IEEE Transactions on Materials for Electron Devices最新文献

{"title":"Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TMAT.2025.3535909","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3535909","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10869512","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143105656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wide Band Gap Semiconductors for Automotive Applications Call for Papers","authors":"","doi":"10.1109/TMAT.2025.3529277","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529277","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844544","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers: Special Issue on Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications","authors":"","doi":"10.1109/TMAT.2025.3529352","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529352","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844545","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on:","authors":"","doi":"10.1109/TMAT.2025.3529353","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529353","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844543","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2024 Index IEEE Transactions on Materials for Electron Devices Vol. 1","authors":"","doi":"10.1109/TMAT.2025.3529194","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529194","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"222-229"},"PeriodicalIF":0.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10841915","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Framework for Exploring Gate-Dielectric Materials for High-Performance Two-Dimensional Field-Effect-Transistors","authors":"Ankit Kumar;Lin Xu;Albert Ho;Arnab Pal;Kunjesh Agashiwala;Kamyar Parto;Wei Cao;Kaustav Banerjee","doi":"10.1109/TMAT.2024.3513236","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3513236","url":null,"abstract":"The choice and engineering of the gate-dielectric (GD) is of paramount importance to the performance and energy-efficiency of two-dimensional (2D) field-effect-transistors (FETs) that are considered to be primary candidates for sub-10 nm gate length (L\u0000_g\u0000) metal-oxide-semiconductor FETs (MOSFETs). Despite remarkable progress achieved in recent years by the semiconductor-industry towards realization of high-performance 2D FETs based on transition-metal dichalcogenides (TMDs), achieving fast switching speeds and low device leakage currents remain an open challenge. More specifically, the effect of traps at the dielectric-2D interface and bulk defects in the dielectric on device performance have not been thoroughly investigated. In this paper, taking a common 2D-TMD material molybdenum disulfide (MoS\u0000₂\u0000) as an example, we explore various GDs and dielectric-stacks – their interfaces, traps and defects, by using rigorous ab-initio density-functional-theory (DFT) and non-equilibrium-Green's-function (NEGF) transport. Our framework and analysis provide valuable insights into the design of n-type 2D MoS\u0000₂\u0000 FETs, including their gate leakage (I\u0000_GL\u0000), subthreshold swing (SS), and ON-current (I\u0000_ON\u0000), and they can be extended to optimize the design and performance of other 2D FETs. More specifically, we demonstrate that monolayer (1L-) and bilayer (2L-) LaOCl/HfO\u0000₂\u0000 are promising GD stacks to achieve IRDS required values for I\u0000_GL\u0000, SS, and I\u0000_ON\u0000 in n-type 2D FETs. Finally, we develop a framework to derive the design-window in terms of material/interface properties valid for both n-type and p-type 2D FETs and identify potential GD materials as a passivation/seeding layer across different L\u0000_g\u0000 for n-type 2D FETs. The results highlight LaOCl as a promising candidate for L\u0000_g\u0000 = 7 nm while several materials, including LaOCl and \u0000<italic>h</i>\u0000BN, are viable for L\u0000_g\u0000 = 10 nm.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"211-220"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Electron Devices Society Information","authors":"","doi":"10.1109/TMAT.2024.3469608","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3469608","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10772478","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial An Era of Surfaces","authors":"FRANCESCA IACOPI","doi":"10.1109/TMAT.2024.3486974","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3486974","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"iii-iv"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectrical Dynamic of Perovskite Solar Cells Under Perovskite and Electron Transport Layer Crystallinity Effect","authors":"Akrajas Ali Umar;P. Susthita Menon","doi":"10.1109/TMAT.2024.3501212","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3501212","url":null,"abstract":"This paper discusses a specific case regarding how the behavior of the perovskite lattice and the crystallinity properties of the electron transport layer (ETL) impact the photoelectrical dynamics in perovskite solar cells (PSCs). While many factors influence this photovoltaic process, including the properties of the perovskite layer, ETL, hole transport layer (HTL), and the interfacial properties between these components, the fundamental phenomena occurring within each layer are quite similar. By examining the properties of the perovskite layer and ETL, we can gain valuable insights into how they collectively influence the transport of photogenerated carriers in PSCs. This brief review aims to shed light on these key aspects, thus catalyzing efforts to enhance the performance of perovskite solar cells. Understanding the underlying dynamics at play will enable researchers to devise more targeted strategies to optimize PSCs, ultimately realizing their full potential in renewable energy applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"194-210"},"PeriodicalIF":0.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Future Materials for Beyond Si Integrated Circuits: A Perspective","authors":"Luigi Colombo;Salim El Kazzi;Mihaela Popovici;Gilles Delie;Dae Seon Kwon;Sean RC McMitchell;Christoph Adelmann","doi":"10.1109/TMAT.2024.3497835","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3497835","url":null,"abstract":"The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopted in recent decades to enhance the performance of Si integrated circuits. The imperative to uphold Moore's Law for both More Moore and More than Moore devices has driven the industry to study, and later introduce a plethora of materials and innovative processes into the Si fabrication process, spanning from the front-end-of-line (FEOL) to the back-end-of-line (BEOL). This concerted effort aims to bolster computing power and functionality while curbing costs. Scaling Si-channel transistors down to the nanometer level has presented formidable challenges. The emergence of new materials, such as two-dimensional materials like transition metal dichalcogenides, carbon nanotubes, and metal oxides holds promise for further scaling endeavors. With transistors and interconnects nearing their physical limits, these materials offer potential solutions by enabling the fabrication of high-performance devices without relying solely on Si, while integrated at lower thermal budgets. Moreover, these technologies can be repurposed in the BEOL to add extra functionality while reducing the overall device footprint. Recent breakthroughs, notably the successful demonstration of high-performance devices utilizing ALD metal oxides like In\u0000₂\u0000O\u0000₃\u0000, have sparked considerable excitement. Addressing the scaling challenges of interconnects is equally daunting. The quest for materials with lower resistivities than copper interconnects with reduced electromigration at scaled dimensions and efforts to eliminate or minimize barrier layers hold promise in mitigating RC time delay. Non-volatile memories, particularly ferroelectric-based memories, stand to be gained from advancements in materials science. Innovations in such materials as hafnates and enhanced integration techniques for perovskites through electrode stack engineering could facilitate the scaling of current ferroelectric memories. The ongoing introduction of new materials is poised to sustain scaling efforts and unlock novel functionalities in electronic devices for many years.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"178-193"},"PeriodicalIF":0.0,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}