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Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)最新文献

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A new fab concept in the 300 mm wafer era 300mm晶圆时代的全新晶圆厂概念
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993613
A. Koike
{"title":"A new fab concept in the 300 mm wafer era","authors":"A. Koike","doi":"10.1109/ISSM.2000.993613","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993613","url":null,"abstract":"Trecenti Technologies, Inc. is currently creating the first 300 mm-wafer volume production fab. Our basic objectives are to minimize cycle time with all single-wafer processes and to create a scalable fab that has an optimized expansion unit to satisfy high investment efficiency and flexibility to changing market needs.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132163687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fujitsu's Internet business strategy: everything on the Internet 富士通的互联网经营战略:一切在互联网上
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993604
N. Akikusa, Y. Hirose
{"title":"Fujitsu's Internet business strategy: everything on the Internet","authors":"N. Akikusa, Y. Hirose","doi":"10.1109/ISSM.2000.993604","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993604","url":null,"abstract":"The Internet has changed society, enterprises and life style rapidly, and ushered in a new era of industrial revolution. We anticipated this trend and launched our new business strategy - \"Everything on the Internet\". This declaration means that Fujitsu focuses Internet from own business fields to management practice. We have three specific areas in which we wish to become a leader: 1) to be a provider of the Internet solution that merges platforms, information, electronic devices and services; 2) to establish and develop @nifty, Japan's largest Internet service provider - a user-friendly Internet environment to subscribers; and 3) to be the Internet user that implements management revolution by fully using our resources that the Internet can offers. Fujitsu group has leading edge technology and many proven solutions. In achieving this third target, we would like to play an active part as an IT company that focuses business, realizes speedy management, and has the competitive advantage combined with high growth and profitability.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"511 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123071478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simultaneous cycle-time reduction and output enhancement in a fully loaded foundry wafer fab 在满负荷的晶圆厂中同时缩短周期和提高产量
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993617
C. M. Ho, T. Chen, P. Hseih, C. Chu, E. Houn, K. J. Su, P. Wang, W. C. Yew, S.W. Sun
{"title":"Simultaneous cycle-time reduction and output enhancement in a fully loaded foundry wafer fab","authors":"C. M. Ho, T. Chen, P. Hseih, C. Chu, E. Houn, K. J. Su, P. Wang, W. C. Yew, S.W. Sun","doi":"10.1109/ISSM.2000.993617","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993617","url":null,"abstract":"A case study is reported in how cycle-time reduction and output enhancement were accomplished simultaneously in a fully loaded foundry wafer fab. Within one-year period of time, a 50 K per month capacity 6\" foundry fab improved its overall cycle-time by 35% with a concurrent fab wafer-output increase of over 20%. In the mean time, the fab WIP level was reduced by more than 20% without any compromise in line-yield or customer delivery.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122229007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis and implications of residual metal on spacer material in the self-align silicide process for VSLI manufacturing VSLI制造自对准硅化工艺中垫片材料残留金属分析及意义
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993632
P.L. Smith, T. Hossain, A. Ghatak-Roy, Jin Zhao
{"title":"Analysis and implications of residual metal on spacer material in the self-align silicide process for VSLI manufacturing","authors":"P.L. Smith, T. Hossain, A. Ghatak-Roy, Jin Zhao","doi":"10.1109/ISSM.2000.993632","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993632","url":null,"abstract":"We have investigated the effect of rapid thermal annealing (RTA), titanium capping, substrate Ar plasma pre-cleaning and post second RTA stripping on the amount of metal residual on silicon nitride and silicon oxide films during the cobalt (Co) self-aligned silicidation process. If our standard silicide process was used, low levels (Detection limit E10 cm/sup -2/) of Co were retained regardless of substrate and process conditions. Increasing RTA temperature of Co films that have not been capped with titanium (Ti) had relatively high uniform concentration levels throughout the annealing range. If the Co films are Ti capped the Co decreased in concentration with an increasing annealing temperature. The Ti retention however started several orders of magnitude higher than that of Co and increased slightly with increasing temperature. Pre-cleaning with Ar/sup +/ plasma and with aggressive strip led to lower retention of Co and Ti. Undoped silicon oxide was very temperature sensitive and retains more Co than Si/sub 3/N/sub 4/ or thermal SiO/sub 2/ films. Thermal oxide films behave similar to silicon nitride. Chemical bonding data suggest that cobalt combines with silicon, near the surface (>20A). Titanium capping, annealing temperature, free silicon in substrates, chemical strip and film surface conditions are the determining factors for the level of retention. Residual Co and Ti can be nearly eliminated if an additional post RTA wet strip (aggressive) is used, but it must be metered with knowledge that it will be done at the expense of Co silicide removal from poly gate and active regions.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125724884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High controllability and low cost APM process by one-bath type wet-bench for multi gate oxide pre-cleaning 采用一浴式湿工作台进行多栅氧化物预清洗的APM工艺，具有高可控性和低成本
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993678
T. Suzuki, H. Kunishima, T. Wake, S. Chikaki
{"title":"High controllability and low cost APM process by one-bath type wet-bench for multi gate oxide pre-cleaning","authors":"T. Suzuki, H. Kunishima, T. Wake, S. Chikaki","doi":"10.1109/ISSM.2000.993678","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993678","url":null,"abstract":"We propose a sufficiently effective APM process by one-bath type wet-bench to the multi oxide gate precleaning from the viewpoint of the high controllable thermal oxide etching rate and the high performance pre-cleaning for ultra-thin gate oxide. In the one-bath type wet-bench, cleaning solution is freshly changed per batch. Therefore, we estimated the ability of the cost reduction of the APM process. As the result, it was clarified that the composition of 0.1:0.1:5 (NH/sub 4/OH:H/sub 2/O/sub 2/:H/sub 2/O) in the one-bath type wet-bench is almost equivalent cost level to the conventional multi-bath type wet-bench and can realize the high controllability and performance for the pre-cleaning of multi gate oxide.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127579784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
How do material and information flows impact fab performance? 材料和信息流如何影响晶圆厂的性能?
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993656
D. Scott
{"title":"How do material and information flows impact fab performance?","authors":"D. Scott","doi":"10.1109/ISSM.2000.993656","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993656","url":null,"abstract":"Historically, a lot of attention has been given to improving the physics, the chemistry and the process technologies used in semiconductor manufacturing. This focus has produced dramatic results. Since its inception, the semiconductor industry has achieved productivity improvements unmatched by any other industry. Shrinking feature sizes, larger wafers, yield improvements and other productivity gains have contributed to this success. However, most of the known technological capabilities will be approaching or have reached their limits within 10-15 years. Already, larger wafers and improved yields are making a smaller contribution to productivity improvements than they have in the past, creating a widening gap in the productivity curve. This paper discusses how automated material and information flow can help close this gap in the productivity curve, and results that have been achieved.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133979514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microeconomics of metrology, yield, and profitability in 300 mm manufacturing 计量的微观经济学，产量，和盈利能力在300毫米制造
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993615
K. Monahan, A. Chatterjee, G. Falessi
{"title":"Microeconomics of metrology, yield, and profitability in 300 mm manufacturing","authors":"K. Monahan, A. Chatterjee, G. Falessi","doi":"10.1109/ISSM.2000.993615","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993615","url":null,"abstract":"Simple microeconomic models that directly link metrology, yield, and profitability are rare or non-existent. In this work, we introduce and validate such a model. Using a small number of input parameters, we explain current yield management practices in 200 mm factories. The model is then used to extrapolate requirements for 300 mm factories, including the impact of simultaneous technology transitions to 130 nm design rules, copper interconnect, and integrated metrology. We show that the dramatic increase in value per wafer at the 300 mm transition becomes a driver for increasing metrology capability, despite a concomitant increase in cost. As expected, the model results are strongly dependent on product type (memory, chipset, or microprocessor) and process maturity.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134641389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
International reuse program in a green field Fab 国际再利用计划在绿色领域Fab
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993653
A. Grinshpan, G. Lavi
{"title":"International reuse program in a green field Fab","authors":"A. Grinshpan, G. Lavi","doi":"10.1109/ISSM.2000.993653","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993653","url":null,"abstract":"As the semiconductor industry becomes increasingly competitive in product pricing, a key factor that will determine if Intel can maintain its dominance in the industry is the cost of green field Fabs. The largest item on the cost Pareto is capital depreciation and the most significant item in reducing it is an efficient reuse program. Until now all tool reuse was done in one site, using older tools. The breakthrough of the Intel Fab 18 tool reuse program is that 100% of the reused tools have been delivered from other sites overseas. Some of the difficulties of being an International green field Fab were different power supply amplitude/frequency, conversion in a remote site, demolition, crating, shipping, etc. The program included over 50 tool types and 181 process tools. It was all managed using a Web based tracking tool. The Web based tool enabled each machine owner to modify and track the status of the tool for each critical project milestone online. The Fab 18 program was very successful, giving cost saving to Intel while controlling risk.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114295953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Key trends in the semiconductor industry 半导体行业的主要趋势
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993711
J. Dickson
{"title":"Key trends in the semiconductor industry","authors":"J. Dickson","doi":"10.1109/ISSM.2000.993711","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993711","url":null,"abstract":"","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"49 15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115877334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving semiconductor manufacturing yields by using Raman spectroscopic analysis 利用拉曼光谱分析提高半导体制造产量
Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130) Pub Date : 2000-09-26 DOI: 10.1109/ISSM.2000.993666
T. Obara, J. Tanakadate, T. Chabata, K. Ishihara, F. Mieno, F. Yanagihara
{"title":"Improving semiconductor manufacturing yields by using Raman spectroscopic analysis","authors":"T. Obara, J. Tanakadate, T. Chabata, K. Ishihara, F. Mieno, F. Yanagihara","doi":"10.1109/ISSM.2000.993666","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993666","url":null,"abstract":"In order to implement effective countermeasures to improve yields, it is essential to analyze particles, clarify their material and determine their source in a short period of time. However, it took time to determine the source of particles using conventional particle analysis methods such as EDX and FT-IR, due to shortcomings arising from their measurement principles. Raman spectroscopic analysis is a method for analyzing particles which compensates for the insufficiencies of conventional analysis methods, so there is possibility that it will enable the determination of particle sources in a shorter period of time. We selected four types of 64 M D-RAM production equipment where particles originating from that manufacturing equipment were considered to be reducing yields.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123075655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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