Proton SEU rate predictions

P. Mcnulty, M. Savage, D. Roth, C. Foster
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引用次数: 2

Abstract

Charge collection measurements show that proton-induced elastic interactions can dominate the production of SEUs in certain COTS parts when the value of the critical charge is sufficiently low. In the bulk device used in these measurements, the elastic recoils do not introduce any angular dependence nor are they energetic enough to upset the device. The spallation reactions should not introduce an angular dependence either because of the shape of the sensitive volume. However, an increase in charge-collection events is observed at very large angles of incidence, beginning at 78/spl deg/. This increase appears to be caused by secondary particles generated in the side walls of the chip's packaging, and this contribution would be significant for SEU production in devices with low values of the critical charge but not for those with large values.
质子SEU速率预测
电荷收集测量表明,当临界电荷足够低时,质子诱导的弹性相互作用可以在某些COTS部件中主导seu的产生。在这些测量中使用的散装装置中,弹性反冲不引入任何角度依赖,也没有足够的能量来破坏装置。由于敏感体积的形状,散裂反应也不应引入角依赖。然而,在非常大的入射角处,从78/spl°/开始,观察到电荷收集事件的增加。这种增加似乎是由芯片封装侧壁中产生的二次颗粒引起的,这种贡献对于临界电荷值较低的设备中的SEU生产是显著的,而对于那些具有大值的设备则不是。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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