Design of an on-chip ionizing radiation differential sensor

S. Carbonetto, M. Garcia-Inza, E. Redin, A. Faigón
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引用次数: 2

Abstract

A new design for an on-chip ionizing radiation sensor is presented. The circuit consists of two source-coupled Field Oxide Transistors biased with the same drain current through a feedback loop, whose offset in the gate voltage is amplified. This paper explains the design criteria for integration of the sensor in a 0.5 μm CMOS process. The design was validated with simulations and showed the expected behavior.
片上电离辐射差分传感器的设计
提出了一种新的片上电离辐射传感器的设计方案。该电路由两个源耦合的场氧化晶体管组成,通过一个反馈环偏置具有相同漏极电流,其在栅极电压中的偏移被放大。本文阐述了在0.5 μm CMOS工艺中集成传感器的设计准则。通过仿真验证了该设计,并显示了预期的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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