12na低频振荡器的测量

2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI:10.1109/EAMTA.2015.7237373

P. Cayuela, A. Arnaud

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引用次数: 0

摘要

在这项工作中，对两个版本的12 nA低频振荡器进行了测量。该电路采用标准的0.6 μm MOS技术设计，大部分晶体管工作在弱反转中，包括自偏置电流和电压参考，可以在1.2至5.0 V的宽范围供电。该振荡器旨在作为下一代便携式或自主设备的一部分，由微电池或能量收集系统供电。

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Measurements of the 12 nA low frequency oscillator

In this work, measurements of the two versions of the 12 nA Low Frequency Oscillator is presented. The circuit designed in a standard 0.6 μm MOS technology with most of the transistors operating in weak inversion, includes self-bias current and voltage references, and can be powered with a wide range supply voltage from 1.2 to 5.0 V. The oscillator is intended as part of the next generation of portable or autonomous devices, powered by microbatteries or energy harvesting systems.

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来源期刊

2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)

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