确定高κ层介电常数的量化能带模型

2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI:10.1109/EAMTA.2015.7237377

L. Sambuco Salomone, O. Beldarrain, F. Campabadal, A. Faigón

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引用次数: 1

摘要

实现了一种能够生成MOS电容器电容-电压(C-V)曲线的量化带模型，并讨论了数值细节。通过拟合实验结果，将该模型应用于已知物理厚度的Al2O3层介电常数的提取。并与连续带模型进行了比较。

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Quantized bands model for the determination of the dielectric constant of high-κ layers

A quantized bands model capable to generate capacitance-voltage (C-V) curves of MOS capacitors was implemented and numerical details are discussed. This model is applied to the extraction of the dielectric constant of Al2O3 layers with known physical thicknesses by fitting experimental results. A comparison with a continuum band model is presented.

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来源期刊

2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)

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