RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)最新文献_第3页

Comparison of MIL-STD-1773 fiber optic data bus terminals: Single event proton test irradiation, in-flight space performance, and prediction techniques MIL-STD-1773光纤数据总线终端的比较:单事件质子试验辐照、飞行空间性能和预测技术

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698920

K. Label, P. Marshall, C. Marshall, J. Barth, H. Leidecker, R. Reed, C. Seidleck

引用次数: 11

Hot carrier relaxation in quantum well structures using Monte Carlo simulation 用蒙特卡罗模拟量子阱结构中的热载流子弛豫

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698853

E. Cassan, S. Galdin, P. Dollfus, O. Musseau, P. Hesto

引用次数: 1

Test method for IC electrical overstress hardness estimation 集成电路电超应力硬度估计的试验方法

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698882

P.K. Skorobogatov

引用次数: 8

High-energy particle irradiation effects in 0.5 /spl mu/m BiCMOS polysilicon emitter bipolar junction transistors 高能粒子辐照在0.5 /spl mu/m BiCMOS多晶硅发射极双极晶体管中的效应

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698860

E. Simoen, S. Decoutere, B. Merron, L. Deferm, C. Claeys, G. Berger, G. Ryckewaert, H. Ohyama, H. Sunaga

引用次数: 0

Radiation source dependence of degradation and recovery of irradiated In/sub 0.53/Ga/sub 0.47/As PIN photodiodes 辐照In/sub 0.53/Ga/sub 0.47/As PIN光电二极管降解和恢复的辐射源依赖性

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698863

H. Ohyama, E. Simoen, C. Claeys, Y. Takami, T. Kudou, H. Sunaga

{"title":"Radiation source dependence of degradation and recovery of irradiated In/sub 0.53/Ga/sub 0.47/As PIN photodiodes","authors":"H. Ohyama, E. Simoen, C. Claeys, Y. Takami, T. Kudou, H. Sunaga","doi":"10.1109/RADECS.1997.698863","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698863","url":null,"abstract":"Irradiation damage and its recovery behavior resulting from thermal annealing in In/sub 0.53/Ga/sub 0.47/As PIN photodiodes, subjected to a 20-MeV alpha ray, are studied. The degradation of the electrical and optical performance of diodes increases with increasing fluence. In the In/sub 0.53/Ga/sub 0.47/As epitaxial layers, hole and electron capture levels are induced by irradiation. The influence of the radiation source on the degradation and recovery is then discussed by comparison to 1-MeV electrons and 1-MeV fast neutrons with respect to the numbers of knock-on atoms and the nonionizing energy loss (NIEL). Isochronal thermal annealing for temperatures ranging from 75 to 300/spl deg/C shows that the device performance degraded by the irradiation recovers by thermal annealing, and that the recovery behavior has a radiation source dependence. The recovery increases with increasing annealing temperature. The amount of recovery for alpha rays is nearly the same as for neutron irradiation, while that for electron irradiation is much larger. The radiation source dependence of performance degradation is attributed to the difference of mass and the probability of nuclear collision for the formation of lattice defects.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121246077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Simulation of the ionizing radiation effects induced on an ideal NPN vertical BIMOS transistor 理想NPN垂直BIMOS晶体管电离辐射效应的模拟

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698875

P. Galy, V. Berland

引用次数: 1

Insulator photocurrents: application to dose rate hardening of CMOS/SOI integrated circuits 绝缘体光电流:在CMOS/SOI集成电路剂量率硬化中的应用

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698869

E. Dupont-Nivet, Y. Coic, O. Flament, F. Tinel

引用次数: 1

Proton transport through graphite composite honeycomb solar array panel 质子通过石墨复合蜂窝太阳能电池板的传输

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698914

M. Stanton, J. Barth, E. Stassinopoulos, W. Stapor, T. Jordan

引用次数: 1

The junction ideality factor for ageing characterization 老化表征的结理想因子

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698887

M. de la Bardonnie, S. Dib, P. Mialhe, J. Charles

引用次数: 1

Latent interface-trap generation in commercial power VDMOSFETs 商用功率vdmosfet中潜在接口陷阱的产生

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI: 10.1109/RADECS.1997.698837

A. Jaksic, M. Pejovic, G. Ristić, S. Rakovic

{"title":"Latent interface-trap generation in commercial power VDMOSFETs","authors":"A. Jaksic, M. Pejovic, G. Ristić, S. Rakovic","doi":"10.1109/RADECS.1997.698837","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698837","url":null,"abstract":"Latent interface-trap generation is one of the most controversial post-irradiation effects in MOSFETs, which can have a significant impact on device performance and reliability in radiation environments. In this paper, we present new experimental evidence of latent interface-trap buildup in commercial power VDMOSFETs: its dependencies on dose, temperature and gate bias applied during irradiation and annealing. We discuss several models for latent interface-trap buildup and show that the most consistent is one which involves the diffusion of molecular hydrogen from structures adjacent to the gate oxide (CVD oxide, poly-Si gate), and its cracking on positive charge centers in the oxide. The cracking reaction liberates hydrogen ions, which drift to the Si/SiO/sub 2/ interface to form interface traps. Some hypothesis from the recently proposed H-W model for post-irradiation behavior of interface traps may help resolve the question of the source of hydrogen sufficient to cause up to 800% increase in interface-trap density, experimentally observed. The implications of latent interface-trap generation for hardness assurance test methods are also discussed.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"68 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115933761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 22