IEEE Transactions on Materials for Electron Devices最新文献

Electrical and Reliability Study of GaN E-Mode MISHEMTs With Two-Step Etching Gate Recess 两步蚀刻栅极凹槽GaN e模MISHEMTs的电学及可靠性研究

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-09-04 DOI: 10.1109/TMAT.2025.3606438

Ziyi He;Dinusha Herath Mudiyanselage;Dawei Wang;Bingcheng Da;Junzhe Xie;Michel Khoury;Yuji Zhao;Houqiang Fu

{"title":"Electrical and Reliability Study of GaN E-Mode MISHEMTs With Two-Step Etching Gate Recess","authors":"Ziyi He;Dinusha Herath Mudiyanselage;Dawei Wang;Bingcheng Da;Junzhe Xie;Michel Khoury;Yuji Zhao;Houqiang Fu","doi":"10.1109/TMAT.2025.3606438","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3606438","url":null,"abstract":"In this paper, we developed a simple gate recess etching technique for the fabrication of GaN E-mode HEMT. A systematic comparison between the high-power etching and high-low-power etching gate recessed E-mode GaN HEMT has been carried out. The device with high-low power etching showed increased on-current, reduced gate leakage current and threshold voltage dispersion, and reduced hysteresis. The device with high-low power etching showed an improved interface between dielectric and recessed gate with an interface trap density of 1.2 × 1012 cm−2⋅eV−1 to 2.2 × 1012 cm−2⋅eV−1, which is about half of the value in the high power etching device. Gate step-stress testing and positive gate-bias stress testing showed an improved gate robustness, and reduced threshold voltage shift resulting from reduced SiNx/GaN interface traps for high-low-power etching MISHEMT. Time-dependent dielectric breakdown (TDDB) testing showed its increased gate voltage of 5 V for maintaining a 10-year lifetime compared to 4.5 V for the high-power etching device. This work demonstrated and analyzed an easy-to-implement approach for realizing high-performance low interface trap E-mode GaN MISHEMT.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"108-112"},"PeriodicalIF":0.0,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultrawide Bandgap AlN Trench Metal-Oxide-Semiconductor Transistors (MOSFETs) on Single-Crystal AlN Substrates 单晶AlN衬底上的超宽带隙AlN沟槽金属氧化物半导体晶体管（mosfet）

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-08-20 DOI: 10.1109/TMAT.2025.3601062

Bingcheng Da;Dinusha Herath Mudiyanselage;Dawei Wang;Ziyi He;Junzhe Xie;Houqiang Fu

引用次数: 0

Vat Photopolymerization of Al2O3/Borosilicate Glass Low Temperature Co-Fired Ceramic Substrates With Integrated Micropore Patterning Device Al2O3/硼硅酸盐玻璃低温共烧陶瓷基板的还原光聚合及集成微孔图图化装置

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-08-13 DOI: 10.1109/TMAT.2025.3598753

Yizhen Chu;Yujuan Zhou;Mingyong Jia;Qianshun Cui;Haiyuan Shi;Zhifeng Huang;Fei Chen

{"title":"Vat Photopolymerization of Al2O3/Borosilicate Glass Low Temperature Co-Fired Ceramic Substrates With Integrated Micropore Patterning Device","authors":"Yizhen Chu;Yujuan Zhou;Mingyong Jia;Qianshun Cui;Haiyuan Shi;Zhifeng Huang;Fei Chen","doi":"10.1109/TMAT.2025.3598753","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3598753","url":null,"abstract":"Low temperature co-fired ceramics (LTCC) have garnered significant attention due to their exceptional electrical and thermal properties. While the traditional tape casting method for preparing LTCC substrates yields high density, it is constrained by limited geometric freedom and a complex process, making it less suitable for contemporary demands. In this study, we employ vat photopolymerization 3D printing technology to fabricate alumina/borosilicate glass composite LTCC systems and introduce a microporous structure design on the substrate. This innovation simplifies the traditional punching step, enhancing both productivity and reliability. We formulated LTCC slurry suitable for vat photopolymerization and examined the thermal conductivity and dielectric properties of the sintered parts. The findings reveal that samples held at 750 °C for 30 minutes achieved the highest densities, exhibiting a thermal conductivity of 3.63 W·m−1·K−1, a relative dielectric constant of 13.09, and the lowest dielectric loss (7.9 × 10−3). We successfully realized microporous printing on LTCC substrates, achieving microporous structures with an actual diameter of 132 μm. Additionally, we verified the compatibility of substrates with silver co-firing, observing a robust bond between the silver layer and the LTCC layer. This study underscores the potential of vat photopolymerization for LTCC applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"95-102"},"PeriodicalIF":0.0,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144916326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

BEOL-Compatible 5.6 nm Ultrathin HZO With Molybdenum Nitride Electrode and IN2O3 Channel Devices for Enhanced Ferroelectricity and Reliability beol兼容5.6 nm超薄HZO与氮化钼电极和IN2O3通道器件增强铁电性和可靠性

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-07-07 DOI: 10.1109/TMAT.2025.3586809

Li-Cheng Teng;Yu-Che Huang;Shin-Yuan Wang;Yu-Hsien Lin;Chao-Hsin Chien

引用次数: 0

Call for Papers: Special Issue of IEEE Transactions on Electron Devices on Reliability of Advanced Nodes 论文征集：IEEE高级节点可靠性电子器件学报特刊

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-06-27 DOI: 10.1109/TMAT.2025.3583512

引用次数: 0

Tunable Density-of-States in Chromium Oxide Thin Films via Room Temperature Laser Ablation 室温激光烧蚀氧化铬薄膜的可调态密度

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-06-19 DOI: 10.1109/TMAT.2025.3581508

Angel Regalado-Contreras;Wencel de la Cruz

引用次数: 0

Transferable Freestanding Varactor Based on a Membrane Stack for Microwave Application 基于膜堆的可转移独立式变容管微波应用

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-06-17 DOI: 10.1109/TMAT.2025.3580484

Yating Ruan;Philipp Komissinskiy;Alexey Arzumanov;Holger Maune;Lambert Alff

{"title":"Transferable Freestanding Varactor Based on a Membrane Stack for Microwave Application","authors":"Yating Ruan;Philipp Komissinskiy;Alexey Arzumanov;Holger Maune;Lambert Alff","doi":"10.1109/TMAT.2025.3580484","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3580484","url":null,"abstract":"This work demonstrates the fabrication and characterization of a freestanding oxide varactor membrane designed for integration onto silicon substrates. An epitaxial varactor heterostructure composed of a 1% Mn-doped Ba<inline-formula><tex-math>$_{0.5}$</tex-math></inline-formula>Sr<inline-formula><tex-math>$_{0.5}$</tex-math></inline-formula>TiO<inline-formula><tex-math>$_{3}$</tex-math></inline-formula> dielectric layer and a <inline-formula><tex-math>$rm {SrMoO}_{3}$</tex-math></inline-formula> conductive layer was grown using pulsed laser deposition on a water-soluble sacrificial layer <inline-formula><tex-math>$rm {Sr_{3}Al_{2}O_{6}}$</tex-math></inline-formula>. After the lift-off process, the varactor heterostructure was successfully transferred onto a silicon substrate. Structural analysis confirms the high crystallinity and strain relaxation of the heterostructure after transfer. Electrical measurements reveal high tunability (<italic>n=1.7) at 120 V/<inline-formula><tex-math>$mu rm {m}$</tex-math></inline-formula>, a quality factor exceeding 100 at 1 MHz, and a low leakage current density well below 5 <inline-formula><tex-math>$text{A/m}^{2}$</tex-math></inline-formula>. This approach overcomes the challenges of direct oxide growth of epitaxial varactor heterostructures on silicon, such as lattice mismatch and chemical incompatibility. These results validate the potential of freestanding varactor membranes for agile microwave and RF applications, offering a scalable route for high-performance, multifunctional devices with low energy consumption in next-generation telecommunications and wireless networks.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"80-85"},"PeriodicalIF":0.0,"publicationDate":"2025-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11039081","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144557714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Performance of Yttrium Oxide-Based Memristor Through TiN Electrodes and Device Scaling for Neuromorphic and Pattern Recognition 基于TiN电极的氧化钇基忆阻器性能改进及神经形态和模式识别的器件缩放

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-06-13 DOI: 10.1109/TMAT.2025.3579714

Sanjay Kumar;Shalu Rani

{"title":"Improved Performance of Yttrium Oxide-Based Memristor Through TiN Electrodes and Device Scaling for Neuromorphic and Pattern Recognition","authors":"Sanjay Kumar;Shalu Rani","doi":"10.1109/TMAT.2025.3579714","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3579714","url":null,"abstract":"Herein, we present a CMOS-compatible fabrication process, in-depth materials, and electrical analysis of yttrium oxide (Y2O3)-based memristive devices having a device size of 100 μm2. The fabricated devices exhibit improved performance by incorporating TiN electrodes and device scaling and efficiently emulate the various low-power neuromorphic and pattern recognition tasks. The fabricated memristive devices exhibit stable bipolar resistive switching behavior with an excellent endurance beyond 50,000 cycles and retention properties exceeding 106 s by maintaining a very high ON/OFF ratio of 104. Additionally, the fabricated devices show remarkable stability in the device switching voltages under cycle-to-cycle (C2C) and device-to-device (D2D) wherein, the coefficient of variability (<italic>CV) in the device switching voltages in C2C and D2D is 4.95% and 11.39%, respectively. Moreover, the fabricated devices efficiently emulate the synaptic response by emulating potentiation, depression, paired-pulse facilitation (PPF), and paired-pulse depression (PPD) and also exhibit the device conductance tunability under the variations in the pulse width as similar to the biological synapse counterpart. Furthermore, the fabricated devices efficiently show the pattern recognition task by achieving an accuracy of 88.2% for the handwriting MNIST dataset. Therefore, the present work opens a new horizon in the field of miniaturized artificial synapses and neuromorphic computing to perform various operations.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"72-79"},"PeriodicalIF":0.0,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144524374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Call for Papers: Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic Applications 论文征集：用于射频、功率和光电应用的超宽带隙半导体器件

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-04-21 DOI: 10.1109/TMAT.2025.3562290

引用次数: 0

IEEE Electron Devices Society 电子器件学会

IEEE Transactions on Materials for Electron Devices Pub Date : 2025-04-17 DOI: 10.1109/TMAT.2025.3561623

引用次数: 0