IEEE Transactions on Materials for Electron Devices最新文献

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Analog-Based Synapse of Double HfZrO2 Ferroelectric FETs With Homogeneous Phase by Superlattice HfO2-ZrO2 Toward Energy Efficient Accelerator 通过超晶格 HfO2-ZrO2 实现具有同质相的双 HfZrO2 铁电场效应晶体管的模拟突触，从而实现高能效加速器

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-03-22 DOI: 10.1109/TMAT.2024.3393431

Z.-F. Lou;A. Senapati;J.-Y. Lee;F.-S. Chang;K.-Y. Hsiang;Y.-T. Chang;C. W. Liu;S. Maikap;M. H. Lee

{"title":"Analog-Based Synapse of Double HfZrO2 Ferroelectric FETs With Homogeneous Phase by Superlattice HfO2-ZrO2 Toward Energy Efficient Accelerator","authors":"Z.-F. Lou;A. Senapati;J.-Y. Lee;F.-S. Chang;K.-Y. Hsiang;Y.-T. Chang;C. W. Liu;S. Maikap;M. H. Lee","doi":"10.1109/TMAT.2024.3393431","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3393431","url":null,"abstract":"Since the analog-based energy-efficient accelerator for synapses is highly demanded in the artificial intelligence (AI) era, the homogeneous and coherence ferroelectric phase of HfZrO\u00002\u0000 (HZO) by superlattice (SL) growth mode with double layers is proposed in this work. The experimental results demonstrate excellent linear alternating consecutive potentiation and depression conductance (α\u0000p\u0000/α\u0000d\u0000 = −0.85/0.63) with V\u0000RMS\u0000 = 3 V. In addition, the proposed SL technique for HZOs validates the ferroelectric-based orthorhombic phase (o-phase) 75–79% by geometric phase analysis (GPA) compared to the solid-solution process for 62–64%. The double HZO (D-HZO) structure is employed for diverse coercive field (E\u0000C\u0000) distributions to exhibit multistate data storage with 8 identical gap V\u0000T\u0000. The SL-DHZO has a sufficient ferroelectric domain, which is crucial to achieving the requirements of analog-based energy-efficient accelerators for synapses in computing in-memory generation.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"11-14"},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141084864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes 硅烯在纳米技术中的应用：从晶体管到可弯曲薄膜

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-03-17 DOI: 10.1109/TMAT.2024.3394400

Carlo Grazianetti;Alessandro Molle;Christian Martella

{"title":"Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes","authors":"Carlo Grazianetti;Alessandro Molle;Christian Martella","doi":"10.1109/TMAT.2024.3394400","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3394400","url":null,"abstract":"Two-dimensional (2D) materials are today potential candidates for next generation ultra-scaled devices. After the boost provided by graphene, the 2D materials family is still quickly expanding and it is now clear that their properties may suit specific target applications but not all of them as originally expected by device engineers. Among them, a silicon-based 2D material, i.e., silicene, might represent the last frontier of the long shrinking journey of silicon throughout the semiconductor roadmap. Here, we review two applications based on the integration of silicene in field-effect transistors and bendable membranes, demonstrating that, with carefully engineered processes, silicene can be used in specific nanotechnology applications. We then briefly introduce other Xenes, the 2D materials family composed of single-element graphene-like lattices whose silicene is the frontrunner, and finally we provide an outlook on the future improvements to overcome the current roadblocks (large-scale growth and device standardization) towards a lab-to-fab transition towards Xenes integration into the silicon-based complementary metal-oxide-semiconductor technology.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"1-10"},"PeriodicalIF":0.0,"publicationDate":"2024-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10533695","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141068972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Transactions on Materials for Electron Devices IEEE电子器件材料汇刊

IEEE Transactions on Materials for Electron Devices Pub Date : 2023-10-05 DOI: 10.1109/TMAT.2023.3321929

引用次数: 0

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