IEEE Transactions on Materials for Electron Devices最新文献

{"title":"Wide Band Gap Semiconductors for Automotive Applications Call for Papers","authors":"","doi":"10.1109/TMAT.2025.3529277","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529277","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844544","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Papers: Special Issue on Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices: From Material to System-Level Applications","authors":"","doi":"10.1109/TMAT.2025.3529352","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529352","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844545","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue on:","authors":"","doi":"10.1109/TMAT.2025.3529353","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529353","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10844543","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142993023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2024 Index IEEE Transactions on Materials for Electron Devices Vol. 1","authors":"","doi":"10.1109/TMAT.2025.3529194","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3529194","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"222-229"},"PeriodicalIF":0.0,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10841915","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modulation Acceptor-Doping as an Alternative to Classical P-Type Impurity Doping for Silicon","authors":"Soundarya Nagarajan;Ingmar Ratschinski;Stefan Schmult;Thomas Mikolajick;Daniel Hiller;Jens Trommer","doi":"10.1109/TMAT.2025.3615888","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3615888","url":null,"abstract":"The statistical nature of impurity dopants introduced in a semiconductor leads to variability in electrical properties, posing significant challenges to device performance. This randomness becomes especially problematic as device dimensions shrink. Alternative approaches for material modification that offer precise control over the material properties, including predictable behavior at low temperatures, are essential for large-scale device integration. Modulation acceptor doping in <inline-formula><tex-math>$SiO_{2}$</tex-math></inline-formula> was introduced as a nanoscale-doping alternative to classical impurity doping for silicon, where the carriers are spatially isolated from the dopants, resulting in a drastically reduced Coulomb scattering within silicon. In this work, the stability of the new doping method in ambient conditions is assessed. Further, a comparative analysis of impurity (p-type) doped and modulation acceptor doped Hall structures is presented. The modulation doped sample series reveals a consistent resistivity and a stable carrier density. While, the impurity-doped sample series demonstrates a lower dopant activation efficiency, higher resistivity and highlights the statistical nature of the classical method. In addition, the temperature behaviour of resistivity is studied from 300 K down to 100 K.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"120-125"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148463170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Device Engineering of a Novel Label-Free Carbon and Double Gate-Based Sensor for PoC Diagnosis of Neural Diseases Through Dopamine and Serotonin Sensing","authors":"Deepti;Anirban Kolay;Subrata Majumder;Amitesh Kumar","doi":"10.1109/TMAT.2025.3616978","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3616978","url":null,"abstract":"The manuscript discusses low-cost, rapid and diagnostic detection of dopamine and serotonin, whose abnormal levels lead to numerous neurological disabilities like Schizophrenia, Parkinson’s disease, Huntington’s disease and Alzheimer’s disease. In this present work, simulation of three different proposed structures has been demonstrated for the detection of biomolecules: (a) amorphous carbon sensing material-based dopamine detection sensor, (b) graphite sensing material-based serotonin detection sensor, and (c) double-gate FET structure for dopamine detection sensor. The cavities of amorphous carbon-based and graphite-based biosensors are expanded to 20 nm for better sensitivity. The amorphous carbon-based and graphite-based biosensors can detect dopamine and serotonin concentrations as low as 1.33 fM, respectively. In previous literature, an experimental electrochemical study has been done using 3-electrode set-up using amorphous carbon coated pencil graphite electrode as working electrode for dopamine detection. The results of an experimental electrochemical study are validated with the suggested amorphous carbon-based and graphite-based biosensors’ sensitivity to various dopamine and serotonin concentrations. The sensing materials employed in this study: amorphous carbon and graphite are both readily available and cost-effective. Additionally, from the discussion it has been observed that the proposed devices exhibit significantly different sensitivity levels compared to existing designs. A novel double gate FET structure device has been also proposed for detecting dopamine by introducing cavities in Hafnium dioxide so that biomolecules present in those cavities can be sensed by observing change in the drain current. The previous published work has been compared to the suggested detection method. Dopamine and serotonin are the neurotransmitters that are essential to the human body’s neurological, hormonal and renal systems, hence these proposed approaches can be utilized for point of care diagnosis.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"126-134"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148463559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical Non-Volatile Memory Based on MnO2 Electrochromic Windows","authors":"Dilan M. Gamachchi;Indeewari M. Karunarathne;Andrew C. Meng","doi":"10.1109/TMAT.2025.3635599","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3635599","url":null,"abstract":"Electrochemical non-volatile memory (NVM) devices are promising for neuromorphic computing applications due to their low power consumption and multi-functionality. We report a novel electrochemical NVM device based on reversible MnO₂ electrodeposition and dissolution that exhibits two distinct resistance states and multiple optical states. The device shows stable resistance states without any degradation for more than 500 cycles with more than 1 year data retention and capability for long-term device operation. UV-Vis absorption spectra through electrodeposited MnO₂ of different thicknesses demonstrate multiple optical states achieved through resistance changes in a photoresistor. The device shows excellent reversibility in electrical conductivity and optical absorption states between dissolution and deposition. Additionally, the device can demonstrate uni-polar potentiation and depression that closely resembles the gradual, tunable synaptic response of biological neurons.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"135-144"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148464078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"H-Plasma Treated ZrO2 and HfO2 RRAM Devices for Low Power In-Memory Computing","authors":"Aseel Zeinati;Durga Misra;Dina H. Triyoso;Kandabara Tapily;Robert D. Clark;Sarah Lynch;Cory S. Wajda;Gert J. Leusink","doi":"10.1109/TMAT.2025.3635585","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3635585","url":null,"abstract":"This work investigates the impact of hydrogen plasma-treated ZrO_{<roman>2</roman>} and HfO_{<roman>2</roman>} (midpoint of deposition) as the switching layer dielectrics in resistive random-access memory (RRAM) devices. Results show that devices incorporating treated ZrO_{<roman>2</roman>} require significantly lower initial forming power (0.46 nW) compared to those with treated HfO_{<roman>2</roman>} (3.8 nW). Both devices exhibit multi-level cell (MLC) behavior under two pulsed operation schemes: one with linearly increasing pulse widths and another with exponentially increasing pulse widths to enhance the separation between successive conductance states. Despite the structural similarities between ZrO_{<roman>2</roman>} and HfO_{<roman>2</roman>}, the devices demonstrate distinct variation in electrical characteristics. To elucidate these differences, we compare their electron affinities and Gibbs free energies, examining how these material properties influence oxygen vacancy (V^o) generation an essential mechanism in RRAM switching. Endurance testing up to 4000 cycles indicates that treated HfO_{<roman>2</roman>} devices exhibit greater stability under electrical stress. Fitting analysis of the low resistance state (LRS) suggests that the treated HfO_{<roman>2</roman>} device support an Ohmic conduction mechanism, whereas the treated ZrO_{<roman>2</roman>} device is supporting space-charge-limited current (SCLC) behavior based on the log(I)-log(v) curves. Furthermore, TEM analysis of the fresh devices reveals a higher oxygen content and lower nitrogen concentration in treated ZrO_{<roman>2</roman>}, which may account for its lower forming power.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"145-150"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148464607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Utilizing Native Defect Engineering and Doping in BaTiO3 to Foster the Development of Memristive Devices Through First-Principles Calculations","authors":"Vikash Mishra;M. Julie Therese;Shashi Pandey;Tejendra Dixit","doi":"10.1109/TMAT.2025.3610406","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3610406","url":null,"abstract":"BaTiO₃ (BTO) is a promising candidate for multi-functional memristive devices, exhibiting outstanding ferroelectric behaviour and a high resistance contrast. The modulation of resistive switching in BTO is significantly influenced by doping and native-defect incorporation. In order to comprehend the effect of orbital engineering on the electronic properties and transport mechanisms of the BTO system for memristive applications, systematic density-functional-theory (DFT) investigations have been conducted on a variety of potential vacancies and doping on the A- and B-sites of BTO. In the case of vacancy-induced BTO, the electronic bandgap is evidently caused by an improvement in the overlapping of the O-2p and the Ti-3d orbitals, indicating these two orbitals are re-hybridizing. The establishment of conductive filaments and the associated charge conduction can be accurately predicted by analysing the formation energy, charge density, orbital splitting energy, and partial density-of-states. The results of this study demonstrate that a theoretical approach can be employed to investigate the defect states of systems such as transition metal oxides-based complex perovskites for memristive applications, especially utilizing the orbital degree-of-freedom.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"113-119"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148463414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Guest Editorial: Special Section on Exploration of the Exciting World of Multifunctional Oxide-Based Electronic Devices","authors":"Sourav De","doi":"10.1109/TMAT.2025.3639846","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3639846","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"5-6"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11301023","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148464648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}