RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)最新文献_第10页

Proton SEU rate predictions 质子SEU速率预测

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.699006

P. Mcnulty, M. Savage, D. Roth, C. Foster

引用次数: 2

Improving the sensitivity of PMOS dosimeters using dual dielectrics 利用双介质提高PMOS剂量计的灵敏度

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698910

B. O'Connell, A. Enright, C. Conneely, W. Lane, L. Adams

{"title":"Improving the sensitivity of PMOS dosimeters using dual dielectrics","authors":"B. O'Connell, A. Enright, C. Conneely, W. Lane, L. Adams","doi":"10.1109/RADECS.1997.698910","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698910","url":null,"abstract":"Recent developments in PMOS dosimetry have concentrated on improving the radiation sensitivity of the RADFET device, with the ultimate aim of RADFET operation in the milli-rad range. This is essential for successful use in the clinical and personnel environments. This paper details the research in to improving radiation sensitivity of RADFET devices by examining a range of dual-gate dielectric RADFETs for a number of key dosimetric parameters. The existing 0.4 /spl mu/m and 1 /spl mu/m thermal gate oxides in the PMOS process at the NMRC have been optimised for RADFET use, and are used as the base of a number of dual dielectrics which use Chemical Vapour Deposition (CVD) oxides and nitrides as the extra layer. Over thirty different dielectric combinations were fabricated and extensive radiation testing has led to results on radiation sensitivity, read-time stability and long-term stability. The use of a 0.6 /spl mu/m layer of TEOS based CVD oxide on a 0.4 /spl mu/m thermal oxide shows an impressive sensitivity of 7.54 mV/rad (Irradiation bias Vir=+5 V, 5 krads) and also performs well in other important dosimetric areas such as the read-time drift and post-irradiation fading.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"102 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123165591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Neutron induced damage in linear integrated circuits: Ionizing effects contribution 线性集成电路中的中子诱导损伤:电离效应的贡献

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698898

B. Azais, D. Lopez, M. Vié

引用次数: 4

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698979

T. Calin, R. Velazco, M. Nicolaidis, S. Moss, S. Lalumondiere, V. Tran, R. Koga, K. Clark

引用次数: 19

In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons 4.5 MeV质子辐照下AlGaAs垂直腔面发射激光的真空响应

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698946

E. Taylor, A. Paxton, H. Schone, R. F. Carson, J. Bristow, J. Lehman, M. Hibbs-Brenner, R. Morgan, T. Marta

引用次数: 17

Updated measurements from CREAM and CREDO and implications for environment and shielding models CREAM和CREDO的最新测量结果以及对环境和屏蔽模型的影响

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698981

C. Dyer, P. Truscott, C. Peerless, C. Watson, H. Evans, P. Knight, M. Cosby, C. Underwood, T. Cousins, R. Noulty

引用次数: 13

Combination of device simulation with computational electromagnetics 器件仿真与计算电磁学的结合

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698886

Lars H. Bomholt, Peter Regli, Thomas, 0., Korner, Wolfgang Fichtner

引用次数: 6

Investigation and improvement of the radiation tolerance of a teleoperated manipulator-equipped vehicle to be used in radioactive environments 用于放射性环境的遥控机械手车辆的辐射容限研究与改进

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1900-01-01 DOI: 10.1109/RADECS.1997.698916

A. Boden, W. Kruger, T. Muller

{"title":"Investigation and improvement of the radiation tolerance of a teleoperated manipulator-equipped vehicle to be used in radioactive environments","authors":"A. Boden, W. Kruger, T. Muller","doi":"10.1109/RADECS.1997.698916","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698916","url":null,"abstract":"Investigations have been carried out in order to assess and to improve the radiation tolerance of a remote controlled, manipulator-equipped vehicle. Operating in radiative environments, these robots have to withstand total dose stresses up to several 10 kGy. The complexity of tasks these vehicles have to perform makes it necessary to supply them with extensive electronic systems on board. Thus, it has to be taken into account, that semiconductor electronic devices are highly sensitive to ionizing radiation. An approach to rise the radiation tolerance level of such a robot is described. It's electronic system has been analyzed and then the whole robot has been exposed to Co/sub 60/ radiation to identify the weakest radiation tolerance of it's different electronic components. This way failures within the onboard electronic systems could be determined, that would have remained unidentified if only isolated electronic subsystems would have been irradiated. Once the sensitive components were identified, measures have been taken to improve their radiation tolerance. To verify the radiation hardening, the modified systems were submitted to further radiation tests and modified again according to the test results. Within this iterative approach it is possible to raise the radiation tolerance level of the vehicle to 15 kGy in the case all power subsystems are modified as demonstrated during this investigation. Even in the case that only two types of power subsystems are modified to radiation hardness, the radiation tolerance of the vehicle can be raised to 2.7 kGy, which is about three times the initial value.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115391534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The single-event-effect behaviour of commercial-off-the-shelf memory devices. A decade in low-Earth orbit 商用现成存储器的单事件效应行为。在近地轨道上待了十年

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1900-01-01 DOI: 10.1109/RADECS.1997.698902

C. Underwood

引用次数: 6

A methodology study lateral parasitic transistors in CMOS technologies CMOS技术中横向寄生晶体管的研究方法

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1900-01-01 DOI: 10.1109/RADECS.1997.698845

O. Flament, C. Chabrerie, V. Ferlet-Cavrois, J. Leray, F. Faccio, P. Jarron

引用次数: 0