40th Conference Proceedings on Electronic Components and Technology最新文献

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Assessment of aqueous cleaning of PWAs with wave and reflow soldered components 波峰焊和回流焊pwa的水清洗评价
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122195
G. Castelli, G. Specchiulli
{"title":"Assessment of aqueous cleaning of PWAs with wave and reflow soldered components","authors":"G. Castelli, G. Specchiulli","doi":"10.1109/ECTC.1990.122195","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122195","url":null,"abstract":"The authors report results obtained using production machines in a test program that started in the first quarter of 1989. Chemical and physical evaluation of different kinds of commercial water-soluble solder creams and fluxes was first performed. Three products were selected and subjected to test in order to qualify their application in the professional field for wave soldering and reflow processes, and they were compared to the standard CFC (chlorofluorocarbon) cleaning procedure. Ionic contamination and THB (temperature-humidity-bias) tests were performed on ad hoc designed PWAs (printed wiring assemblies). It was found that acceptable cleanliness is obtained with water-soluble products provided that the washing machine has suitable spray pressure, nozzle angles, and drying section. Reliability tests on components are in progress to evaluate the possible detrimental effects of residual contaminants when moisture is present. Preliminary results of this step are given.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"54 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129440053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Mechanical characteristics of 96.5 Sn/3.5 Ag solder in micro-bonding 96.5 Sn/3.5 Ag焊料微键合力学特性
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122236
M. Harada, R. Satoh
{"title":"Mechanical characteristics of 96.5 Sn/3.5 Ag solder in micro-bonding","authors":"M. Harada, R. Satoh","doi":"10.1109/ECTC.1990.122236","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122236","url":null,"abstract":"The influence of gold on the tensile properties and microstructure of 96.5 Sn/3.5 Ag solder and the thermal fatigue life of a 96.5 Sn/3.5 Ag-solder joint applied to a controlled-collapse chip joint was investigated and compared with the conventional solder, 63 Sn/37 Pb. A 96.5 Sn/3.5 Ag solder with several mass% of gold added is examined in terms of tensile properties and microstructure. Although 63 Sn/37 Pb with more than 3 mass% of gold has a poor ultimate elongation, 96.5 Sn/3.5 Ag extends well. Regarding the microstructure, intermetallic compounds alloyed by 96.5 Sn/3.5 Ag and gold are smaller than those of 63 Sn/37 Pb and gold. The influence of the thermal fatigue of microbonding is discussed. After the temperature cycling test, striations formed by the thermal fatigue are observed on the fractured surface. Their intervals are as fine as 0.04-0.2 mu m. The crack-propagation rate of the solder joint is calculated according to the alternating intervals of the striations. In this way, the life of each solder joint is estimated. The thermal fatigue life of 96.5 Sn/3.5 Ag solder is found to be about twice that of 63 Sn/37 Pb. The life estimated according to the striations is related to the strain calculated by the finite-element method (FEM) to obtain an experimental equation estimating the life of the controlled-collapse chip joint of 96.5 Sn/3.5 Ag. The 96.5 Sn/3.5 Ag solder is proven to have excellent characteristics for microbonding.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"13 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114034523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 64
Mullite ceramic substrate for thin-film application 薄膜用莫来石陶瓷衬底
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122170
T. Kurihara, M. Horiuchi, Y. Takéuchi, Shigemi Wakabayashi
{"title":"Mullite ceramic substrate for thin-film application","authors":"T. Kurihara, M. Horiuchi, Y. Takéuchi, Shigemi Wakabayashi","doi":"10.1109/ECTC.1990.122170","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122170","url":null,"abstract":"The advantages of mullite ceramic for thin-film application are examined. Using homogeneous powder, a dense mullite substrate consisting of fine mullite grains was provided without the addition of a sintering aid. The properties obtained are superior to those of the mullite presented by M. Horiuchi et al. (1988) and a conventional alumina for application to packages and substrates: low dielectric constant","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115001574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High-density, high speed, board-to-board stripline connector 高密度,高速,板对板带状线连接器
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122289
M.M. Sucheski, D. Glover
{"title":"High-density, high speed, board-to-board stripline connector","authors":"M.M. Sucheski, D. Glover","doi":"10.1109/ECTC.1990.122289","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122289","url":null,"abstract":"The AMP Mini-TBC stripline connector is described. This connector embodies a concept which approaches homogeneity across the connection of two printed circuit cards. Stripline characteristics of the board are maintained through the connector and make the connector virtually transparent to the circuit. As a result of contact miniaturization, spacing is maintained at 0.100-in centerlines, and the application of the product requires little change on the part of printed circuit board designers and fabricators. The electrical commoning of alternate columns of contacts provides economical application in environments where shielding is of paramount importance. In situations requiring district power distribution and a low-inductance path to ground, sufficient bulk is provided to conduct 1.5 A continuously (28 A per 20-column module, per power blade). Mechanical staging of ground, power, and signal contacts is generously set at 0.062-in nominal with 0.100 in of nominal wipe on the signal pin. This stripline connector offers the systems designer a cost-effective solution for applications requiring stripline performance at sub-nanosecond edge speed.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128325662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Compatibility testing procedures and results for plastics and elastomers used with alternative cleaning agents 塑料和弹性体与替代清洗剂的相容性试验程序和结果
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122198
J. Yellow
{"title":"Compatibility testing procedures and results for plastics and elastomers used with alternative cleaning agents","authors":"J. Yellow","doi":"10.1109/ECTC.1990.122198","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122198","url":null,"abstract":"Low-ozone-depleting cleaning agents are being developed to replace chlorofluorocarbon (CFC)-based solvents for electronics cleaning. In general, the alternative cleaning agents are chemically more aggressive than the conventional CFC-113 blends. Manufacturers of electronic components should therefore be concerned about the compatibility of the polymeric construction materials they choose to use in their parts. The author presents the compatibility testing procedures used by a cleaning-agent supplier to screen alternative candidates, and the effects of different types of alternative cleaning agents on various classes of plastics and elastomers. It is noted that the alternative cleaning agents are less forgiving toward various plastics and elastomers, especially the optical plastics (polycarbonate and acrylic) and the traditional sealing elastomers (Buna N, polychloroprene, and Viton A). Compatibility testing is easy to perform, and component manufacturers are encouraged to carry out similar tests to evaluate the potential impact of alternative cleaning agents on their particular products.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133689582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
ESD packaging requirements for an opto-electronic receiver module 光电接收模块的防静电封装要求
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122165
E. M. Foster, R. J. Wolff
{"title":"ESD packaging requirements for an opto-electronic receiver module","authors":"E. M. Foster, R. J. Wolff","doi":"10.1109/ECTC.1990.122165","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122165","url":null,"abstract":"Sensitive circuits contained in an optoelectronic receiver module must meet worldwide standards for electrostatic discharge (ESD). Enclosing these circuits in a package becomes an extremely important consideration in achieving acceptable module performance. The authors describe the packaging requirements for an optoelectronic module that will meet the objective. Experimental tests were conducted on various packaging designs to determine the significant features affecting ESD susceptibility. Areas investigated included metallurgical vs. metal-filled epoxy assembly of the package elements (housing, lid, substrate), and low resistance vs. full closure between the packaging elements. The packaging features required to achieve acceptable ESD voltage levels were determined and implemented in the design.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"278 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132808064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Acetylene-terminated polyimide oligomers as the interlayer dielectric for multilevel interconnects, some basic electrical characterizations 端接乙炔的聚酰亚胺低聚物作为多层互连的层间介质,一些基本的电学特性
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122270
C. Puglisi, J. McMahon, A. Winster, R. Rossi, J. Conners, L. Fuller, K. Hesler, S. Tourville
{"title":"Acetylene-terminated polyimide oligomers as the interlayer dielectric for multilevel interconnects, some basic electrical characterizations","authors":"C. Puglisi, J. McMahon, A. Winster, R. Rossi, J. Conners, L. Fuller, K. Hesler, S. Tourville","doi":"10.1109/ECTC.1990.122270","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122270","url":null,"abstract":"The dielectric constant (E/sub rPI/) and bulk resistivity ( rho ) of three different Thermid polyimide thin-film dielectrics were measured. This was accomplished by actually fabricating a microelectronic capacitor device which utilizes the Thermid polyimide film as the dielectric. The dielectric constant for films from all formulations studied was around 2.8 at a 1-MHz frequency with an average bulk resistivity of 10/sup 8/ Omega -cm. It was found that high heat and moisture exposure and cure schedule (time and temperature) had little effect on these values. The only trend noticeable was related to cure atmosphere, with slightly higher values obtained for the dielectric constant of films processed in nitrogen rather than in air. The results of capacitance-voltage (C-V) studies for these thin dielectric films are also presented. The resulting shift in flatband voltage of a biased sample vs. a control leads to the calculation of total mobile cation concentration expressed as (Na) in ppm. Results indicate that the polyimide thin films contain between 3 and 13 ppm total (Na).<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133073695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental measurements of surface mount component lead stiffness 表面贴装元件引线刚度的实验测量
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122301
D. E. Pope, K. Byrd
{"title":"Experimental measurements of surface mount component lead stiffness","authors":"D. E. Pope, K. Byrd","doi":"10.1109/ECTC.1990.122301","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122301","url":null,"abstract":"An approach to the experimental determination of lead stiffness (the straddle board method) has been used to assess surface-mount package leads of actual service dimensions. Correlation was observed between the experimental data and trends of predicted values from the linear elastic beam model. However, the simplified model cannot be used to predict actual performance. Current 3D finite-element analysis shows good correlation and predictive capability. Lead stiffness values of PLCC (plastic leaded chip carrier), cerquad (ceramic quad flat pack), and PQFP (plastic quad flat pack) packages have been measured. Transverse values exceed lateral for PLCC and cerquad packages. Cerquad packages exhibit lower stiffness than PLCC. This behavior can be attributed to the longer shoulder length of the cerquad lead and thinner lead thickness, which offsets the effect of the elastic modulus. PQFP leads are in order of magnitude more compliant than the 50-mil pitch J-lead configuration due to the smaller lead cross section and the gull-wing configuration. The board-level solder-joint reliability of PQFP packages is expected to exceed that of the established PLCC component because of the increased lead compliancy.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133555917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microstructural evolution during thermomechanical fatigue of 62 Sn-36 Pb-2 Ag and 60 Sn-40 Pb solder joints 62个sn - 36pb - 2ag和60个sn - 40pb焊点热疲劳过程中的组织演变
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122237
D. Frear
{"title":"Microstructural evolution during thermomechanical fatigue of 62 Sn-36 Pb-2 Ag and 60 Sn-40 Pb solder joints","authors":"D. Frear","doi":"10.1109/ECTC.1990.122237","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122237","url":null,"abstract":"Thermomechanical fatigue tests were performed on two near-eutectic Sn-Pb solder alloys, 60 Sn-40 Pb and 62 Sn-36 Pb-2 Ag, to examine the effect silver additions have on solder joints. The cyclic load was found to have consistent trends between the two silver alloys (for given amounts of total strain and strain rates). It was found that a decreasing strain rate increased the life of both alloys equally in thermomechanical fatigue. At slower strain rates, the dislocation substructure recovers faster than it work-hardens, which tends to minimize subsequent recrystallization and heterogeneous coarsening of the solder joint. The microstructure of 62 Sn-36 Pb-2 Ag contained large whisker-like Ag/sub 3/Sn precipitates that nucleate and grow out from the Cu/sub 6/Sn/sub 5/ interfacial intermetallics. At this size, the Ag/sub 3/Sn precipitates have little effect on the deformation behavior of the solder. The intermetallics are not detrimental in that they do not prematurely crack, nor are they beneficial because they are too large to stabilize the microstructure. It does not appear, from a microstructural viewpoint, that adding silver to near-eutectic Sn-Pb has any significant effect on improving the thermomechanical fatigue behavior.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126999921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Passive-silicon-carrier design and characteristics 无源硅载流子的设计与特性
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122243
H. Schettler
{"title":"Passive-silicon-carrier design and characteristics","authors":"H. Schettler","doi":"10.1109/ECTC.1990.122243","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122243","url":null,"abstract":"A silicon-on-silicon package for nine VLSI chips is presented. The carrier is especially designed to support the high-frequency current surges of complementary logic like CMOS or BiCMOS. It contains integrated decoupling capacitors and uses three layers of metal. The chips are mounted by controlled-collapse chip connection. A /370 processor containing nine CMOS chips has been assembled. Functionality and manufacturability have successfully been demonstrated.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116648340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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