IEEE Transactions on Materials for Electron Devices最新文献

Integrating Hybrid Supercapacitors With Batteries: Unravelling the Mechanism in Zn-I2/MnO2 Systems 集成混合超级电容器与电池：揭开锌- i2 /MnO2系统的机制

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-02-09 DOI: 10.1109/TMAT.2026.3662625

Zanxiang Nie;Guodong Fu;Kwun Nam Hui;Kwan San Hui;Pritesh Hiralal;Gehan A.J. Amaratunga;Yue Liu;Yaotang Zhong;Shiwei Liu;Shiqiang Luo

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Bottom Palladium Quasi-Ohmic Contact to Atomic Layer Deposited Zinc Tin Oxide Thin Film 底部钯准欧姆接触原子层沉积锌锡氧化薄膜

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-02-02 DOI: 10.1109/TMAT.2026.3660582

Tonglin L. Newsom;Jasper Scherz;Rebecca L. Peterson

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Self-Powered, Fast Response Quadruple Cation Perovskite Photodetector With Al2O3 Nanoparticles as Interfacial Modification Layer 以Al2O3纳米颗粒为界面修饰层的自供电、快速响应四重阳离子钙钛矿光电探测器

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-02-02 DOI: 10.1109/TMAT.2026.3659862

Surya Ketaraju;Naba Kumar Rana;Santu Mazumder;Nikhil Chander

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2025 Index IEEE Transactions on Materials for Electron Devices 电子器件材料学报

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-20 DOI: 10.1109/TMAT.2026.3654827

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Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19 用于病毒检测的可扩展CVD石墨烯场效应晶体管平台：在COVID-19中的应用

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-12 DOI: 10.1109/TMAT.2026.3653243

Leonardo Martini;Ylea Vlamidis;Ileana Armando;Domenica Convertino;Vaidotas Mišeikis;Valerio Voliani;Camilla Coletti

{"title":"Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19","authors":"Leonardo Martini;Ylea Vlamidis;Ileana Armando;Domenica Convertino;Vaidotas Mišeikis;Valerio Voliani;Camilla Coletti","doi":"10.1109/TMAT.2026.3653243","DOIUrl":"https://doi.org/10.1109/TMAT.2026.3653243","url":null,"abstract":"The rapid and global spread of coronavirus disease 2019 (COVID-19), caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), underscored the urgent need for fast, reliable, and adaptable diagnostic tools capable of responding to current and future viral threats. Early diagnosis is key to limiting transmission, and biosensors based on nanomaterials offer promising solutions for accurate and rapid bioanalyte detection. In this work, we present a scalable matrix of graphene-based field-effect transistors (GFETs) for the direct and rapid detection of the SARS-CoV-2 spike protein. High-quality graphene is functionalized in a single step with ACE2–His, enabling detection of the spike protein with a limit of detection as low as 1 fg/mL in phosphate-buffered saline (PBS). A robust statistical analysis, based on measurements from approximately 70 devices per analyte concentration, demonstrates the reproducibility and reliability of the platform. This label-free, scalable, and reproducible COVID-19 antigen sensor can be readily adapted to detect emerging SARS-CoV-2 variants or other viral pathogens, offering a flexible approach for future diagnostic applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"3 ","pages":"39-46"},"PeriodicalIF":0.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11347479","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146175737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of VS2/MXene Heterostructure Electrode-Based Micro-Supercapacitor for On-Chip Energy Source Applications 片上能量源用VS2/MXene异质结构电极微超级电容器的制备

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-01 Epub Date: 2026-04-16 DOI: 10.1109/TMAT.2026.3684739

Ashish Kumar Yadav;Jasil T K;Muhammed Anees P. K.;Nivedya Thathron;Ajith Kulangara Madam;Sib Sankar Mal;Partha Pratim Das;Sushil Kumar Pandey

{"title":"Fabrication of VS2/MXene Heterostructure Electrode-Based Micro-Supercapacitor for On-Chip Energy Source Applications","authors":"Ashish Kumar Yadav;Jasil T K;Muhammed Anees P. K.;Nivedya Thathron;Ajith Kulangara Madam;Sib Sankar Mal;Partha Pratim Das;Sushil Kumar Pandey","doi":"10.1109/TMAT.2026.3684739","DOIUrl":"https://doi.org/10.1109/TMAT.2026.3684739","url":null,"abstract":"Vanadium disulfide, a transition metal dichalcogenide, has emerged as a highly promising electrode material for next-generation micro-supercapacitors. In this study, the growth optimization of vanadium disulfide single crystals and films was performed using a chemical vapor deposition system by tuning different parameters such as growth temperature, precursor amount, and duration. Vanadium disulfide single crystals edge length of up to ˜330 μm were achieved at a growth temperature of 825°C, the largest crystals reported to date. Under similar conditions, textured thin films were also achieved by adjusting the argon carrier gas flow and precursor concentration. Atomic force microscopy confirmed a thickness of about 18 nm, indicating the formation of multilayer crystals. Density functional theory calculations revealed the metallic nature of the vanadium disulfide electrode adsorbed with sulfate ions, and a maximum quantum capacitance of 28 μF/cm2 at −0.5 V, indicating its suitability as an electrode for a supercapacitor. After material investigation, a vanadium disulfide electrode-based supercapacitor was fabricated using a metal mask-assisted technique. The prototype supercapacitor fabricated device demonstrates an areal capacitance of 41.16 mF/cm2, which further improved nearly sixfold to 250.3 mF/cm2 after incorporating an MXene layer above the vanadium disulfide electrode. The fabricated device has excellent capacitance retention of 88.9% during 1000 cycles of Galvanostatic Charge-Discharge at a current density of 0.5 mA/cm2. Our findings establish a link between synthesis conditions, material properties, and electrochemical performance, highlighting the potential for the commercialization of vanadium disulfide electrode-based micro-supercapacitors as on-chip energy sources.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"3 ","pages":"65-74"},"PeriodicalIF":0.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147828835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Combined Impedance Spectroscopy and Physical Characterization Unveils Kinetics of Ag Cations in the SET State of Ag/ZrOx:Al/Pt-RRAM With Variable Oxygen Vacancies 结合阻抗谱和物理表征揭示了具有可变氧空位的Ag/ZrOx:Al/Pt-RRAM在SET状态下Ag阳离子的动力学

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-01 Epub Date: 2026-04-20 DOI: 10.1109/TMAT.2026.3685954

Suman Gora;Mandeep Jangra;Deepak Yadav;Jay Singh;Monojit Bag;Arnab Datta

{"title":"Combined Impedance Spectroscopy and Physical Characterization Unveils Kinetics of Ag Cations in the SET State of Ag/ZrOx:Al/Pt-RRAM With Variable Oxygen Vacancies","authors":"Suman Gora;Mandeep Jangra;Deepak Yadav;Jay Singh;Monojit Bag;Arnab Datta","doi":"10.1109/TMAT.2026.3685954","DOIUrl":"https://doi.org/10.1109/TMAT.2026.3685954","url":null,"abstract":"Kinetics and complementary roles of Ag cations and oxygen vacancies to the formation of dual-conduction filament (dual-CF) in the SET state of an Al-doped ZrOx (ZrOx:Al)-based (Ag/ZrOx:Al/Pt) resistive random access memory (RRAM) have been investigated here. Al doping increased oxygen vacancies in ZrOx, which impacted diffusion and reduction of the injected Ag+ ions (from top contact) during the SET state of this RRAM. Detail impedance spectroscopy demonstrates faster Ag+ diffusion in a vacancy richer background, which was eventually tailored by Al doping. Traces of Ag in ZrOx:Al film was found through separate XPS and EDX characterization. Furthermore, a vacancy migration until the counter electrode (Pt) complemented the said Ag+ diffusion and reduction, which was corroborated by dielectric relaxation behaviour of Ag/ZrOx:Al/Pt RRAM for variable Al doped ZrOx. In this regard, dual-CF was assessed utilizing XPS, which revealed synergy between the field driven excess vacancies and O2− migration that led to phase transition in ZrOx (tetragonal to monoclinic) under the applied SET bias","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"3 ","pages":"75-81"},"PeriodicalIF":0.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147828929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

1 MeV Proton-Induced Damage in $beta $-Ga2O3 Schottky Barrier Diodes Under Forward Bias 正偏压下$beta $-Ga2O3肖特基势垒二极管的1 MeV质子致损伤

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-01 Epub Date: 2026-07-23 DOI: 10.1109/TMAT.2026.3716608

Jossue Montes;Junzhe Xie;Houqiang Fu;Yuji Zhao

引用次数: 0

Ultrathin β-Ga2O3 Thin Films for Oxide Heterostructure Transistors 用于氧化异质结构晶体管的超薄β-Ga2O3薄膜

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-01 Epub Date: 2026-06-25 DOI: 10.1109/TMAT.2026.3705978

Cheng-Lun Hsin;En-Lin Chen;Ruo-Yu Liu;Chia-Ying Wu;Chun-Wei Huang

引用次数: 0

Orientation-Dependent Heteroepitaxy and Growth-Mediated Stabilization of (111) Rutile GeO2 on Rutile TiO2 by MOCVD （111）金红石GeO2在金红石TiO2上的定向异质外延及MOCVD生长介导的稳定性

IEEE Transactions on Materials for Electron Devices Pub Date : 2026-01-01 Epub Date: 2026-08-03 DOI: 10.1109/TMAT.2026.3719571

Imteaz Rahaman;Botong Li;Hunter D. Ellis;Bobby G. Duersch;Kai Fu

{"title":"Orientation-Dependent Heteroepitaxy and Growth-Mediated Stabilization of (111) Rutile GeO2 on Rutile TiO2 by MOCVD","authors":"Imteaz Rahaman;Botong Li;Hunter D. Ellis;Bobby G. Duersch;Kai Fu","doi":"10.1109/TMAT.2026.3719571","DOIUrl":"https://doi.org/10.1109/TMAT.2026.3719571","url":null,"abstract":"Rutile GeO2 (r-GeO2) is a promising ultrawide bandgap semiconductor; however, achieving controlled epitaxial films remains challenging due to competing phases and growth kinetics. In this work, we demonstrate orientation-dependent growth of GeO2 films on rutile TiO2 substrates with (100), (110), (001), and (111) orientations using metal–organic chemical vapor deposition (MOCVD). Among the investigated orientations, the (111) surface supports the formation of continuous, predominantly r-GeO2 films with comparatively reduced surface roughness, whereas the (001) orientation also enables rutile phase formation but with higher roughness, and the other orientations showed mixed phases and non-uniform morphologies. Reducing growth pressure improves crystalline quality, with the rocking curve full width at half maximum (FWHM) decreasing from 1.86° to 0.396° at 300 and 80 Torr, respectively. A direct comparison between continuous and seed-driven stepwise crystallization (SDSC) growth indicates that the segmented growth pathway assists rutile-phase stabilization under the present MOCVD conditions, whereas continuous growth yields amorphous films. The resulting films exhibit continuous morphology with comparatively reduced roughness (∼23 nm) and remain stable after water treatment. Under the present high-temperature X-ray diffraction conditions, amorphous films show no detectable crystallization up to 950 °C, suggesting that crystallization is strongly influenced by growth-mediated conditions. These results offer guidelines for the controlled growth of (111)-oriented r-GeO2 films for ultrawide-bandgap semiconductor applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"3 ","pages":"92-96"},"PeriodicalIF":0.0,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148836612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0