IEEE Transactions on Materials for Electron Devices最新文献

{"title":"Call for Papers: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications","authors":"","doi":"10.1109/TMAT.2025.3562290","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3562290","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10970663","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Electron Devices Society","authors":"","doi":"10.1109/TMAT.2025.3561623","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3561623","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10967368","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143845496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Implementation of Low Temperature Co-Fired Ceramic Packages for All Solid-State Hydrogen Sensor Modules","authors":"Mun-Cheol Paek;Han-Won Ryu;Hyun Hwangbo;Yong-Ha Lee;Chong-Ook Park","doi":"10.1109/TMAT.2025.3562178","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3562178","url":null,"abstract":"We have implemented LTCC (Low Temperature Co-Fired Ceramics) based packages for all solid-state electrochemical hydrogen sensor modules. The hydrogen sensor utilizing a solid electrolyte is designed to have a hetero-junction structure of a proton conductor and an oxygen ion conductor. LTCC is a composite material of ceramic powders and glass frits, and can be sintered at a low temperature of 900 °C or less, and has superior electrical, mechanical, and thermal properties compared to PCB. In this study, we developed a package technology for hydrogen sensor modules using this LTCC material. A double layer structure is used to form the package, and in the bottom plate, a mount for the hydrogen sensor, line guides for air flow, and guides to support the wires are fabricated. Laser pulses are employed to form 3D structures of LTCC including the mounting cavities and vias to connect the metal electrodes of the sensor. The hydrogen sensor is mounted in the center of the bottom plate and connected to the Ag/Pt electrode formed at the backside of the plate through 4 wires and via holes. The measurement results to check the hydrogen response of the sensors using LTCC packages show that the solid-state electrochemical voltage change from 248.2 ∼ 296.4 mV to 472.8 ∼ 554.5.2 mV for hydrogen concentration from 0.5 to 4.0% in the air. The electrochemical voltage of this sensor is linearly proportional to the logarithm of the hydrogen partial pressure. The reproducibility tests show that the change of the sensitivity of the sensor was within 4.3% deviation for 3 times repeat test. This reaction sensitivity remains the same with a deviation of less than 1.2% in the test even after 52 days. In the thermal shock test for environmental evaluation, all hydrogen sensor packages fabricated in this study show normal operation.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"42-48"},"PeriodicalIF":0.0,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Overview of Testing Methods for Mechanical and Adhesion Properties of Materials in Semiconductor Packages","authors":"Seung Jin Oh;Jae Hak Lee;Seung Man Kim;Seongheum Han;Ah-Young Park;Hyunkyu Moon;Jun-Yeob Song","doi":"10.1109/TMAT.2025.3561740","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3561740","url":null,"abstract":"Mechanical testing methodologies are essential for advancing semiconductor packaging processes, ensuring the mechanical reliability of devices subjected to increasingly complex manufacturing processes and operational conditions. In recent years, advanced packaging technologies, including system-in-package (SiP) using 2.xD and 3D integration, have played a crucial role in enabling high-performance electronic devices. However, the miniaturization of device structures and integration of materials with mismatched thermomechanical properties have introduced significant mechanical challenges, including warpage, interfacial delamination, and fracture-induced failures. This review comprehensively evaluates key mechanical testing methodologies used to characterize the material properties and interfacial reliability of materials in semiconductor packages. Techniques such as the tensile test and double-cantilever beam (DCB) test are critically examined, with a focus on their effectiveness in assessing thin-film mechanical behavior, adhesion properties, and fracture mechanisms in miniaturized semiconductor structures. Furthermore, this review highlights the limitations of traditional testing techniques in micro- and nanoscale applications and explores emerging testing approaches. By providing a comparative analysis of mechanical testing techniques and their applications in semiconductor packaging, this work aims to provide insights for optimizing reliability evaluation strategies and guiding future developments in advanced packaging technologies.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"49-63"},"PeriodicalIF":0.0,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143937983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature-Agnostic Pt/Au Ohmic Contacts on n-Type Gallium Nitride for Self-Aligned MOSFETs","authors":"Kevin J. Reilly;Andrew T. Binder;Jeffrey Steinfeldt;Andrew Allerman;Robert J. Kaplar","doi":"10.1109/TMAT.2025.3559869","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3559869","url":null,"abstract":"Five alternative metals are investigated as ohmic contacts to <italic>n</i>-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on <italic>n</i>-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for <italic>p</i>-dopant activation. In the present work, an <italic>n</i>-GaN bilayer, consisting of a thin heavily doped contact layer (<italic>n₀</i> = 1 × 10²⁰ cm⁻³) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on <italic>n</i>-GaN. Pt/Au metallization is demonstrated as an ohmic contact to <italic>n</i>-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the <italic>n</i>-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"34-41"},"PeriodicalIF":0.0,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient and Robust Resistive Switching Behaviour of MoS$_{2}$ Based Memristor","authors":"Harsh Ranjan;Chandra Prakash Singh;Vivek Pratap Singh;Saurabh Kumar Pandey","doi":"10.1109/TMAT.2025.3559871","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3559871","url":null,"abstract":"This study investigates the resistive-switching characteristics of MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>-based memristors, demonstrating their potential for different device applications. The device, composed of MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> nanosheets positioned between silver (Ag) and fluorine-doped tin oxide (FTO) electrodes, exhibits distinct switching behaviors under different conditions. Under DC bias, the device initially shows rectification-mediated switching, characterized by asymmetric current-voltage (I-V) curves due to Schottky barriers at the MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>-metal interfaces. However, upon ultra violet (UV) illumination, the device transitions to conductance-mediated switching, which is attributed to the generation of photogenerated carriers that reduce Schottky barriers and enhance conductivity. This transition provides a controllable mechanism for tuning the resistive states, enabling precise modulation of the device's performance. The memristor demonstrates repeatable and stable switching characteristics, making it suitable for low-power memory applications and neuromorphic systems. Furthermore, the dual response to both voltage and light makes the MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula> memristor a promising candidate for developing light-tunable memory devices that can emulate synaptic behavior. These results highlight the potential of MoS<inline-formula><tex-math>$_{2}$</tex-math></inline-formula>-based memristors for integration into advanced memory and computational systems, offering a path toward energy-efficient, flexible, and multifunctional devices.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"18-25"},"PeriodicalIF":0.0,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Devices","authors":"","doi":"10.1109/TMAT.2025.3558658","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3558658","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10959323","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Electron Device Letters","authors":"","doi":"10.1109/TMAT.2025.3558659","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3558659","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10959322","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design, Fabrication, Modeling and Characterization of a Polyimide-Based Membrane for High Strain Studies in Microfabricated Devices","authors":"Loïc Lahaye;Nicolas Roisin;Nicolas André;Denis Flandre;Jean-Pierre Raskin","doi":"10.1109/TMAT.2025.3557763","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3557763","url":null,"abstract":"This paper reports the design, integration, modeling and characterization of single crystalline (c-Si) resistors on a 3.6 μm-thick and 2.7 mm-diameter polyimide MEMS membrane. We propose a straightforward <italic>top-down</i> fabrication scheme to integrate any microfabricated devices onto a flexible membrane. A <italic>bulge-test</i> setup is assembled to measure the deflection of the membrane under a white light interferometer. In addition, a finite elements method (FEM) model is introduced to predict the behavior of the membrane under increasing pressure up to 80 kPa. The parameters of the FEM simulation are tuned with the deflection results to extract the strain tensor, showing a maximal biaxial strain of 0.37% at 80 kPa in the 300 nm-thick c-Si devices. Raman spectroscopy is finally employed to confirm the FEM results by comparing the estimated Raman peak-shift with actual Raman measurements. The shift predicted using phonon-deformation potential (PDP) theory shows excellent agreement with the experimental validation, giving confidence in the FEM model.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"26-33"},"PeriodicalIF":0.0,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Resistive Switching in Dopant-Free BFO Devices via TiO2 Insertion","authors":"Shah Zahid Yousuf;Sreenivasulu Mamilla;N V L Narasimha Murty","doi":"10.1109/TMAT.2025.3552354","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3552354","url":null,"abstract":"This work reports the tailoring of resistive switching behavior in multilayer BiFeO₃/TiO₂ heterostructures through controlled oxygen vacancies. TiN/TiO₂/BFO/Pt devices are fabricated using a sputtering process and the effect of BFO thickness on grain size, oxygen vacancies and in turn, on the memory window is investigated. The grain size was observed to be dependent on thickness, influencing the density of grain boundaries and consequently altering the oxygen vacancies. Furthermore, the resistive cell's switching behavior and conduction mechanism are systematically investigated. This study reveals notable enhancements in resistive switching behavior, including an increased memory window and improved endurance, due to the insertion of the TiO₂ layer. The incorporation of TiO₂ improves the resistive switching performance of BFO-based thin films by reducing defects, as confirmed by XPS analysis, thus enhancing stability and reproducibility. TiO₂ modulates oxygen vacancies, regulating their distribution within the BFO layer and reducing their density, which directly improves switching behavior. It also enables more uniform electroforming and SET/RESET processes, boosting retention, endurance, and reliability. Furthermore, TiO₂ may alter the local electric field, potentially lowering the switching voltage and increasing energy efficiency. The devices demonstrate resistive switching behavior at nanoscale dimensions, as indicated by conductive atomic force microscopy measurements. Remarkably, devices with 80 nm thick BFO on 20 nm thick TiO₂ exhibit a high ON/OFF current ratio of 1850 at a read voltage of 0.5 V and stable endurance up to 5.8×10⁶ cycles at room temperature, which is highest so far reported in multilayer BFO rewritable resistive devices. The devices have shown data retention of 10 years with less variation. Our findings indicate that the manipulation of oxygen vacancies through TiO₂/BFO bilayer heterostructures holds significant potential as a promising switching layer in the development of advanced RRAM devices with significantly enhanced performance characteristics.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"9-17"},"PeriodicalIF":0.0,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}