{"title":"采用一浴式湿工作台进行多栅氧化物预清洗的APM工艺,具有高可控性和低成本","authors":"T. Suzuki, H. Kunishima, T. Wake, S. Chikaki","doi":"10.1109/ISSM.2000.993678","DOIUrl":null,"url":null,"abstract":"We propose a sufficiently effective APM process by one-bath type wet-bench to the multi oxide gate precleaning from the viewpoint of the high controllable thermal oxide etching rate and the high performance pre-cleaning for ultra-thin gate oxide. In the one-bath type wet-bench, cleaning solution is freshly changed per batch. Therefore, we estimated the ability of the cost reduction of the APM process. As the result, it was clarified that the composition of 0.1:0.1:5 (NH/sub 4/OH:H/sub 2/O/sub 2/:H/sub 2/O) in the one-bath type wet-bench is almost equivalent cost level to the conventional multi-bath type wet-bench and can realize the high controllability and performance for the pre-cleaning of multi gate oxide.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"342 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High controllability and low cost APM process by one-bath type wet-bench for multi gate oxide pre-cleaning\",\"authors\":\"T. Suzuki, H. Kunishima, T. Wake, S. Chikaki\",\"doi\":\"10.1109/ISSM.2000.993678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a sufficiently effective APM process by one-bath type wet-bench to the multi oxide gate precleaning from the viewpoint of the high controllable thermal oxide etching rate and the high performance pre-cleaning for ultra-thin gate oxide. In the one-bath type wet-bench, cleaning solution is freshly changed per batch. Therefore, we estimated the ability of the cost reduction of the APM process. As the result, it was clarified that the composition of 0.1:0.1:5 (NH/sub 4/OH:H/sub 2/O/sub 2/:H/sub 2/O) in the one-bath type wet-bench is almost equivalent cost level to the conventional multi-bath type wet-bench and can realize the high controllability and performance for the pre-cleaning of multi gate oxide.\",\"PeriodicalId\":104122,\"journal\":{\"name\":\"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)\",\"volume\":\"342 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2000.993678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2000.993678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High controllability and low cost APM process by one-bath type wet-bench for multi gate oxide pre-cleaning
We propose a sufficiently effective APM process by one-bath type wet-bench to the multi oxide gate precleaning from the viewpoint of the high controllable thermal oxide etching rate and the high performance pre-cleaning for ultra-thin gate oxide. In the one-bath type wet-bench, cleaning solution is freshly changed per batch. Therefore, we estimated the ability of the cost reduction of the APM process. As the result, it was clarified that the composition of 0.1:0.1:5 (NH/sub 4/OH:H/sub 2/O/sub 2/:H/sub 2/O) in the one-bath type wet-bench is almost equivalent cost level to the conventional multi-bath type wet-bench and can realize the high controllability and performance for the pre-cleaning of multi gate oxide.