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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)最新文献

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Single event latchup protection of integrated circuits 集成电路的单事件闭锁保护
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698919
P. Layton, D. Czajkowski, J. Marshall, H. Anthony, R. Boss
{"title":"Single event latchup protection of integrated circuits","authors":"P. Layton, D. Czajkowski, J. Marshall, H. Anthony, R. Boss","doi":"10.1109/RADECS.1997.698919","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698919","url":null,"abstract":"This paper will report the test results from the development of the single event latchup protection circuitry (referred to as Space Electronics Inc.'s (SEIs) Latchup Protection Technology (LPT/sup TM/)) for several integrated circuits which are known to latchup at unacceptably low LET energies for space applications. Two devices were evaluated with LPT/sup TM/; the ADS7805 16 bit analog to digital converter and the GF10009 FPGA (Gatefield's 9000 gate flash programmable gate array).","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127538043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
SEB occurrence in a VIP: influence of the epi-substrate junction VIP中SEB的发生:外延-衬底结的影响
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.699000
E. Lorfèvre, C. Sudre, C. Dachs, C. Detcheverry, J. Palau, J. Gasiot, M. Calvet, J. Garnier, R. Ecoffet
{"title":"SEB occurrence in a VIP: influence of the epi-substrate junction","authors":"E. Lorfèvre, C. Sudre, C. Dachs, C. Detcheverry, J. Palau, J. Gasiot, M. Calvet, J. Garnier, R. Ecoffet","doi":"10.1109/RADECS.1997.699000","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699000","url":null,"abstract":"Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129026830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
EXEQ II and III: On-board experiments for the study of single events EXEQ II和III:用于研究单一事件的机载实验
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698985
S. Duzellier, D. Falguère, R. Ecoffet, I. Tsourilo
{"title":"EXEQ II and III: On-board experiments for the study of single events","authors":"S. Duzellier, D. Falguère, R. Ecoffet, I. Tsourilo","doi":"10.1109/RADECS.1997.698985","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698985","url":null,"abstract":"SEE Spaceflight measurements are presented on various SRAM and DRAM in the MIR station orbit. The results permitted the error mapping and the localisation of hazardous regions.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129160259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Implementation of total dose constraints at the design level of full custom bipolar integrated circuits 在全定制双极集成电路的设计水平上实现总剂量限制
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698868
Y. Deval, P. Fouillat, X. Montagner, R. Briand, A. Touboul, J. David, L. Bonora, M. Calvet, P. Calvel
{"title":"Implementation of total dose constraints at the design level of full custom bipolar integrated circuits","authors":"Y. Deval, P. Fouillat, X. Montagner, R. Briand, A. Touboul, J. David, L. Bonora, M. Calvet, P. Calvel","doi":"10.1109/RADECS.1997.698868","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698868","url":null,"abstract":"This paper presents a design approach in order to deal with total-dose induced degradation with commercial IC processes. Devices behavior limitations are presented, and layout-based techniques are proposed to reduce bipolar transistors radiation sensitivity. The global design procedure combines these layout hardened devices with rad-dedicated design techniques. In addition, a gated lateral PNP has been designed to evaluate the ionizing radiation effects on its electrical characteristics. Its voltage controlled current gain remains sufficiently large once irradiated to expect an effective hardening of the analog function. To illustrate this approach, a commercial BiCMOS integrated circuit has been fabricated in an Austria Mikro Systeme process. The test vehicle revealed a good radiation hardness level.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130697517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Electrical and optical response of a Mach-Zehnder electrooptical modulator to pulsed irradiation 脉冲辐照下马赫-曾德电光调制器的电学和光学响应
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698954
C. D'hose, Eric Cassan, J. Baggie, O. Musseau, J. Leray
{"title":"Electrical and optical response of a Mach-Zehnder electrooptical modulator to pulsed irradiation","authors":"C. D'hose, Eric Cassan, J. Baggie, O. Musseau, J. Leray","doi":"10.1109/RADECS.1997.698954","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698954","url":null,"abstract":"Radiation hardness of LiNbO/sub 3/:Ti Mach-Zehnder optomodulators under high energy electron pulses at high dose rate is studied for the first time. Both electrical and optical measurements are performed at various dose rates and electrical bias conditions. Electrical and optical perturbations are observed to be synchronous of the irradiation pulse, below a total dose threshold of 1 krad(Si). The optical behavior of the various optomodulators under test is related to their structure. As a matter of fact, optical perturbations are due either to photocurrent which superposes to electrical bias, or to an alteration of couplers characteristics.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126600984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A new approach to modelling radiation noise in CCD's CCD辐射噪声建模的新方法
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698953
A. Chugg, G. Hopkinson
{"title":"A new approach to modelling radiation noise in CCD's","authors":"A. Chugg, G. Hopkinson","doi":"10.1109/RADECS.1997.698953","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698953","url":null,"abstract":"The energy depositions reported by Monte Carlo electron-photon radiation transport codes are subject to a random error due to the finite number of particle histories used to generate the results. These statistical variations, normally a nuisance, may also be identified with the real radiation noise effects experienced by CCD pixels in persistent radiation environments. This paper explores the practicability of such radiation noise modelling by applying the ACCEPT code from the ITS suite to the case of a shielded CCD exposed to an electron flux. The results are compared with those obtained in a subsequent electron irradiation of the CCD by a Van de Graaff accelerator.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Study of radiation effects on low voltage memories 辐射对低压存储器影响的研究
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.699001
B. Doucin, C. Poivey, C. Carlotti, A. Salminen, K. Ojasalo, R. Ahonen, P. Poirot, L. Baudry, R. Harboe Sorensen
{"title":"Study of radiation effects on low voltage memories","authors":"B. Doucin, C. Poivey, C. Carlotti, A. Salminen, K. Ojasalo, R. Ahonen, P. Poirot, L. Baudry, R. Harboe Sorensen","doi":"10.1109/RADECS.1997.699001","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699001","url":null,"abstract":"Total Dose, heavy ion and proton irradiation were performed on 6 types of commercial memories (two 1 Mbit SRAMs, two 16 Mbit DRAMs, two 8 Mbit Flash memories), in order to evidence the effect of power supply on the results.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116146337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Absolute digital converter system for nuclear robotics 核机器人用绝对数字转换系统
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698917
J. Keurinck
{"title":"Absolute digital converter system for nuclear robotics","authors":"J. Keurinck","doi":"10.1109/RADECS.1997.698917","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698917","url":null,"abstract":"This paper illustrates through the example of a hardened absolute digital converter, one way to meet the accuracy and hardening requirements of the nuclear robotics field. The method consists in performing iterations until a trade-off is found between architecture choices and devices choices, in order to achieve a given hardening level. The system is found to be still functional after 150 kGy. Such a method can be applied to other equipments used in nuclear robotics.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121221128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of single event effects at grazing angle 掠角下单事件效应分析
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698992
A. Campbell, O. Musseau, V. Ferlet-Cavrois, W. Stapor, P. McDonald
{"title":"Analysis of single event effects at grazing angle","authors":"A. Campbell, O. Musseau, V. Ferlet-Cavrois, W. Stapor, P. McDonald","doi":"10.1109/RADECS.1997.698992","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698992","url":null,"abstract":"Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127584035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
The analysis of radiation effects on combined bipolar-MOS structure 双极- mos复合结构的辐射效应分析
RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698876
N. Jankovic, D. Pantic
{"title":"The analysis of radiation effects on combined bipolar-MOS structure","authors":"N. Jankovic, D. Pantic","doi":"10.1109/RADECS.1997.698876","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698876","url":null,"abstract":"A total dose response of pnp Lateral Lambda Bipolar Transistor (L/sup 2/BT) is presented. The fabricated L/sup 2/BT structure is obtained by merging PMOS transistor and PNP lateral bipolar transistor in one device. With 35 nm thin oxide above active channel and base areas, L/sup 2/BT appears as convenient device for simultaneous analysis of radiation induced effects on bipolar and MOS type transistor operation. It was found that near-midgap interface surface recombination velocity affects bipolar operation at much lower total dose before substantial generation of positive trapped oxide charge develops to affect MOS operation. The relative weak sensitivity of L/sup 2/BT current gain on total accumulation dose is identified and explained. Based on this result, a new radiation hardening approach of lateral bipolar transistors is proposed with internal current loop sensing method.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"563 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132704080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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