CMOS APS和浮栅剂量计的设计

2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA) Pub Date : 2015-07-30 DOI:10.1109/EAMTA.2015.7237370

Ignacio Martinez Vazquez, A. Faigón

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引用次数: 0

摘要

我们设计并优化了两个非标准剂量计电路:一个有源像素传感器和一个浮门传感器，用于在标准CMOS工艺上制造。有源像素传感器适用于低至3.6 mGy - s-1的剂量率，灵敏度为7.1 V Gy-1。浮栅剂量计的灵敏度为46mV Gy-1，噪声等效剂量为0.2mGy。

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Design of CMOS APS and floating gate dosimeters

We design and optimize two non-standard dosimeter circuits: an Active Pixel Sensor and a Floating Gate Sensor, for fabrication on a standard CMOS process. An Active Pixel Sensor is found suitable for dose rates down to 3.6 mGy s-1, with a sensitivity of 7.1 V Gy-1. A Floating Gate dosimeter is optimized for a sensitivity of 46mV Gy-1, with a noise-equivalent dose of 0.2mGy.

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来源期刊

2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA)

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