老化表征的结理想因子

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698887

M. de la Bardonnie, S. Dib, P. Mialhe, J. Charles

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引用次数: 1

摘要

提出了一种研究亚微米n-MOS晶体管热载流子降解的新方法。在电约束后，观察到衬底-漏极结的电流-电压特性发生了变化。提取结参数，并使用老化步骤后的变化来表征器件的退化。注入载流子的降解过程与栅漏重叠区域的绝缘氧化物边缘缺陷有关。结理想系数作为一个敏感参数出现，可用来表征老化效应和量化退化的幅度。

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The junction ideality factor for ageing characterization

A new method to investigate hot carrier degradation in submicrometer n-MOS transistors is presented. An alteration of the current-voltage characteristics of the substrate-drain junction has been observed after electrical constraints. Junction parameters are extracted and their variations after ageing steps are used to characterize the degradation of the device. Degradation processes by injected carriers are related to the insulating oxide edge defects in the gate to drain overlap region. The junction ideality factor appears as a sensitive parameter usable to characterize ageing effects and to quantify the magnitude of the degradations.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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