{"title":"beol兼容5.6 nm超薄HZO与氮化钼电极和IN2O3通道器件增强铁电性和可靠性","authors":"Li-Cheng Teng;Yu-Che Huang;Shin-Yuan Wang;Yu-Hsien Lin;Chao-Hsin Chien","doi":"10.1109/TMAT.2025.3586809","DOIUrl":null,"url":null,"abstract":"In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5.6 nm HZO and ultrathin In<sub>2</sub>O<sub>3</sub> back gate devices in a back-end-of-line (BEOL) compatible process. By proposing a novel atomic layer deposition (ALD) scheme and an alternative bottom electrode treatment, the MoN-HZO sample shows an average 2Pr value of 64 μC/cm<sup>2</sup> (with a standard deviation of 0.52) and high endurance (△2Pr/2Pr<sub>pristine</sub> ≈2% from pristine to 10<sup>10</sup> cycles). The MoN–HZO stack integrated with an ultrathin In<sub>2</sub>O<sub>3</sub> back gate exhibits a memory window (MW) greater than 2.5 V and excellent endurance and data retention characteristics. With a maximum process temperature of 400°C, our approach meets the stringent requirements for Back-End-of-Line (BEOL) integration.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"90-94"},"PeriodicalIF":0.0000,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"BEOL-Compatible 5.6 nm Ultrathin HZO With Molybdenum Nitride Electrode and IN2O3 Channel Devices for Enhanced Ferroelectricity and Reliability\",\"authors\":\"Li-Cheng Teng;Yu-Che Huang;Shin-Yuan Wang;Yu-Hsien Lin;Chao-Hsin Chien\",\"doi\":\"10.1109/TMAT.2025.3586809\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5.6 nm HZO and ultrathin In<sub>2</sub>O<sub>3</sub> back gate devices in a back-end-of-line (BEOL) compatible process. By proposing a novel atomic layer deposition (ALD) scheme and an alternative bottom electrode treatment, the MoN-HZO sample shows an average 2Pr value of 64 μC/cm<sup>2</sup> (with a standard deviation of 0.52) and high endurance (△2Pr/2Pr<sub>pristine</sub> ≈2% from pristine to 10<sup>10</sup> cycles). The MoN–HZO stack integrated with an ultrathin In<sub>2</sub>O<sub>3</sub> back gate exhibits a memory window (MW) greater than 2.5 V and excellent endurance and data retention characteristics. With a maximum process temperature of 400°C, our approach meets the stringent requirements for Back-End-of-Line (BEOL) integration.\",\"PeriodicalId\":100642,\"journal\":{\"name\":\"IEEE Transactions on Materials for Electron Devices\",\"volume\":\"2 \",\"pages\":\"90-94\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Materials for Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11072360/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Materials for Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/11072360/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
BEOL-Compatible 5.6 nm Ultrathin HZO With Molybdenum Nitride Electrode and IN2O3 Channel Devices for Enhanced Ferroelectricity and Reliability
In this letter, we have successfully fabricated a metal-ferroelectricity-metal (MFM) capacitor of an ultrathin 5.6 nm HZO and ultrathin In2O3 back gate devices in a back-end-of-line (BEOL) compatible process. By proposing a novel atomic layer deposition (ALD) scheme and an alternative bottom electrode treatment, the MoN-HZO sample shows an average 2Pr value of 64 μC/cm2 (with a standard deviation of 0.52) and high endurance (△2Pr/2Prpristine ≈2% from pristine to 1010 cycles). The MoN–HZO stack integrated with an ultrathin In2O3 back gate exhibits a memory window (MW) greater than 2.5 V and excellent endurance and data retention characteristics. With a maximum process temperature of 400°C, our approach meets the stringent requirements for Back-End-of-Line (BEOL) integration.
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