{"title":"Local CTE mismatch in SM leaded packages: a potential reliability concern","authors":"J. Clech, F.M. Langerman, J.A. Augis","doi":"10.1109/ECTC.1990.122216","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122216","url":null,"abstract":"Thermal expansion mismatches across solder-joint interfaces, referred to as local mismatches, create thermomechanical strains and thus fatigue damage in solder joints of leaded devices. The authors report on an experiment and a modeling program that were conducted to investigate local mismatch effects in SM (surface mount) leaded packages. It was found that, when leads are compliant enough, plastic strains in solder are due mainly to local effects. The models and failure analysis show that the impact of local effects is larger with increasing CTE (coefficient of thermal expansion) mismatch at the lead/solder interface. This is more of a concern with Alloy 42 than with copper-alloy lead frames on FR-4 substrates. Simple mechanical models are also presented to derive acceleration factors for the assessment of global and local effects in the field.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"210 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126259871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Flip-chip solder bump fatigue life enhanced by polymer encapsulation","authors":"D. Suryanarayana, R. Hsiao, T. Gall, J. McCreary","doi":"10.1109/ECTC.1990.122212","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122212","url":null,"abstract":"Encapsulation of controlled collapse chip connection (C4) joints, using a filled epoxy resin having a matched coefficient of thermal expansion (CTE), has provided a substantial increase in the life of C4 joints in accelerated thermal cycle (ATC) fatigue testing on both low-CTE organic and ceramic chip carriers. The C4 joints are encapsulated by dispensing a bead of resin along an edge of the chip. The encapsulation flows underneath the chip by capillary action and completely fills the gap between the chip and the substrate. Optimization of the filler size distribution and resin rheology to get consistent flow under the chip without any bubbles is discussed. The filler size distribution and flow under the chip are shown to cross sections of several different materials including low-alpha-emitting encapsulants for memory applications. Novel encapsulant formulations were tested by videotaping the flow of encapsulant under transparent quartz chips. The formation of bubbles as the encapsulant flows around the C4 joints and irregularities in the surface of the substrate can clearly be seen. Proper C4 encapsulation provides virtually complete coverage around all C4 connections. C4 life testing over various temperature ranges show a 5 to 10 times improvement for both memory and logic footprints when the C4 joints are encapsulated. The vast improvement in C4-joint reliability provided by encapsulation allows the C4 technology to be extended to much larger chips or to higher service-temperature ranges without conventional DNP (distance from neural point) constraints.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126470608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Straddle-board modeling of SMT joint behaviors","authors":"T. Kilinski, D. Goetsch, B. Sandor","doi":"10.1109/ECTC.1990.122307","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122307","url":null,"abstract":"Straddle-board specimens consisting of a chip carrier connected by J-leads to a printed wiring board were tested isothermally at room temperature. Thermal expansions were simulated by controlling the deflection of the bisectioned printed wiring board. Initial results are presented from using the straddle-board configuration for material response and fatigue life analysis of actual surface-mounted joints. The leads were subjected to two typical extreme modes of deformation, longitudinal and transverse deflections, to determine the behaviors and damage in each case. It was found that the transverse component of the lead deflection, which increases in magnitude toward the corner of the chip carrier, is more damaging than the longitudinal component, which does not vary from lead to lead. The fatigue data, plotted as percent load drop versus cycles, follows a linear pattern during the initial stages of damage. The effects of stress relaxation on the rate of loading show a logarithmic correlation with deflection.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115848463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Computation of transients in lossy VLSI packaging interconnections","authors":"J. Liao, O. Palusinski, J. Prince","doi":"10.1109/ECTC.1990.122185","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122185","url":null,"abstract":"An efficient method for analyzing the dynamic behavior of lossy electrical interconnects (with frequency-dependent parameters) in VLSI Systems is presented. The method allows for inclusion of the electrical interconnects which are terminated by networks of lumped passive (R, L, C) and active nonlinear devices (diodes, and bipolar and MOS transistors). The method consists of deriving the circuit model for a transmission line from impulse-response data and incorporating this model into the UANTL (University of Arizona simulator for nonlinearly terminated transmission-line networks) computer program, which performs time-domain analysis for coupled transmission lines with nonlinear terminations. Several numerical experiments with this method were performed. Comparisons were made between the results obtained using this method and other published results.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131393023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bare chip test techniques for multichip modules","authors":"R. Fillion, R. Wojnarowski, W. Daum","doi":"10.1109/ECTC.1990.122242","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122242","url":null,"abstract":"A unique bare-chip test methodology has been developed based upon the GE high-density interconnect (HDI) technology. This methodology allows at-speed testing and screening of complex ASICs (application-specific integrated circuits) and microprocessor chips over the full military temperature range in standard chip-carrier test sockets without any special fixturing or probe cards or in clusters of common chips in a test array. The authors describe the HDI packaging approach and how it is being utilized to perform bare-ship pretest of RAM chips, processors, and complex ASICs and how it can be utilized to provide full preassembly burn-in.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127828461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Parametric shifts in devices: role of packaging variables and some novel solutions","authors":"R. Pendse, D. Jennings","doi":"10.1109/ECTC.1990.122209","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122209","url":null,"abstract":"The resistance-shift phenomena typically encountered in precision analog devices such as operational amplifiers which use the BiFET structure is discussed and resolved. A test chip consisting of fourteen implant resistors acting as piezoelectric strain gauges and temperature-sensing diodes for accurate recording of chip temperature was designed and fabricated. The incremental stressing effect of each packaging operation performed in sequence was measured and characterized using the chip. It was found that the chip-attachment operation results in small residual tensile stress at the chip surface corresponding to positive resistance shifts in the P-type regions of the chip. This stress state prevails in most ceramic packages; however; in plastic packages, severe compressive tractions resulting from the shrinkage of the plastic change the resistance shifts to large negative values for P-type resistors. This clearly limits the merits of low-stress die attach in plastic packages. The merits of some commonly used stress-reduction schemes such as compliant die attach, low-stress encapsulents, and die coatings were assessed. Some novel solutions to package stress, such as thermoplastic die attachment, five-sided coating, and silicon pad, are demonstrated.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115187771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. H. Maurer, K. Chao, E. Nhan, R. Benson, C. Bargeron
{"title":"Reliability study of gallium arsenide transistors","authors":"R. H. Maurer, K. Chao, E. Nhan, R. Benson, C. Bargeron","doi":"10.1109/ECTC.1990.122261","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122261","url":null,"abstract":"GaAs signal transistors of the MESFET and HEMT (high electron mobility transistor) technologies were evaluated in an accelerated life test to determine their reliability for space-borne applications. It was found that GaAs MESFET technology is sufficiently mature and reliable for space systems, but that the GaAs HEMT technology is not. Secondary electron and source current imaging of an NE 202 HEMT which had failed during life testing show a bright spot indicating a subsurface defect. The effect of this defect is to short the transistor so that it cannot be turned off. It is concluded that the subsurface defect causing failure in the NE 202 HEMT was either a latent defect present originally in the GaAs material or created during the aging test by the thermal runaway/bridging phenomenon.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124203820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Packaging technology for the NEC SX-3/SX-X Supercomputer","authors":"D. Akihiro, W. Toshihiko, N. Hideki","doi":"10.1109/ECTC.1990.122238","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122238","url":null,"abstract":"The LSI packaging technique utilized for the SX-3/SX-X is outlined. The VLSI chip is packaged in a chip carrier called the flipped tape-automated-bonding carrier (FTC), which has 604 input/output (I/O) bumps arranged in a matrix configuration on its bottom surface. The high-density multichip package (MCP) consists of a multilayer substrate (MLS) with a maximum of 100 FTCs and 11540 I/O pins. The MLS is a 225-mm*225-mm, 5.5-mm-thick ceramic substrate with a fine-line multilayer wiring part consisting of seven polyimide insulative layers and eight conductor layers. A multilayer board mounts the MCPs with novel zero insertion force (ZIF) connectors, and high-speed coaxial cablings are used for the interconnection system. Adoption of the ZIF-MCP connector allows insertion of multiple pin sat one stroke and high-speed interconnection. A sophisticated and reliable water cooling technique is used to cool the package efficiently. Water circulates from a cooling unit (CLU) to liquid cooling modules (LCM) that cover the MCPs. This system has a cooling capacity of up to 4-kW heat dissipation of the MCP.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123924793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and performance of high-reliability double-layer capacitors","authors":"J. Miller, D. Evans","doi":"10.1109/ECTC.1990.122204","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122204","url":null,"abstract":"The development, testing, and use of a highly reliable double-layer capacitor component designed for operation in the range of -55 degrees to 85 degrees C are described. This component offers a welded tantalum package with an innovative design to provide long life with stable electrical performance. Details of the design are presented along with life- and stress-test data. Unique characteristics are discussed and simple equivalent circuit models are described to assist application engineers in the optimal use of this component. Test results show the following: (1) >2000-h life at 85 degrees C and rated voltage; (2) > 20000 surge current cycles at 85 degrees C; (3) >1000-h life at 85 degrees C under 125% voltage stress conditions; and (4) >700-h operating life at 95 degrees C temperature stress conditions.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124423236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new power cycling technique for accelerated reliability evaluation of plated-through-holes and interconnects in PCBs","authors":"R. Munikoti, P. Dhar","doi":"10.1109/ECTC.1990.122225","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122225","url":null,"abstract":"A simple PCT (power cycling technique) that can rapidly assess the reliability of copper-plated-through-holes and associated interconnects in complex PCBs (printed circuit boards) has been developed. This PCT has been found to have the ability to quickly discriminate between barrels of good and poor reliability. Failure modes observed in PCT and MIL-T-shock test are identical; thus, a correlation between the two test techniques is valid. For PTH (plated-through-hole) barrels of poor quality, the correlation between the two methods regarding the number of cycles to failure is almost 1:1. This establishes the fact that PCT can, because of its avalanching effect, reliably screen PCBs of inferior quality in a short period of 100-120 cycles (15-20 h). A PCB passing 100-120 PCT cycles consistently passes 100 cycles of MIL-P-55110. The converse is also true. A near 2:1 correlation has been found between PCT and MIL-T-shock for PTH copper barrels of good quality. The design of a standard PCT coupon which will facilitate the use of fixed current levels for given barrel and track resistances and will allow comparison of reliability data from different sources is presented.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125957094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}