IEEE Transactions on Materials for Electron Devices最新文献

{"title":"Guest Editorial: Special Section on Reliability and Stress-Induced Phenomena in Microelectronics","authors":"Ehrenfried Zschech;Taek-Soo Kim","doi":"10.1109/TMAT.2025.3636714","DOIUrl":"https://doi.org/10.1109/TMAT.2025.3636714","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"2 ","pages":"3-4"},"PeriodicalIF":0.0,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11301022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148463619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Framework for Exploring Gate-Dielectric Materials for High-Performance Two-Dimensional Field-Effect-Transistors","authors":"Ankit Kumar;Lin Xu;Albert Ho;Arnab Pal;Kunjesh Agashiwala;Kamyar Parto;Wei Cao;Kaustav Banerjee","doi":"10.1109/TMAT.2024.3513236","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3513236","url":null,"abstract":"The choice and engineering of the gate-dielectric (GD) is of paramount importance to the performance and energy-efficiency of two-dimensional (2D) field-effect-transistors (FETs) that are considered to be primary candidates for sub-10 nm gate length (L\u0000_g\u0000) metal-oxide-semiconductor FETs (MOSFETs). Despite remarkable progress achieved in recent years by the semiconductor-industry towards realization of high-performance 2D FETs based on transition-metal dichalcogenides (TMDs), achieving fast switching speeds and low device leakage currents remain an open challenge. More specifically, the effect of traps at the dielectric-2D interface and bulk defects in the dielectric on device performance have not been thoroughly investigated. In this paper, taking a common 2D-TMD material molybdenum disulfide (MoS\u0000₂\u0000) as an example, we explore various GDs and dielectric-stacks – their interfaces, traps and defects, by using rigorous ab-initio density-functional-theory (DFT) and non-equilibrium-Green's-function (NEGF) transport. Our framework and analysis provide valuable insights into the design of n-type 2D MoS\u0000₂\u0000 FETs, including their gate leakage (I\u0000_GL\u0000), subthreshold swing (SS), and ON-current (I\u0000_ON\u0000), and they can be extended to optimize the design and performance of other 2D FETs. More specifically, we demonstrate that monolayer (1L-) and bilayer (2L-) LaOCl/HfO\u0000₂\u0000 are promising GD stacks to achieve IRDS required values for I\u0000_GL\u0000, SS, and I\u0000_ON\u0000 in n-type 2D FETs. Finally, we develop a framework to derive the design-window in terms of material/interface properties valid for both n-type and p-type 2D FETs and identify potential GD materials as a passivation/seeding layer across different L\u0000_g\u0000 for n-type 2D FETs. The results highlight LaOCl as a promising candidate for L\u0000_g\u0000 = 7 nm while several materials, including LaOCl and \u0000<italic>h</i>\u0000BN, are viable for L\u0000_g\u0000 = 10 nm.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"211-220"},"PeriodicalIF":0.0,"publicationDate":"2024-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Electron Devices Society Information","authors":"","doi":"10.1109/TMAT.2024.3469608","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3469608","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10772478","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Editorial An Era of Surfaces","authors":"FRANCESCA IACOPI","doi":"10.1109/TMAT.2024.3486974","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3486974","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"iii-iv"},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766942","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142713868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optoelectrical Dynamic of Perovskite Solar Cells Under Perovskite and Electron Transport Layer Crystallinity Effect","authors":"Akrajas Ali Umar;P. Susthita Menon","doi":"10.1109/TMAT.2024.3501212","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3501212","url":null,"abstract":"This paper discusses a specific case regarding how the behavior of the perovskite lattice and the crystallinity properties of the electron transport layer (ETL) impact the photoelectrical dynamics in perovskite solar cells (PSCs). While many factors influence this photovoltaic process, including the properties of the perovskite layer, ETL, hole transport layer (HTL), and the interfacial properties between these components, the fundamental phenomena occurring within each layer are quite similar. By examining the properties of the perovskite layer and ETL, we can gain valuable insights into how they collectively influence the transport of photogenerated carriers in PSCs. This brief review aims to shed light on these key aspects, thus catalyzing efforts to enhance the performance of perovskite solar cells. Understanding the underlying dynamics at play will enable researchers to devise more targeted strategies to optimize PSCs, ultimately realizing their full potential in renewable energy applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"194-210"},"PeriodicalIF":0.0,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Future Materials for Beyond Si Integrated Circuits: A Perspective","authors":"Luigi Colombo;Salim El Kazzi;Mihaela Popovici;Gilles Delie;Dae Seon Kwon;Sean RC McMitchell;Christoph Adelmann","doi":"10.1109/TMAT.2024.3497835","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3497835","url":null,"abstract":"The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopted in recent decades to enhance the performance of Si integrated circuits. The imperative to uphold Moore's Law for both More Moore and More than Moore devices has driven the industry to study, and later introduce a plethora of materials and innovative processes into the Si fabrication process, spanning from the front-end-of-line (FEOL) to the back-end-of-line (BEOL). This concerted effort aims to bolster computing power and functionality while curbing costs. Scaling Si-channel transistors down to the nanometer level has presented formidable challenges. The emergence of new materials, such as two-dimensional materials like transition metal dichalcogenides, carbon nanotubes, and metal oxides holds promise for further scaling endeavors. With transistors and interconnects nearing their physical limits, these materials offer potential solutions by enabling the fabrication of high-performance devices without relying solely on Si, while integrated at lower thermal budgets. Moreover, these technologies can be repurposed in the BEOL to add extra functionality while reducing the overall device footprint. Recent breakthroughs, notably the successful demonstration of high-performance devices utilizing ALD metal oxides like In\u0000₂\u0000O\u0000₃\u0000, have sparked considerable excitement. Addressing the scaling challenges of interconnects is equally daunting. The quest for materials with lower resistivities than copper interconnects with reduced electromigration at scaled dimensions and efforts to eliminate or minimize barrier layers hold promise in mitigating RC time delay. Non-volatile memories, particularly ferroelectric-based memories, stand to be gained from advancements in materials science. Innovations in such materials as hafnates and enhanced integration techniques for perovskites through electrode stack engineering could facilitate the scaling of current ferroelectric memories. The ongoing introduction of new materials is poised to sustain scaling efforts and unlock novel functionalities in electronic devices for many years.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"178-193"},"PeriodicalIF":0.0,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142810264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Call for Nominations for Editor-in-Chief—IEEE Transactions on Semiconductor Manufacturing","authors":"","doi":"10.1109/TMAT.2024.3489232","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3489232","url":null,"abstract":"","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2024-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10742964","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142587635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a Flexible Armalcolite/PDMS Sensing Device With Machine Learning for Physiological Temperature Monitoring","authors":"Ashis Tripathy;Ashok Mondal;Priyaranjan Sharma;Kamrul Hassan","doi":"10.1109/TMAT.2024.3489492","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3489492","url":null,"abstract":"The ceramic material based skin-attachable wearable sensing device, integrated with artificial intelligence technology, plays a crucial role in real-time temperature monitoring for health-care and disease diagnosis. However, a few unavoidable drawbacks of ceramic materials such as congenital brittleness, toxicity, low biocompatibility, long response and recovery times, poor sensitivity, and hysteresis prevent them from being used in various advanced applications. Therefore, in this research work, a highly sensitive skin-attachable Armalcolite/PDMS-based flexible temperature sensor is fabricated by using a facile spin coating technique. The microstructures of the Armalcolite/PDMS sensor are investigated by using XRD, SEM and FTIR techniques. The developed sensor exhibits various desirable properties like high relative percentage sensitivity (−1.50% \u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000C\u0000<inline-formula><tex-math>$^{-1}$</tex-math></inline-formula>\u0000), excellent linearity (R\u0000<inline-formula><tex-math>$^{2} =$</tex-math></inline-formula>\u0000 0.999), good sensing accuracy (0.1 \u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000C), and better stability (30 days) for the tracking of temperature from (25-45) \u0000<inline-formula><tex-math>$^{circ }$</tex-math></inline-formula>\u0000C. These outstanding characteristics of the developed sensor show its potential to fulfill the demands of biomedical applications and enduring skin temperature monitoring. Additionally, the real-time application of the sensor in the surveillance of the human skin temperature, rate of breathing, touch sensitivity of fingers, and blow air temperature measurement are anatomized. Furthermore, its efficacy is assessed using an artificial intelligence (AI)-based machine learning classifier, highlighting its potential in e-skin and healthcare application. The sensor also wirelessly transmits temperature data to a mobile device for real-time body temperature monitoring, underscoring its versatility and utility in healthcare applications.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"168-177"},"PeriodicalIF":0.0,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142777796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Devices, Materials, Process Technologies, and Microelectronic Ecosystem Beyond the Exit of the Device Miniaturization Tunnel","authors":"H.-S. Philip Wong;Subhasish Mitra","doi":"10.1109/TMAT.2024.3484369","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3484369","url":null,"abstract":"Many innovations across the system stack – from algorithms and architectures to circuits, devices, fabrication processes, and materials – will provide large synergistic benefits at the system level. While conventional wisdom optimizes for cost per transistor and economizes on the use of transistors, other optimization targets are becoming highly relevant moving forward. Examples include power and energy consumption, complexity of fabrication process, design, manufacturing and testing flows, and cycle time for development and productization. These all have important implications for devices, materials, process technologies, and the microelectronics ecosystem of the future.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"160-167"},"PeriodicalIF":0.0,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-Dimensional Oxyhalides for Power Electronics","authors":"Sarah R. Evans;Kolade A. Oyekan;Raphael Nam;Mehrdad R. Osanloo;Emeric Deylgat;Shoaib Mansoori;Sabyasachi Tiwari;Massimo V. Fischetti;Hal Edwards;William G. Vandenberghe","doi":"10.1109/TMAT.2024.3482279","DOIUrl":"https://doi.org/10.1109/TMAT.2024.3482279","url":null,"abstract":"Oxyhalides form a family of two-dimensional materials with a large bandgap, which makes them interesting for power electronics applications. However, significant research into oxyhalides for use in electronic devices is lacking. Using first principles calculations, we investigate the feasibility of oxyhalides for power transistors. First, we show the crystal structures and the monolayer and bulk band structures of four oxyhalide materials: BiOCl, InOCl, GaOCl and AlOCl. We then evaluate the mobility, stability regions, defect formation energies, and phonon dispersion of BiOCl. Our results indicate that oxyhalides are a promising \u0000<inline-formula><tex-math>$n$</tex-math></inline-formula>\u0000-type power electronics material, with bulk BiOCl exhibiting a mobility of 101 cm\u0000<inline-formula><tex-math>$^{2}$</tex-math></inline-formula>\u0000/(Vs) at room temperature. Furthermore, from the thermodynamic stability analysis of the oxyhalides, we show that oxyhalides can be grown at low temperatures (\u0000<inline-formula><tex-math>$&lt;!{400,}^circ$</tex-math></inline-formula>\u0000C), making them a promising material for back-end-of-line compatible growth. Our findings suggest that oxyhalides are a promising candidate for channel materials in future power electronic devices.","PeriodicalId":100642,"journal":{"name":"IEEE Transactions on Materials for Electron Devices","volume":"1 ","pages":"151-159"},"PeriodicalIF":0.0,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}