利用拉曼光谱分析提高半导体制造产量

T. Obara, J. Tanakadate, T. Chabata, K. Ishihara, F. Mieno, F. Yanagihara
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引用次数: 0

摘要

为了实施有效的对策以提高产量,必须在短时间内分析颗粒,澄清其材料并确定其来源。然而,使用传统的粒子分析方法,如EDX和FT-IR,由于测量原理的缺点,需要花费时间来确定颗粒的来源。拉曼光谱分析是一种粒子分析方法,弥补了传统分析方法的不足,因此有可能在更短的时间内确定粒子源。我们选择了四种类型的64 M D-RAM生产设备,其中来自该制造设备的颗粒被认为会降低产量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving semiconductor manufacturing yields by using Raman spectroscopic analysis
In order to implement effective countermeasures to improve yields, it is essential to analyze particles, clarify their material and determine their source in a short period of time. However, it took time to determine the source of particles using conventional particle analysis methods such as EDX and FT-IR, due to shortcomings arising from their measurement principles. Raman spectroscopic analysis is a method for analyzing particles which compensates for the insufficiencies of conventional analysis methods, so there is possibility that it will enable the determination of particle sources in a shorter period of time. We selected four types of 64 M D-RAM production equipment where particles originating from that manufacturing equipment were considered to be reducing yields.
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