IEEE Transactions on Materials for Electron Devices最新文献

{"title":"Future Materials for Beyond Si Integrated Circuits: A Perspective","authors":"Luigi Colombo;Salim El Kazzi;Mihaela Popovici;Gilles Delie;Dae Seon Kwon;Sean RC McMitchell;Christoph Adelmann","doi":"10.1109/TMAT.2024.3497835","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3497835","url":null,"abstract":"The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopted in recent decades to enhance the performance of Si integrated circuits. The imperative to uphold Moore's Law for both More Moore and More than Moore devices has driven the industry to study, and later introduce a plethora of materials and innovative processes into the Si fabrication process, spanning from the front-end-of-line (FEOL) to the back-end-of-line (BEOL). This concerted effort aims to bolster computing power and functionality while curbing costs. Scaling Si-channel transistors down to the nanometer level has presented formidable challenges. The emergence of new materials, such as two-dimensional materials like transition metal dichalcogenides, carbon nanotubes, and metal oxides holds promise for further scaling endeavors. With transistors and interconnects nearing their physical limits, these materials offer potential solutions by enabling the fabrication of high-performance devices without relying solely on Si, while integrated at lower thermal budgets. Moreover, these technologies can be repurposed in the BEOL to add extra functionality while reducing the overall device footprint. Recent breakthroughs, notably the successful demonstration of high-performance devices utilizing ALD metal oxides like In\u0000₂\u0000O\u0000₃\u0000, have sparked considerable excitement. Addressing the scaling challenges of interconnects is equally daunting. The quest for materials with lower resistivities than copper interconnects with reduced electromigration at scaled dimensions and efforts to eliminate or minimize barrier layers hold promise in mitigating RC time delay. Non-volatile memories, particularly ferroelectric-based memories, stand to be gained from advancements in materials science. Innovations in such materials as hafnates and enhanced integration techniques for perovskites through electrode stack engineering could facilitate the scaling of current ferroelectric memories. The ongoing introduction of new materials is poised to sustain scaling efforts and unlock novel functionalities in electronic devices for many years.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"178-193"},"PeriodicalIF":0.0,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Nominations for Editor-in-Chief—IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TMAT.2024.3489232","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3489232","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10742964","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142587635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a Flexible Armalcolite/PDMS Sensing Device With Machine Learning for Physiological Temperature Monitoring","authors":"Ashis Tripathy;Ashok Mondal;Priyaranjan Sharma;Kamrul Hassan","doi":"10.1109/TMAT.2024.3489492","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3489492","url":null,"abstract":"The ceramic material based skin-attachable wearable sensing device, integrated with artificial intelligence technology, plays a crucial role in real-time temperature monitoring for health-care and disease diagnosis. However, a few unavoidable drawbacks of ceramic materials such as congenital brittleness, toxicity, low biocompatibility, long response and recovery times, poor sensitivity, and hysteresis prevent them from being used in various advanced applications. Therefore, in this research work, a highly sensitive skin-attachable Armalcolite/PDMS-based flexible temperature sensor is fabricated by using a facile spin coating technique. The microstructures of the Armalcolite/PDMS sensor are investigated by using XRD, SEM and FTIR techniques. The developed sensor exhibits various desirable properties like high relative percentage sensitivity (−1.50% \u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000C\u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000), excellent linearity (R\u0000<inline-formula><tex-math>$^{2} =$</tex-math></inline-formula>\u0000 0.999), good sensing accuracy (0.1 \u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000C), and better stability (30 days) for the tracking of temperature from (25-45) \u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000C. These outstanding characteristics of the developed sensor show its potential to fulfill the demands of biomedical applications and enduring skin temperature monitoring. Additionally, the real-time application of the sensor in the surveillance of the human skin temperature, rate of breathing, touch sensitivity of fingers, and blow air temperature measurement are anatomized. Furthermore, its efficacy is assessed using an artificial intelligence (AI)-based machine learning classifier, highlighting its potential in e-skin and healthcare application. The sensor also wirelessly transmits temperature data to a mobile device for real-time body temperature monitoring, underscoring its versatility and utility in healthcare applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"168-177"},"PeriodicalIF":0.0,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Devices, Materials, Process Technologies, and Microelectronic Ecosystem Beyond the Exit of the Device Miniaturization Tunnel","authors":"H.-S. Philip Wong;Subhasish Mitra","doi":"10.1109/TMAT.2024.3484369","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3484369","url":null,"abstract":"Many innovations across the system stack – from algorithms and architectures to circuits, devices, fabrication processes, and materials – will provide large synergistic benefits at the system level. While conventional wisdom optimizes for cost per transistor and economizes on the use of transistors, other optimization targets are becoming highly relevant moving forward. Examples include power and energy consumption, complexity of fabrication process, design, manufacturing and testing flows, and cycle time for development and productization. These all have important implications for devices, materials, process technologies, and the microelectronics ecosystem of the future.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"160-167"},"PeriodicalIF":0.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Oxyhalides for Power Electronics","authors":"Sarah R. Evans;Kolade A. Oyekan;Raphael Nam;Mehrdad R. Osanloo;Emeric Deylgat;Shoaib Mansoori;Sabyasachi Tiwari;Massimo V. Fischetti;Hal Edwards;William G. Vandenberghe","doi":"10.1109/TMAT.2024.3482279","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3482279","url":null,"abstract":"Oxyhalides form a family of two-dimensional materials with a large bandgap, which makes them interesting for power electronics applications. However, significant research into oxyhalides for use in electronic devices is lacking. Using first principles calculations, we investigate the feasibility of oxyhalides for power transistors. First, we show the crystal structures and the monolayer and bulk band structures of four oxyhalide materials: BiOCl, InOCl, GaOCl and AlOCl. We then evaluate the mobility, stability regions, defect formation energies, and phonon dispersion of BiOCl. Our results indicate that oxyhalides are a promising \u0000<inline-formula><tex-math>$n$</tex-math></inline-formula>\u0000-type power electronics material, with bulk BiOCl exhibiting a mobility of 101 cm\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000/(Vs) at room temperature. Furthermore, from the thermodynamic stability analysis of the oxyhalides, we show that oxyhalides can be grown at low temperatures (\u0000<inline-formula><tex-math>$&lt;!{400,}^circ$</tex-math></inline-formula>\u0000C), making them a promising material for back-end-of-line compatible growth. Our findings suggest that oxyhalides are a promising candidate for channel materials in future power electronic devices.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"151-159"},"PeriodicalIF":0.0,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advances in Flexible Electrotactile Devices for Restoration of Biomedical Haptic Sensation","authors":"Yunxia Jin;Zixiong Wu;Yusheng Zhang;Jiaming Qi;Chwee Teck Lim","doi":"10.1109/TMAT.2024.3483174","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3483174","url":null,"abstract":"Haptic technology often uses electrical or mechanical methods to stimulate skin mechanoreceptors, creating touch sensations that will enhance experiences in assistive technologies and virtual or augmented reality. One approach involves creating platforms that deliver spatiotemporal sensation to the skin by using thin, skin-like technologies, thus minimizing user discomfort. This review highlights the biological basis for nervous system involved in sensing and the fundamentals of electrotactile devices which facilitate tactile perception in forms suitable for integration with the skin. It discusses principles of human sensation and electrical stimulation, along with materials requirement, aiming to provide a comprehensive understanding of the possibilities of electrotactile techniques and its performance in enabling specific biomedical haptic applications where other haptic technologies are less effective. The potential of current efforts, along with challenges and associated opportunities are also presented.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"126-135"},"PeriodicalIF":0.0,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142636503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Off-Axis Electron Holography as a Tool for the Mapping of Electromagnetic Properties in the Semiconductor Industry","authors":"David Cooper;Victor Boureau;Trevor P. Almeida","doi":"10.1109/TMAT.2024.3482284","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3482284","url":null,"abstract":"In this paper we discuss the state-of-the-art of off-axis electron holography today. We introduce the method and illustrate how it can be used for the measurements of dopants and polarization potentials in a range of different semiconductor materials. We then demonstrate how it can be used to measure the magnetic fields around technologically relevant materials for spintronics. Within this work we also demonstrate the use of off-axis electron holography during in-situ electrical biasing experiments for the study of micro-LED devices and in-situ annealing for the case of MRAM devices. We discuss when holography can and cannot be successfully applied and demonstrate clearly that it is a useful tool that can be used for routine analysis in the semiconductor industry.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"136-150"},"PeriodicalIF":0.0,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142679378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Work Function Measurements of Carbon Structures Using Ultraviolet Photoelectron Spectroscopy","authors":"Saif Taqy;Pallab Sarkar;Istiaq Shiam;Subrata Karmakar;Ariful Haque","doi":"10.1109/TMAT.2024.3475331","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3475331","url":null,"abstract":"The work function of carbon-based materials is crucial in understanding the electronic properties, offering critical insights for optimizing device performance and advancing electronic applications. The work function of diamond-like carbon (DLC), Q-carbon, and diamond is measured using ultraviolet photoelectron spectroscopy (UPS). Three DLC films having different sp\u0000²\u0000/sp\u0000³\u0000 content (I\u0000_D\u0000/I\u0000_G\u0000 ratios 0.43, 0.87, and 1.61) are grown using pulsed laser deposition, and the Q-carbon films are fabricated using subsequent pulsed laser annealing of the DLC films. Moreover, the diamond films are deposited using hot filament chemical vapor deposition (HFCVD). The compositional analysis of the films is performed using Raman spectroscopy, and the formation of Q-carbon is confirmed through Raman spectroscopy and scanning electron microscopic (SEM) analysis. The bandgap measurement using the Tauc plot demonstrates the bandgap of the DLC films to range from 2.56 eV to 3.77 eV, while the bandgap of Q-carbon is measured to be 3.7 eV. The work function measurement reveals the values to range from 3.91 eV to 4.18 eV for the DLC films. Additionally, the work function of Q-carbon is calculated to be 3.82 eV from experimental measurements, while the DFT simulations provide a value of 3.62 eV. Finally, the diamond film's work function is measured at 4.54 eV. Overall, the results reveal insights into the relationship between structural characteristics and work function, providing valuable information for optimizing the performance of these materials in electronic and optoelectronic technologies.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"121-125"},"PeriodicalIF":0.0,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142555111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial A Quick History of Modern Electronics and the Role of Materials, Processes and Interfaces","authors":"Paolo A. Gargini","doi":"10.1109/TMAT.2024.3428948","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3428948","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"64-67"},"PeriodicalIF":0.0,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10659743","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142090942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational Analysis of the Effects of Nanoscale Confinement on the Structure of Low-k Dielectric Hybrid Organosilicate Materials","authors":"Karsu Ipek Kilic;Rasit O. Topaloglu;Jeff Bielefeld;Reinhold H. Dauskardt","doi":"10.1109/TMAT.2024.3446740","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3446740","url":null,"abstract":"Emerging interconnect technologies with increased performance of microchips necessitate the reliable integration of ultra-low-k dielectrics such as hybrid organosilicate glasses (OSG) as insulating units to prevent crosstalk. However, obtaining nanoscale trench patterns densely filled with low-k dielectrics has been challenging as the feature sizes become smaller. Several studies report on the formation of undesired low-density regions within the low-k dielectric decreasing device reliability and preventing easy scalability. With the help of molecular dynamics simulations, we developed computational modeling strategies where we explore the role of OSG precursor structure and the OSG precursor-trench interaction on the formation of low-density regions and final morphology of the low-k filling under confinement. Our goal is to ultimately provide guidance for the experimental efforts for precursor selection to control the formation of low-density regions to enhance mechanical reliability. Our simulation results show that cyclic and hyperconnected 1,3,5-benzene precursor molecules can pack in a relatively more homogeneous fashion under nanoscale confinement compared to more conventionally connected ethylene bridged Et-OCS molecules. The molecular geometry and crosslinking of hyperconnected 1,3,5-benzene precursors can help reduce the formation of low-density regions and lead to better connectivity of the filling material formed under nanoconfinement; thereby yielding improved elastic and fracture properties.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"82-89"},"PeriodicalIF":0.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142165001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}