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硅化铱/硅肖特基势垒的制备与表征

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI:10.1109/ECTC.1990.122262
J. Hao, X.R. Zhao, S.C. Qiou, X. Yi
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引用次数: 0

摘要

结果表明，采用电子束蒸发和退火的方法，可以形成IrSi/Si肖特基势垒
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Fabricatiofn and characterization or iridium silicide/silicon Schottky barrier
It is demonstrated that an IrSi/Si Schottky barrier can be formed by electron beam evaporation and annealing of Ir films on
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来源期刊
40th Conference Proceedings on Electronic Components and Technology
40th Conference Proceedings on Electronic Components and Technology
CiteScore
3.10
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