IEEE Transactions on Materials for Electron Devices最新文献_第3页

Off-Axis Electron Holography as a Tool for the Mapping of Electromagnetic Properties in the Semiconductor Industry 作为半导体工业电磁特性绘图工具的离轴电子全息技术

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-10-16 DOI: 10.1109/TMAT.2024.3482284

David Cooper;Victor Boureau;Trevor P. Almeida

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Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy 利用紫外光电子能谱测量碳结构的功函数

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-10-07 DOI: 10.1109/TMAT.2024.3475331

Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque

{"title":"Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy","authors":"Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque","doi":"10.1109/TMAT.2024.3475331","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3475331","url":null,"abstract":"The work function of carbon-based materials is crucial in understanding the electronic properties, offering critical insights for optimizing device performance and advancing electronic applications. The work function of diamond-like carbon (DLC), Q-carbon, and diamond is measured using ultraviolet photoelectron spectroscopy (UPS). Three DLC films having different sp\u00002\u0000/sp\u00003\u0000 content (I\u0000D\u0000/I\u0000G\u0000 ratios 0.43, 0.87, and 1.61) are grown using pulsed laser deposition, and the Q-carbon films are fabricated using subsequent pulsed laser annealing of the DLC films. Moreover, the diamond films are deposited using hot filament chemical vapor deposition (HFCVD). The compositional analysis of the films is performed using Raman spectroscopy, and the formation of Q-carbon is confirmed through Raman spectroscopy and scanning electron microscopic (SEM) analysis. The bandgap measurement using the Tauc plot demonstrates the bandgap of the DLC films to range from 2.56 eV to 3.77 eV, while the bandgap of Q-carbon is measured to be 3.7 eV. The work function measurement reveals the values to range from 3.91 eV to 4.18 eV for the DLC films. Additionally, the work function of Q-carbon is calculated to be 3.82 eV from experimental measurements, while the DFT simulations provide a value of 3.62 eV. Finally, the diamond film's work function is measured at 4.54 eV. Overall, the results reveal insights into the relationship between structural characteristics and work function, providing valuable information for optimizing the performance of these materials in electronic and optoelectronic technologies.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"121-125"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Editorial A Quick History of Modern Electronics and the Role of Materials, Processes and Interfaces 社论现代电子学简史以及材料、工艺和界面的作用

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-30 DOI: 10.1109/TMAT.2024.3428948

Paolo A. Gargini

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Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials 纳米级限制对低介电混合有机硅酸盐材料结构影响的计算分析

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-20 DOI: 10.1109/TMAT.2024.3446740

Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt

{"title":"Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials","authors":"Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt","doi":"10.1109/TMAT.2024.3446740","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3446740","url":null,"abstract":"Emerging interconnect technologies with increased performance of microchips necessitate the reliable integration of ultra-low-k dielectrics such as hybrid organosilicate glasses (OSG) as insulating units to prevent crosstalk. However, obtaining nanoscale trench patterns densely filled with low-k dielectrics has been challenging as the feature sizes become smaller. Several studies report on the formation of undesired low-density regions within the low-k dielectric decreasing device reliability and preventing easy scalability. With the help of molecular dynamics simulations, we developed computational modeling strategies where we explore the role of OSG precursor structure and the OSG precursor-trench interaction on the formation of low-density regions and final morphology of the low-k filling under confinement. Our goal is to ultimately provide guidance for the experimental efforts for precursor selection to control the formation of low-density regions to enhance mechanical reliability. Our simulation results show that cyclic and hyperconnected 1,3,5-benzene precursor molecules can pack in a relatively more homogeneous fashion under nanoscale confinement compared to more conventionally connected ethylene bridged Et-OCS molecules. The molecular geometry and crosslinking of hyperconnected 1,3,5-benzene precursors can help reduce the formation of low-density regions and lead to better connectivity of the filling material formed under nanoconfinement; thereby yielding improved elastic and fracture properties.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"82-89"},"PeriodicalIF":0.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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MXene-Contacted Carbon Nanotube Thin-Film Transistors Using Aerosol Jet Printing 利用气溶胶喷射打印技术实现与 MXene 接触的碳纳米管薄膜晶体管

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-15 DOI: 10.1109/TMAT.2024.3443753

Baiyu Zhang;Hansel A. Hobbie;Yizhang Wu;Wubin Bai;Aaron D. Franklin

{"title":"MXene-Contacted Carbon Nanotube Thin-Film Transistors Using Aerosol Jet Printing","authors":"Baiyu Zhang;Hansel A. Hobbie;Yizhang Wu;Wubin Bai;Aaron D. Franklin","doi":"10.1109/TMAT.2024.3443753","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3443753","url":null,"abstract":"MXenes have garnered significant attention for electronics applications due to their facile synthesis, tunable properties, and exceptional optical and electrical characteristics. Their stable aqueous suspension without additional surfactants enables compatibility of MXenes with various low-cost, additive manufacturing techniques, including spin coating, spraying, and direct-write printing. In this work, we investigate the aerosol jet printing of water-based Ti\u00003\u0000C\u00002\u0000T\u0000<italic>x\u0000 MXene on surfaces with different wettability, achieving printed thin films with sheet resistance as low as ∼7 Ω/□ within three printing passes on both hydrophilic and hydrophobic substrates. Furthermore, we present MXene-contacted carbon nanotube thin-film transistors (CNT-TFTs) with various device geometries, finding a tradeoff between on- and off-state performance when selecting between bottom and top contacts, respectively. Devices with MXene contacts exhibited performance (on-state current up to 16.9 μA/mm and on/off-current ratio of 10\u00006\u0000) comparable to printed CNT-TFTs contacted by graphene and silver nanowires; meanwhile, the lower unit price of MXene ink makes it a more attractive candidate for low-cost, large-area fabrication.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"90-96"},"PeriodicalIF":0.0,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Additive Manufacturing Materials and Processes for Passive Electronics in Wireless Communication 用于无线通信无源电子器件的快速成型制造材料和工艺

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-08-08 DOI: 10.1109/TMAT.2024.3440889

Manh Dat Nguyen;Zhiwei Yin;Rafael Del Rey;Francesca Iacopi;Yang Yang

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On the Thickness Scaling of Ferroelectric Hafnia 论铁电哈夫纳的厚度缩放

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-07-05 DOI: 10.1109/TMAT.2024.3423665

Suzanne Lancaster;Stefan Slesazeck;Thomas Mikolajick

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50 Years of Reactive Ion Etching in Microelectronics 反应离子蚀刻在微电子领域的 50 年发展历程

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-07-01 DOI: 10.1109/TMAT.2024.3420822

Sergey Voronin;Christophe Vallée

引用次数: 0

The HRDL Interposer Technology Using Metal/Polymer Hybrid Bonding and Its Characteristics 使用金属/聚合物混合键合的 HRDL 互连技术及其特点

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-06-21 DOI: 10.1109/TMAT.2024.3417888

Yu-Lun Liu;Chien-Kang Hsiung;Tzu-Han Sun;Chun-Ta Li;Yuan-Chiu Huang;Yu-Tao Yang;Kuan-Neng Chen

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Thermogalvanic Harvesting With Thin-Film Li-Ion Materials: Experimental Reflections on Device Concepts 薄膜锂离子材料的热电偶收集：设备概念的实验反思

IEEE Transactions on Materials for Electron Devices Pub Date : 2024-06-18 DOI: 10.1109/TMAT.2024.3416156

Liese B. Hubrechtsen;Philippe M. Vereecken;Louis L. De Taeye

{"title":"Thermogalvanic Harvesting With Thin-Film Li-Ion Materials: Experimental Reflections on Device Concepts","authors":"Liese B. Hubrechtsen;Philippe M. Vereecken;Louis L. De Taeye","doi":"10.1109/TMAT.2024.3416156","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3416156","url":null,"abstract":"The Internet-of-Things (IoT) will require innovative solutions to enable power autonomy in miniaturized nodes. One possible strategy for these applications is to harvest energy using the thermogalvanic effect, which converts heat to electricity via an electrochemical reaction. In this work, three device concepts for thermogalvanic harvesting with thin-film Li-ion materials were considered, and a practical experiment demonstrating the operational limitations was presented for each approach. All demonstrations were executed using thin-film Li\u0000<inline-formula><tex-math>$_{4}$</tex-math></inline-formula>\u0000Ti\u0000<inline-formula><tex-math>$_{5}$</tex-math></inline-formula>\u0000O\u0000<inline-formula><tex-math>$_{12}$</tex-math></inline-formula>\u0000 (LTO) electrodes, which possess attractive thermogalvanic and kinetic properties. The first device concept was a thermogalvanic cell. This component harvests energy via the application and removal of a temperature difference between two identical LTO electrodes. In addition, a hybrid Thermally Regenerative Electrochemical Cycling (TREC) device was studied. Here, a cell with an LTO working electrode of variable temperature and a Li metal counter-electrode at constant temperature is charged at one LTO temperature and discharged at another temperature. The last concept was a thin-film TREC cell, which contains an LTO working electrode, a LiPON solid electrolyte, and a Li metal counter-electrode. Harvesting is accomplished by changing the temperature of the entire cell between the charge and discharge steps. By presenting an overview of the advantages and pitfalls of different device concepts, this work is a first step in the development of novel thermogalvanic harvesting components based on thin-film Li-ion materials.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"68-81"},"PeriodicalIF":0.0,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142091008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0