling practices in the industry 光电封装的热分析-基于delphi的紧凑型热模型和行业中的其他建模实践

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444281

A. Raghupathy, Jun Shen

{"title":"Thermal analysis of opto-electronic packages — the Delphi-based compact thermal model and other modeling practices in the industry","authors":"A. Raghupathy, Jun Shen","doi":"10.1109/STHERM.2010.5444281","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444281","url":null,"abstract":"The current work presents a comparative study of industry-wide practice of modeling opto-electronic packages for their thermal analysis, with a focus on the DELPHI-type model. A single opto-electronic package that has a representative construction of other types of opto-electronic packages is chosen for this study. This package is Small-Form Factor Pluggable device, commonly referred to as the SFP. Based on the required level of accuracy and computational resources consumed, the SFP is modeled using one of the following techniques; a lumped system of fixed thermal conductivity, a two-resistor network model, a multi-resistor DELPHI-type network model and a detailed geometrical model. In the current study, these modeling techniques are studied in a comparative mode. The performances of the different models are compared to a validated detailed model. Boundary conditions used for comparing the different models with the detailed model is decided based on practical situations commonly encountered by SFPs in system-level models. The practical situations also include cage-level installation of the SFPs. In addition to presenting the performance of each modeling technique with respect to the detailed model, discussion on their advantages and limitations are also included in this paper.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132489551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The development of a valveless piezoelectric micropump 无阀压电微泵的研制

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444312

H. K. Ma, B. R. Chen

{"title":"The development of a valveless piezoelectric micropump","authors":"H. K. Ma, B. R. Chen","doi":"10.1109/STHERM.2010.5444312","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444312","url":null,"abstract":"Previous studies have indicated that the performance of the micropump is influenced by the driving voltage, frequency, valves, and pump chambers. In this study, an innovative one-side actuating valveless micropump is proposed and developed to actuate liquid in one direction with high flow rates and pump heads. The three-dimensional, transition numerical models of the micropumps were also employed to predict its performance. It was found that the inlet choking phenomenon was the major reason to make the one-side actuating micropump valve-free, with a flow rate of 0.088 mL/s and a pump head of 45.6 Pa. By adding the secondary chamber, the performance can be improved to 0.989 mL/s and 1291.0 Pa. The maximum pump head in this study was obtained at 1522.5 Pa by using the 0.3-mm-thick secondary diaphragm. In addition, the performance of the micropump can be further improved by adding a nozzle/diffuser element, thus enabling it to achieve the maximum flow rate of 1.133 mL/s at the frequency of 150 Hz. Without additional check valves, the one-side actuating piezoelectric valveless micropump with compact design can perform more accurately and reliably in the applications of biomedical and electronics cooling.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128688481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Solar Photovoltaic Cell thermal measurement issues 太阳能光伏电池热测量问题

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444302

B. Siegal

引用次数: 12

Alkali Silicate Glass based thermal coatings 碱硅酸盐玻璃基热涂层

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444309

N. Lower, R. Wilcoxon

引用次数: 2

Thermal performance of a Direct-Bond-Copper Aluminum Nitride manifold-microchannel cooler 直接结合铜铝氮化管-微通道冷却器的热性能

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444313

D. Sharar, Nicholas R. Jankowski, B. Morgan

引用次数: 14

Energy conservation approach for data center cooling using heat pipe based cold energy storage system 基于热管的冷储能系统在数据中心制冷中的节能方法

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI: 10.1109/STHERM.2010.5444304

X. P. Wu, M. Mochizuki, K. Mashiko, Thang Nguyen, V. Wuttijumnong, Gerald Cabsao, Randeep Singh, A. Akbarzadeh

{"title":"Energy conservation approach for data center cooling using heat pipe based cold energy storage system","authors":"X. P. Wu, M. Mochizuki, K. Mashiko, Thang Nguyen, V. Wuttijumnong, Gerald Cabsao, Randeep Singh, A. Akbarzadeh","doi":"10.1109/STHERM.2010.5444304","DOIUrl":"https://doi.org/10.1109/STHERM.2010.5444304","url":null,"abstract":"In the present paper, design and economics of the novel type of thermal control system for data center cooling using heat pipe based cold energy storage system has been proposed and discussed. Two types of cold energy storage system namely: Ice storage system and cold water storage system are explained and sized for datacenter with heat output capacity of 8800 KW. Basically, the cold energy storage will help to downsize the chiller and decrease its runtime that will save electricity related cost and decrease green house gas emissions from the electricity generation. The proposed cold energy storage system can be connected in the existing datacenter facilities without major design changes. Out of the two proposed systems, ice based cold energy storage system is mainly recommended for small to medium size datacenters which are located in very cold locations and offers long term seasonal storage facility. Water based cold energy storage system provides more compact size with short term storage (hours to days) and is potential for both small to large size datacenters with yearly average temperature below the cold storage water temperature (~ 25°C). The cold water storage system is sized on the basis of metrological conditions in Poughkeepsie, USA. As an outcome of the thermal and cost analysis, an optimum size of cold energy storage system should be designed to handle 60% of the yearly datacenter load. Preliminary results obtained from the experimental system design to test the ice formation potential of the heat pipe based cold energy storage system has shown good result and validated the proposed concept.","PeriodicalId":111882,"journal":{"name":"2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115167111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Cooling solutions for processor Infrared Thermography 处理器红外热成像的冷却解决方案

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-02-01 DOI: 10.1109/STHERM.2010.5444292

E. K. Ardestani, F. Mesa-Martinez, Jose Renau

引用次数: 16