Neutron induced damage in linear integrated circuits: Ionizing effects contribution

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698898

B. Azais, D. Lopez, M. Vié

引用次数: 4

Abstract

This work deals with the impact of ionizing dose induced damage in linear junction isolated integrated circuits (JIICs) when exposed to neutron irradiations. A very low contribution of ionizing effects is shown for standard neutron test conditions.

查看原文本刊更多论文

线性集成电路中的中子诱导损伤:电离效应的贡献

本文研究了电离剂量对中子辐照下线性结隔离集成电路(JIICs)损伤的影响。在标准中子试验条件下，电离效应的贡献很小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

自引率

0.00%

发文量