Design of CMOS APS and floating gate dosimeters

Abstract

We design and optimize two non-standard dosimeter circuits: an Active Pixel Sensor and a Floating Gate Sensor, for fabrication on a standard CMOS process. An Active Pixel Sensor is found suitable for dose rates down to 3.6 mGy s-1, with a sensitivity of 7.1 V Gy-1. A Floating Gate dosimeter is optimized for a sensitivity of 46mV Gy-1, with a noise-equivalent dose of 0.2mGy.