无源硅载流子的设计与特性

40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI:10.1109/ECTC.1990.122243

H. Schettler

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引用次数: 5

摘要

提出了一种用于9个超大规模集成电路芯片的硅对硅封装。该载波是专门为支持CMOS或BiCMOS等互补逻辑的高频电流浪涌而设计的。它包含集成的去耦电容器，并使用三层金属。芯片采用可控折叠芯片连接方式安装。装配了包含9个CMOS芯片的A /370处理器。功能和可制造性已成功证明。

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Passive-silicon-carrier design and characteristics

A silicon-on-silicon package for nine VLSI chips is presented. The carrier is especially designed to support the high-frequency current surges of complementary logic like CMOS or BiCMOS. It contains integrated decoupling capacitors and uses three layers of metal. The chips are mounted by controlled-collapse chip connection. A /370 processor containing nine CMOS chips has been assembled. Functionality and manufacturability have successfully been demonstrated.<>

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来源期刊

40th Conference Proceedings on Electronic Components and Technology

CiteScore

3.10

自引率

0.00%

发文量