40th Conference Proceedings on Electronic Components and Technology最新文献

Fabricatiofn and characterization or iridium silicide/silicon Schottky barrier 硅化铱/硅肖特基势垒的制备与表征

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122262

J. Hao, X.R. Zhao, S.C. Qiou, X. Yi

引用次数: 0

Prototype packages in aluminium nitride for high performance electronic systems 用于高性能电子系统的氮化铝原型封装

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122175

K. Lodge, J. A. Sparrow, E.D. Perry, E. A. Logan, M. Goosey, D. Pedder, C. Montgomery

引用次数: 13

A comparison of copper and gold wire bonding on integrated circuit devices 集成电路器件上铜线和金线键合的比较

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122277

L. Khoury, David J. Burkhard, D. Galloway, T. Scharr

{"title":"A comparison of copper and gold wire bonding on integrated circuit devices","authors":"L. Khoury, David J. Burkhard, D. Galloway, T. Scharr","doi":"10.1109/ECTC.1990.122277","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122277","url":null,"abstract":"A comparative approach was used to develop new copper wire bond technology using the current standard production gold wire process as a baseline. Characterizations were made in the areas of assembly processes and material selection, electrical and thermal performance, intermetallic formation on Al and Al alloy bond pads, and reliability testing. It was demonstrated that copper wire bond strength tested with wire-pull and ball-shear methods can be maintained at higher levels than comparable gold wire bonds. Die shear strengths were degraded by temperature cycling, but not by high-temperature storage. AC/DC parameter characterizations across temperature and power supply exhibited identical performances on copper and gold devices. Input impedance, capacitance, and ESD (electrostatic discharge) showed no deviations between Au and Cu wire bonded devices selected for this investigation. The lower resistivity of Cu wire offers the potential for increased device power ratings. The thermal transient response showed negligible differences between Au and Cu wire bonded devices. The difference in intermetallic growth rates between Au and Cu wire processed devices suggest that Cu wire bonded devices will have greater reliability than Au wire bonded devices. The reliability data indicate that copper wire bonding is at least equal to conventional gold wire bonding. It is concluded that a copper ball bond assembly process can be developed for mass production which will equal and potentially surpass the performance and reliability of the present gold ball bond assembly process.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122226540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 106

Wire sweep during molding of integrated circuits 集成电路成型过程中的线材扫描

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122278

L. Nguyen, F. J. Lim

引用次数: 32

New military qualification testing procedures for cleaning agent alternatives to CFCs 氯氟烃清洁剂替代品的新军事资格测试程序

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122199

B. C. Smiley

引用次数: 2

Single-mode fiber packaging for semiconductor optical devices 半导体光学器件用单模光纤封装

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122188

L. Reith, J. Mann, N. Andreadakis, G. Lalk, C. Zah

{"title":"Single-mode fiber packaging for semiconductor optical devices","authors":"L. Reith, J. Mann, N. Andreadakis, G. Lalk, C. Zah","doi":"10.1109/ECTC.1990.122188","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122188","url":null,"abstract":"The authors describe an approach which increases package assembly alignment tolerances substantially while demonstrating coupling efficiencies as high as 40%. This has been accomplished by utilizing a spherical lens to couple from the device into single-mode fiber. The ball lens is mounted directly on the chip carrier for maximum thermal and mechanical stability and is aligned mechanically rather than actively. The single-mode fiber alignment is done actively, and the fiber is positioned so as to compensate for misalignments of the ball lens. Coupling to the single-mode fiber was done directly and by using a second lens affixed to the end of the fiber. In addition to relaxed alignment tolerances, this coupling scheme has other advantages. The working distance between the ball lens and single-mode fiber is typically approximately=2-4 mm. This allows for easy insertion of microoptical components such as optical isolators or filters into the package. The scheme also lends itself to a flexible, modular approach to packaging. The dual-lens coupling technique has been used to package optical amplifiers. A fiber-to-fiber gain as large as 10 dB has been demonstrated using this coupling technique.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129111874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 13

Local mismatches in SM solder joint FE analysis SM焊点有限元分析中的局部失配

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122304

M.J. Tervalon

{"title":"Local mismatches in SM solder joint FE analysis","authors":"M.J. Tervalon","doi":"10.1109/ECTC.1990.122304","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122304","url":null,"abstract":"The relative effects of material properties on the attachment reliability of 68 I/O (input/output) 50-mil pitch PLCC (plastic leaded chip carriers) were assessed using FEA (finite-element analysis). Initially, the intent was to rank the local lead/solder and solder/PWB (printed wiring board) CTE (coefficient of thermal expansion) mismatches against the global device/PWB CTE mismatch as the driving cause for crack initiation. The experimental design changed only the CTE and elastic modulus of the PLCC lead frames. Under conditions of pure thermal expansion and in the absence of additional induced mechanical forces, such as with board flexure, the localized interfacial CTE mismatches are shown to be the primary cause of plastic strains in surface-mount solder joints. The belief that lead compliancy is a valid parameter for insuring attachment reliability is addressed and confirmed, but the differential strains caused by loading conditions equivalent to reducing the lead spring constants by an order of magnitude yield only a factor of three increase in the maximum plastic strain values on FR-4 PWBs. In contrast, altering the interfacial CTE differences by changing from an FR-4 to a Kevlar substrate or from a copper to Kovar lead frame, induces order-of-magnitude differences in the solder-joint plastic strains.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129207769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Advanced decoupling using ceramic MLC capacitors 采用陶瓷MLC电容器的高级去耦

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122312

J.D. Prymak

引用次数: 12

Mechanism of electro-migration in ceramic package induced by chip-coating polyimide 芯片涂层聚酰亚胺致陶瓷封装电迁移机理研究

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122295

M. Kohara, Y. Mashiko, K. Nakazaki, M. Nunoshita

引用次数: 5

Development of copper wire bonding application technology 铜线粘接应用技术的发展

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122276

K. Toyozawa, K. Fujita, S. Minamide, T. Maeda

引用次数: 98