电学法测定AlGaN/GaN HEMT通道温度

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 2010-04-08 DOI:10.1109/STHERM.2010.5444296

Shiwei Feng, Peifeng Hu, Guangchen Zhang, Chunsheng Guo, Xuesong Xie, Tangsheng Chen

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引用次数: 11

摘要

本文研究了AlGaN/GaN HEMT的正向肖特基结电压与温度的线性关系。采用快速开关电路技术，将其作为温敏参数，确定通道正常工作状态下的温度。对测试数据进行回归，减小了散射误差。从瞬态加热响应曲线中提取热阻构成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Determination of channel temperature of AlGaN/GaN HEMT by electrical method

In this paper, the linear relationship of forward Schottky junction voltage of AlGaN/GaN HEMT with temperature was investigated. It was used as temperature sensitive parameter to determine the channel temperature at its normal working state by fast switch circuit technique. The regress of tested data was used to reduce the scatter error too. The thermal resistance constitution was extracted from the transient heating response curves.

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来源期刊

2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)

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