SEB occurrence in a VIP: influence of the epi-substrate junction

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.699000

E. Lorfèvre, C. Sudre, C. Dachs, C. Detcheverry, J. Palau, J. Gasiot, M. Calvet, J. Garnier, R. Ecoffet

引用次数: 5

Abstract

Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.

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VIP中SEB的发生:外延-衬底结的影响

本文首次报道了重离子诱导的VIP不同部位的灼烧。2d模拟研究可以更好地理解这一现象，并显示了外延-衬底结参数在SEB发生中的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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