4.5 MeV质子辐照下AlGaAs垂直腔面发射激光的真空响应

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698946

E. Taylor, A. Paxton, H. Schone, R. F. Carson, J. Bristow, J. Lehman, M. Hibbs-Brenner, R. Morgan, T. Marta

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引用次数: 17

摘要

垂直腔面发射激光器(VCSELs)具有很高的空间应用潜力，但其在真空条件下对辐射的敏感性知之甚少。本文报道了在真空850 nm下，用扫描离子微束照射4.5 MeV质子的市售质子注入量子阱AlGaAs VCSEL的首次观测结果。讨论了质子剂量为1.19 MGy时L-I-V反应的退化，特别注意非辐射载流子复合增加引起的加热和真空环境引起的加热。

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In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons

Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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