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Effects of polymer/metal interaction in thin-film multichip module applications 聚合物/金属相互作用对薄膜多芯片模块应用的影响
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122269
G. Adema, I. Turlik, P.L. Smith, M. Berry
{"title":"Effects of polymer/metal interaction in thin-film multichip module applications","authors":"G. Adema, I. Turlik, P.L. Smith, M. Berry","doi":"10.1109/ECTC.1990.122269","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122269","url":null,"abstract":"An investigation was conducted to examine the effects of different polyimide/metal combinations on structures similar to those used in thin-film multichip module applications. Three different metal structures and three commercially available spin-on polyimide materials which possess different molecular structures were examined. Transmission electron microscopy was used to study the polyimide/metal interfaces. Measurements of the transmission characteristics of line structures fabricated using the different metal/polyimide combinations were compared. It was found that the extent of interaction of polyimide with copper is dependent upon the type of polyimide used. Dupont 2611D polyimide showed the least amount of interaction with only a small band of precipitates present approximately 5 kAA from the copper/polyimide interface, which do not affect the electrical transmission characteristics of lines spaced 22 mu m a part. The use of an electrodes nickel layer on copper to retard copper/polyimide interaction from occurring during the curing cycle of the polyimide was found to be effective. However, increased loss of transmission at high frequencies and narrow spacing was seen for nickel-clad lines embedded in Dupont 2611D polyimide. Since nickel is a magnetic material, this increase in loss may be due to natural inductance from the nickel present in neighboring lines.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127868457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Semi-aqueous cleaning: an alternative to halogenated solvents 半水清洗:卤化溶剂的替代品
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122196
M. Hayes
{"title":"Semi-aqueous cleaning: an alternative to halogenated solvents","authors":"M. Hayes","doi":"10.1109/ECTC.1990.122196","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122196","url":null,"abstract":"Terpene-based formulations have been shown to be the only viable substitutes for chlorofluorocarbons (CFCs) and other halogenated solvents in electronic defluxing applications. Terpene-based cleaners are safe for employees and the environment, they are effective for conventional and surface-mount technology, and they are cost competitive with CFCs. High-performance terpene cleaners have beep proven in commercial defluxing operations for more than three years, and they are available in adequate quantities to meet the requirements of the industry. Cleaning machines suitable for use with terpenes are available from most of the major equipment manufacturers, and a number of other equipment makers are expected to introduce terpene-compatible machines in the near future. On the basis of their performance, economics, and environmental attributes, it is reasonable to expect terpene-based products to capture a significant share of printed wiring assembly (PWA) (especially SMT, or surface-mount technology) cleaning capacity in the years to come.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128805160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
YBa/sub 2/Cu/sub 3/O/sub 6-x/-based thick film resistor YBa/sub 2/Cu/sub 3/O/sub 6-x/基厚膜电阻器
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122205
Fu Shen-Li, Y. Hsieh
{"title":"YBa/sub 2/Cu/sub 3/O/sub 6-x/-based thick film resistor","authors":"Fu Shen-Li, Y. Hsieh","doi":"10.1109/ECTC.1990.122205","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122205","url":null,"abstract":"Owing to the low resistivity and small positive temperature coefficient of resistivity around room temperature of the YBa/sub 2/Cu/sub 3/O/sub 7-x/ superconductor, thick film resistor paste is prepared by utilizing YBa/sub 2/Cu/sub 3/O/sub 7-x/ as the functional phase of the resistor. Ag/sub 2/O and PbO are added to increase the density of the fired film and to achieve the resistivity distribution for practical applications. Sheet resistivities ranging from a few ohms per square to several megaohms per square, are obtained by adjusting the contents of YBa/sub 2/Cu/sub 3/O/sub 7-x/, Ag/sub 2/O, and PbO. Large negative temperature coefficients of resistivity are obtained for resistors with higher resistivity values. Since both YBa/sub 2/Cu/sub 3/O/sub 7-x/ and silver exhibit a positive temperature coefficient of resistivity, the negative temperature coefficient of resistivity is thus attributed to the addition of PbO.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128811888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computer integrated manufacturing-an enterprise view 计算机集成制造——一个企业视角
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122260
C. P. Terpack
{"title":"Computer integrated manufacturing-an enterprise view","authors":"C. P. Terpack","doi":"10.1109/ECTC.1990.122260","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122260","url":null,"abstract":"Since the mid 1980s, IBM sites have been implementing the CIM (computer-integrated manufacturing) philosophy, resulting in significant improvements in cost, resources, and responsiveness. In the process of reviewing the information systems applications, it became apparent that many applications performed the same or similar functions. This has resulted in a building-block approach to CIM applications. Base applications will provide common functions. Customers will then be able to supplement these functions with applications common to their business areas. Customers will be able to add their own unique applications to address specific requirements. IBM is working closely with its customers and internal users to define the common requirements. This partnership with customers provides improved requirements definition, reduced development and maintenance costs, the ability to test in production environments, and accelerated delivery to the marketplace.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128319166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
In-situ calibration of stress chips 应力芯片的原位校准
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122280
A. Bastawros, A. Voloshin
{"title":"In-situ calibration of stress chips","authors":"A. Bastawros, A. Voloshin","doi":"10.1109/ECTC.1990.122280","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122280","url":null,"abstract":"A novel procedure employing moire interferometry has been successfully implemented for the accurate in-situ calibration of stress chips. Strains were measured by this accurate and extremely sensitive technique at the locations of the gauges and related to corresponding gauge-resistance changes. The approach is immune from many of the drawbacks of earlier calibration procedures and has eliminated the need to know the piezoresistive properties of the strain-gauge material, which constituted a major difficulty in properly interpreting gauge-resistance changes in terms of strains at the gauge locations. A characteristic gauge factor, S, for each type of strain gauge has been introduced and shown to be the only gauge character to be determined. It reflects how different gauge types react to the same strain. It is suggested that the strain gauges be designed such that the gauge factor is as high as possible, thereby minimizing sensitivity to measurement errors. In addition to being flexible and applicable to new and existing stress chips, the procedure is expected to spread the use of diffused-resistor strain gauges as a realistic monitor of chip strains in addressing reliability concerns.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131744377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A low inductance capacitor technology 一种低电感电容技术
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122203
J. Oberschmidt, J. Humenik
{"title":"A low inductance capacitor technology","authors":"J. Oberschmidt, J. Humenik","doi":"10.1109/ECTC.1990.122203","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122203","url":null,"abstract":"The authors have demonstrated the ability to make a novel type of multilayer ceramic capacitor that combines thick-film and thin-film processing techniques to produce a part with extremely low inductance, low resistance, and high capacitance in a reliable structure. This capacitor can be used to minimize the Delta-I noise that can trigger the erroneous switching of circuits in a computer. The capacitor is designed to reduce the inductance of the system. It is concluded that the development of this technology will allow the continued development of faster computer systems.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131961449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Capacitance: relationships and measurements (for multiple conductors in VLSI packages and PWB) 电容:关系和测量(用于VLSI封装和PWB中的多导体)
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122183
R. E. Canright
{"title":"Capacitance: relationships and measurements (for multiple conductors in VLSI packages and PWB)","authors":"R. E. Canright","doi":"10.1109/ECTC.1990.122183","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122183","url":null,"abstract":"Three descriptions of capacitances for multiple conductors over a ground are discussed: the lumped-element capacitance, the two-terminal capacitance, and Maxwell's capacitance. Equations that completely interrelate the different descriptions of capacitance are presented. Experimental evidence supporting the two-terminal measurement technique is presented. An example how the measurement can be applied to the VLSI package is given. It is also shown how networks of cross-coupled resistors can be measured.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132022185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Aluminium sputter deposition onto polyimide-coated substrates 铝溅射沉积在聚酰亚胺涂层基底上
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122218
S. Kobayashi, A. Okamoto, Y. Narizuka, T. Arai, A. Kenmotsu, M. Tanaka, Y. Kawasaki
{"title":"Aluminium sputter deposition onto polyimide-coated substrates","authors":"S. Kobayashi, A. Okamoto, Y. Narizuka, T. Arai, A. Kenmotsu, M. Tanaka, Y. Kawasaki","doi":"10.1109/ECTC.1990.122218","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122218","url":null,"abstract":"An aluminium deposition process onto PIQ (polyimide isoindroqui hazoline-dione: Hitachi Chemical)-coated substrates was developed for a continuous cassette-to-cassette sputtering machine. The baking process of the substrates in vacuum was studied for various film thicknesses and heating rates. PIQ releases water vapor upon heating in a vacuum and gives a maximum release rate at around 120 degrees C with a heating rate of 56 degrees C/min. PIQ was found to contain 0.5 wt% water vapor in a clean-room environment. PIQ-coated substrates were found to have a sufficiently stable and high emissivity, and the infrared thermometer was successfully applied. The double electromagnet sputtering cathode has been employed to ensure uniformity and long target life. Aluminium film characterization was done for the specularity, microstructure, and thermal stress.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134290712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Planar waveguide devices on silicon 硅基平面波导器件
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122167
T. Miyashita
{"title":"Planar waveguide devices on silicon","authors":"T. Miyashita","doi":"10.1109/ECTC.1990.122167","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122167","url":null,"abstract":"A wide variety of planar optical waveguide devices were developed based on silica-glass-on-silicon technology. High-performance waveguides with low loss and precisely controlled geometry are formed on silicon substrates by a combination of flame hydrolysis deposition and photolithographic and reactive ion etching processes. This optical-fiber-compatible planar waveguide technology is flexible enough to provide a wide variety of high-performance and cost-effective optical devices such as branching, wavelength division multidemultiplexer, frequency control, switching and interconnection devices.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124540862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal stress/strain analysis of ceramic quad flat pack packages and interconnections 陶瓷四平面封装和互连的热应力/应变分析
40th Conference Proceedings on Electronic Components and Technology Pub Date : 1990-05-20 DOI: 10.1109/ECTC.1990.122285
J. Lau, D. Rice
{"title":"Thermal stress/strain analysis of ceramic quad flat pack packages and interconnections","authors":"J. Lau, D. Rice","doi":"10.1109/ECTC.1990.122285","DOIUrl":"https://doi.org/10.1109/ECTC.1990.122285","url":null,"abstract":"An elastoplastic analysis of the thermal stresses and strains in a surface-mount fine-pitch assembly using a 3-D nonlinear finite-element method is presented. This fine-pitch component is the EIAJ (Electronic Industry Associates of Japan) 160-pin ceramic quad flat pack (CQFP). For comparison purposes, the EIAJ 160-pin plastic quad flat pack (PQFP) was also analyzed. Detailed stress and strain distributions and whole-field displacements of the lead frame and solder joint are provided for a better understanding of their mechanical behavior during thermal cycling. It was found that the stresses and strains in the CQFP solder joint are larger than those in the PQFP. The results presented should be useful in the design for reliability of this class of surface-mount assemblies.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128950761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
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