IEEE Transactions on Materials for Electron Devices最新文献

Editorial An Era of Surfaces 社论一个表面的时代

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-11-25 DOI: 10.1109/TMAT.2024.3486974

FRANCESCA IACOPI

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Call for Nominations for Editor-in-Chief—IEEE Transactions on Semiconductor Manufacturing 征集《IEEE 半导体制造》杂志主编提名

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-11-05 DOI: 10.1109/TMAT.2024.3489232

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Advances in Flexible Electrotactile Devices for Restoration of Biomedical Haptic Sensation 用于恢复生物医学触觉的柔性电触觉设备的研究进展

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-10-17 DOI: 10.1109/TMAT.2024.3483174

Yunxia Jin;Zixiong Wu;Yusheng Zhang;Jiaming Qi;Chwee Teck Lim

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Off-Axis Electron Holography as a Tool for the Mapping of Electromagnetic Properties in the Semiconductor Industry 作为半导体工业电磁特性绘图工具的离轴电子全息技术

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-10-16 DOI: 10.1109/TMAT.2024.3482284

David Cooper;Victor Boureau;Trevor P. Almeida

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Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy 利用紫外光电子能谱测量碳结构的功函数

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-10-07 DOI: 10.1109/TMAT.2024.3475331

Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque

{"title":"Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy","authors":"Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque","doi":"10.1109/TMAT.2024.3475331","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3475331","url":null,"abstract":"The work function of carbon-based materials is crucial in understanding the electronic properties, offering critical insights for optimizing device performance and advancing electronic applications. The work function of diamond-like carbon (DLC), Q-carbon, and diamond is measured using ultraviolet photoelectron spectroscopy (UPS). Three DLC films having different sp\u00002\u0000/sp\u00003\u0000 content (I\u0000D\u0000/I\u0000G\u0000 ratios 0.43, 0.87, and 1.61) are grown using pulsed laser deposition, and the Q-carbon films are fabricated using subsequent pulsed laser annealing of the DLC films. Moreover, the diamond films are deposited using hot filament chemical vapor deposition (HFCVD). The compositional analysis of the films is performed using Raman spectroscopy, and the formation of Q-carbon is confirmed through Raman spectroscopy and scanning electron microscopic (SEM) analysis. The bandgap measurement using the Tauc plot demonstrates the bandgap of the DLC films to range from 2.56 eV to 3.77 eV, while the bandgap of Q-carbon is measured to be 3.7 eV. The work function measurement reveals the values to range from 3.91 eV to 4.18 eV for the DLC films. Additionally, the work function of Q-carbon is calculated to be 3.82 eV from experimental measurements, while the DFT simulations provide a value of 3.62 eV. Finally, the diamond film's work function is measured at 4.54 eV. Overall, the results reveal insights into the relationship between structural characteristics and work function, providing valuable information for optimizing the performance of these materials in electronic and optoelectronic technologies.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"121-125"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Editorial A Quick History of Modern Electronics and the Role of Materials, Processes and Interfaces 社论现代电子学简史以及材料、工艺和界面的作用

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-30 DOI: 10.1109/TMAT.2024.3428948

Paolo A. Gargini

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Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials 纳米级限制对低介电混合有机硅酸盐材料结构影响的计算分析

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-20 DOI: 10.1109/TMAT.2024.3446740

Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt

{"title":"Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials","authors":"Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt","doi":"10.1109/TMAT.2024.3446740","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3446740","url":null,"abstract":"Emerging interconnect technologies with increased performance of microchips necessitate the reliable integration of ultra-low-k dielectrics such as hybrid organosilicate glasses (OSG) as insulating units to prevent crosstalk. However, obtaining nanoscale trench patterns densely filled with low-k dielectrics has been challenging as the feature sizes become smaller. Several studies report on the formation of undesired low-density regions within the low-k dielectric decreasing device reliability and preventing easy scalability. With the help of molecular dynamics simulations, we developed computational modeling strategies where we explore the role of OSG precursor structure and the OSG precursor-trench interaction on the formation of low-density regions and final morphology of the low-k filling under confinement. Our goal is to ultimately provide guidance for the experimental efforts for precursor selection to control the formation of low-density regions to enhance mechanical reliability. Our simulation results show that cyclic and hyperconnected 1,3,5-benzene precursor molecules can pack in a relatively more homogeneous fashion under nanoscale confinement compared to more conventionally connected ethylene bridged Et-OCS molecules. The molecular geometry and crosslinking of hyperconnected 1,3,5-benzene precursors can help reduce the formation of low-density regions and lead to better connectivity of the filling material formed under nanoconfinement; thereby yielding improved elastic and fracture properties.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"82-89"},"PeriodicalIF":0.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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MXene-Contacted Carbon Nanotube Thin-Film Transistors Using Aerosol Jet Printing 利用气溶胶喷射打印技术实现与 MXene 接触的碳纳米管薄膜晶体管

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-15 DOI: 10.1109/TMAT.2024.3443753

Baiyu Zhang;Hansel A. Hobbie;Yizhang Wu;Wubin Bai;Aaron D. Franklin

{"title":"MXene-Contacted Carbon Nanotube Thin-Film Transistors Using Aerosol Jet Printing","authors":"Baiyu Zhang;Hansel A. Hobbie;Yizhang Wu;Wubin Bai;Aaron D. Franklin","doi":"10.1109/TMAT.2024.3443753","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3443753","url":null,"abstract":"MXenes have garnered significant attention for electronics applications due to their facile synthesis, tunable properties, and exceptional optical and electrical characteristics. Their stable aqueous suspension without additional surfactants enables compatibility of MXenes with various low-cost, additive manufacturing techniques, including spin coating, spraying, and direct-write printing. In this work, we investigate the aerosol jet printing of water-based Ti\u00003\u0000C\u00002\u0000T\u0000<italic>x\u0000 MXene on surfaces with different wettability, achieving printed thin films with sheet resistance as low as ∼7 Ω/□ within three printing passes on both hydrophilic and hydrophobic substrates. Furthermore, we present MXene-contacted carbon nanotube thin-film transistors (CNT-TFTs) with various device geometries, finding a tradeoff between on- and off-state performance when selecting between bottom and top contacts, respectively. Devices with MXene contacts exhibited performance (on-state current up to 16.9 μA/mm and on/off-current ratio of 10\u00006\u0000) comparable to printed CNT-TFTs contacted by graphene and silver nanowires; meanwhile, the lower unit price of MXene ink makes it a more attractive candidate for low-cost, large-area fabrication.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"90-96"},"PeriodicalIF":0.0,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Additive Manufacturing Materials and Processes for Passive Electronics in Wireless Communication 用于无线通信无源电子器件的快速成型制造材料和工艺

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-08 DOI: 10.1109/TMAT.2024.3440889

Manh Dat Nguyen;Zhiwei Yin;Rafael Del Rey;Francesca Iacopi;Yang Yang

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On the Thickness Scaling of Ferroelectric Hafnia 论铁电哈夫纳的厚度缩放

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-07-05 DOI: 10.1109/TMAT.2024.3423665

Suzanne Lancaster;Stefan Slesazeck;Thomas Mikolajick

引用次数: 0