Issues in junction-to-case thermal characterization of power packages with large surface area

A. Vass-Várnai, Shan Gao, Z. Sárkány, Jongman Kim, Seogmoon Choi, G. Farkas, A. Poppe, M. Rencz
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引用次数: 16

Abstract

There are several ways to define the junction-to-case thermal resistance; however, it is rather challenging to characterize the heat-flow in a package by a single number in an accurate and reproducible way. For many power package families such as TO-type packages the thermal transient testing and the so-called dual interface method can give reliable results. The diverging point of structure functions from dual thermal transients gives a good picture of the material interfaces in such structures. However, the location and nature of the diverging point strongly depends on the shape and direction of the heat-spreading. If the package area is much larger than the dissipating chip the shape of the heat-flow changes when using different interfaces. This causes structure functions corresponding to the two setups deviate much before reaching the case surface. In this paper the origin of this phenomenon is investigated. Measurement and simulation results are compared on different large IGBT modules with several modifications in their structure enabling a detailed analysis of the heat-flow path. A comparison is given between heating only a small fraction of a large module and heating all chips. Some samples went through thermal cycling reliability tests which resulted in cracks below the chips. The effect of the reduced die-attach area is visualized with the help of structure functions.
大表面积电源封装的结壳热特性问题
有几种方法来定义结壳热阻;然而,用单个数字准确再现包装内的热流特征是相当具有挑战性的。对于许多功率封装系列,如to型封装,热瞬态测试和所谓的双接口方法可以给出可靠的结果。双热瞬态结构函数的发散点可以很好地描述这种结构中的材料界面。然而,发散点的位置和性质在很大程度上取决于热扩散的形状和方向。如果封装面积远大于散热芯片,则使用不同的接口时,热流的形状会发生变化。这导致两种设置对应的结构功能在到达外壳表面之前偏差很大。本文对这一现象的成因进行了探讨。测量和仿真结果在不同的大型IGBT模块上进行了比较,并对其结构进行了一些修改,从而可以详细分析热流路径。给出了只加热大模块的一小部分和加热所有芯片的比较。一些样品经过热循环可靠性测试,导致芯片下方出现裂纹。借助结构函数,直观地展示了减小模附面积的效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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