Computation of transients in lossy VLSI packaging interconnections

Abstract

An efficient method for analyzing the dynamic behavior of lossy electrical interconnects (with frequency-dependent parameters) in VLSI Systems is presented. The method allows for inclusion of the electrical interconnects which are terminated by networks of lumped passive (R, L, C) and active nonlinear devices (diodes, and bipolar and MOS transistors). The method consists of deriving the circuit model for a transmission line from impulse-response data and incorporating this model into the UANTL (University of Arizona simulator for nonlinearly terminated transmission-line networks) computer program, which performs time-domain analysis for coupled transmission lines with nonlinear terminations. Several numerical experiments with this method were performed. Comparisons were made between the results obtained using this method and other published results.<>