Phonon relaxation times of germanium determined by molecular dynamics at 1000 K

J. Goicochea, B. Michel
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引用次数: 3

Abstract

Molecular dynamics simulations (MD) and the normal mode decomposition are used to determine the phonon relaxation times of acoustical and optical modes of germanium (Ge) at 1000 K and 1 atm. The relaxation times are calculated from the temporal decay of the autocorrelation function of the total energy of each normal mode in the [100] direction. Two sets of force field parameters are used to obtain the total energy of each phonon mode. We have found, under the assumption of an isotropic crystal, that the acoustic modes contribute about 90 % to the overall thermal conductivity (being the contribution of longitudinal acoustic modes 60 %), and that the behavior of the relaxation times of acoustic modes can be well represented by power functions with exponents close to 2. Both results are in agreement with previous estimations for silicon (Si) and Ge using MD and ab initio simulations, respectively. Lastly, we have found that only one parameter set is able to reproduce the experimental thermal conductivity at this temperature.
用分子动力学测定锗在1000 K时的声子弛豫时间
利用分子动力学模拟(MD)和正模分解方法确定了锗(Ge)在1000 K和1atm下声子弛豫时间和声子弛豫时间。弛豫时间由各正态模态总能量的自相关函数在[100]方向上的时间衰减计算得到。利用两组力场参数获得了每个声子模的总能量。我们发现,在各向同性晶体的假设下,声模对总热导率的贡献约为90%(其中纵向声模的贡献为60%),并且声模的弛豫时间的行为可以用指数接近2的幂函数很好地表示。这两个结果都与先前分别使用MD和从头算模拟对硅(Si)和锗的估计一致。最后,我们发现只有一个参数集能够再现该温度下的实验导热系数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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