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2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)最新文献

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Design of CMOS APS and floating gate dosimeters CMOS APS和浮栅剂量计的设计
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237370
Ignacio Martinez Vazquez, A. Faigón
{"title":"Design of CMOS APS and floating gate dosimeters","authors":"Ignacio Martinez Vazquez, A. Faigón","doi":"10.1109/EAMTA.2015.7237370","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237370","url":null,"abstract":"We design and optimize two non-standard dosimeter circuits: an Active Pixel Sensor and a Floating Gate Sensor, for fabrication on a standard CMOS process. An Active Pixel Sensor is found suitable for dose rates down to 3.6 mGy s-1, with a sensitivity of 7.1 V Gy-1. A Floating Gate dosimeter is optimized for a sensitivity of 46mV Gy-1, with a noise-equivalent dose of 0.2mGy.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123309074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of an on-chip ionizing radiation differential sensor 片上电离辐射差分传感器的设计
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237372
S. Carbonetto, M. Garcia-Inza, E. Redin, A. Faigón
{"title":"Design of an on-chip ionizing radiation differential sensor","authors":"S. Carbonetto, M. Garcia-Inza, E. Redin, A. Faigón","doi":"10.1109/EAMTA.2015.7237372","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237372","url":null,"abstract":"A new design for an on-chip ionizing radiation sensor is presented. The circuit consists of two source-coupled Field Oxide Transistors biased with the same drain current through a feedback loop, whose offset in the gate voltage is amplified. This paper explains the design criteria for integration of the sensor in a 0.5 μm CMOS process. The design was validated with simulations and showed the expected behavior.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"120 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128489715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Commercial CMOS pixel array for beta and gamma radiation particle counting 用于辐射粒子计数的商用CMOS像素阵列
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237371
M. Pérez, M. S. Haro, I. Sidelnik, Leandro Tozzi, D. R. Brito, Carlos Mora, J. J. Blostein, M. Gómez Berisso, J. Lipovetzky
{"title":"Commercial CMOS pixel array for beta and gamma radiation particle counting","authors":"M. Pérez, M. S. Haro, I. Sidelnik, Leandro Tozzi, D. R. Brito, Carlos Mora, J. J. Blostein, M. Gómez Berisso, J. Lipovetzky","doi":"10.1109/EAMTA.2015.7237371","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237371","url":null,"abstract":"We present the response of a Commercial-Off-The-Shelf (COTS) CMOS image sensor to different ionizing particles, with the aim of developing a low cost radiation detector. We first analyze the images obtained by exposing the imagers to X-rays from 55Fe, gamma and beta particles from 137Cs. Then the detector is successfully used to monitor different gamma fluxes produced by the RA6 nuclear research reactor, Argentina, during a startup procedure.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116511625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Quantized bands model for the determination of the dielectric constant of high-κ layers 确定高κ层介电常数的量化能带模型
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237377
L. Sambuco Salomone, O. Beldarrain, F. Campabadal, A. Faigón
{"title":"Quantized bands model for the determination of the dielectric constant of high-κ layers","authors":"L. Sambuco Salomone, O. Beldarrain, F. Campabadal, A. Faigón","doi":"10.1109/EAMTA.2015.7237377","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237377","url":null,"abstract":"A quantized bands model capable to generate capacitance-voltage (C-V) curves of MOS capacitors was implemented and numerical details are discussed. This model is applied to the extraction of the dielectric constant of Al2O3 layers with known physical thicknesses by fitting experimental results. A comparison with a continuum band model is presented.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"42 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131263715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Application of genetic algorithms in the design of robust active filters 遗传算法在鲁棒有源滤波器设计中的应用
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237369
M. Lovay, G. Peretti, E. Romero
{"title":"Application of genetic algorithms in the design of robust active filters","authors":"M. Lovay, G. Peretti, E. Romero","doi":"10.1109/EAMTA.2015.7237369","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237369","url":null,"abstract":"This paper presents a genetic algorithm (GA) based method for designing two second-order active filters, proposed as cases of study. The GA must determine the values of the passive components (resistors and capacitors) of each filter in order to obtain a configuration that minimizes the sensitivity to variations of the same and also presents design errors minor to a defined maximum value, with respect to certain specifications. The optimization problem to be addressed by the GA is a multiobjective optimization problem. In both cases of study, the algorithm runs considering two possible scenarios with respect to the component values. The results show that the GA can get in both situations filter configurations that meet the established criteria.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124762350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Modified optical fiber Bragg grating accelerometer 改进的光纤布拉格光栅加速度计
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237374
M. A. Casas-Ramos, G. E. Sandoval-Romero
{"title":"Modified optical fiber Bragg grating accelerometer","authors":"M. A. Casas-Ramos, G. E. Sandoval-Romero","doi":"10.1109/EAMTA.2015.7237374","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237374","url":null,"abstract":"The paper presents an optical fiber Bragg grating (FBG) accelerometer, using a modified cantilever beam design to get the highest possible strain in the FBG and a wide natural frequency. This accelerometer modeled a system composed by a mass mounted at the free end of a cantilever beam, which is also attached to an optic fiber whose length is varied by the movement of the mass. The objective is to compare the measured deflection, natural frequency and sensitivity with the predicted ones. The sensitivity and frequency response range has been enhanced compared to the conventional cantilever designs: surface mounted, patch mounted FBG and L-shape. Achieving a sensitivity of about 330 pm/g and a natural frequency of 227.3 Hz.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130333759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A VLSI convolutional neural network architecture for vanishing point computation 一种用于消失点计算的VLSI卷积神经网络结构
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237379
M. Villemur, M. Di Federico, P. Julián
{"title":"A VLSI convolutional neural network architecture for vanishing point computation","authors":"M. Villemur, M. Di Federico, P. Julián","doi":"10.1109/EAMTA.2015.7237379","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237379","url":null,"abstract":"This paper presents a VLSI Convolutional Neural Network with special features to implement the Vanishing Point algorithm. The architecture is based on a multi-scale array, with one column processor that implements a neural network with local connectivity, a row processor of SIMD elements that can implement generic convolution and a voting mechanism, which is used by the Vanishing Point algorithm. In addition, a 32-bit 7 pipeline-stage has been designed to sequence all the operations. Simulations of the architecture described in a Hardware description language are shown.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126261017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurements of the 12 nA low frequency oscillator 12na低频振荡器的测量
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237373
P. Cayuela, A. Arnaud
{"title":"Measurements of the 12 nA low frequency oscillator","authors":"P. Cayuela, A. Arnaud","doi":"10.1109/EAMTA.2015.7237373","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237373","url":null,"abstract":"In this work, measurements of the two versions of the 12 nA Low Frequency Oscillator is presented. The circuit designed in a standard 0.6 μm MOS technology with most of the transistors operating in weak inversion, includes self-bias current and voltage references, and can be powered with a wide range supply voltage from 1.2 to 5.0 V. The oscillator is intended as part of the next generation of portable or autonomous devices, powered by microbatteries or energy harvesting systems.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115375668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TRAM applied to second-order active filter designed in CMOS technology 将TRAM应用于CMOS技术设计的二阶有源滤波器
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237378
S. Pazos, F. Aguirre, E. Romero, G. Peretti, S. Verrastro
{"title":"TRAM applied to second-order active filter designed in CMOS technology","authors":"S. Pazos, F. Aguirre, E. Romero, G. Peretti, S. Verrastro","doi":"10.1109/EAMTA.2015.7237378","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237378","url":null,"abstract":"The ability of TRAM for detecting parametric faults in a second-order filter selected as a case of study is studied in this work. Particularly, we adopt a low-pass Sallen-Key filter synthesized on a 500nm CMOS technology. We perform the design using diffused resistors, poly-poly capacitors and a full-custom operational amplifier. For fault injection and simulation, we adopt a previously reported fault model. Different combinations of test parameters are evaluated in this paper with the aim of determining the tradeoff between fault coverage and complexity of the test. Our results show that the simultaneous monitoring of peak time and overshoot gives reasonable fault coverage. The monitoring of other test parameters causes (in some cases) an improvement that should be considered as marginal.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128939088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A selectable bandwidth LNA based on current conveyors 基于电流传送带的可选带宽LNA
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI: 10.1109/EAMTA.2015.7237375
H. García-Vázquez, S. Khemchandani, C. Dualibe, J. del Pino
{"title":"A selectable bandwidth LNA based on current conveyors","authors":"H. García-Vázquez, S. Khemchandani, C. Dualibe, J. del Pino","doi":"10.1109/EAMTA.2015.7237375","DOIUrl":"https://doi.org/10.1109/EAMTA.2015.7237375","url":null,"abstract":"A selectable bandwidth CMOS Low Noise Amplifier (LNA) implemented in UMC 90nm process is presented. The LNA employs two current conveyors as building blocks to implement a wideband UHF (470 MHz to 862 MHz) voltage amplifier. By means of a switch and an LC tank added at the output, the LNA can operate also in the GSM narrowband (1.8 GHz). Using this simple technique it is possible to use only one LNA for both standards. Simulation results validate the proposed circuit. The simulated power gain (S21) is 13 dB for UHF band, and 6 dB for GSM. The input return loss (S11) is better than -10 dB in both modes. The amplifier has a simulated noise figure (NF) of 5.8 dB for UHF band and 6.3 dB when it is working in GSM band. This amplifier draws 3.9 mA from a ±1.2V supply.","PeriodicalId":101792,"journal":{"name":"2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)","volume":"98 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120823690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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