IEEE Journal on Flexible Electronics最新文献

{"title":"Roll-to-Roll Screen-Printed Monolithic Supercapacitors and Modules With Varying Electrode Areas","authors":"Timo Punkari;Aapo Kattainen;Alexandre Fonseca;Joana Pronto;Jari Keskinen;Matti Mäntysalo","doi":"10.1109/JFLEX.2024.3510216","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3510216","url":null,"abstract":"Monolithic supercapacitors (SCs) were fabricated using roll-to-roll (R2R) screen printing. The printing process was utilized for various layouts, in which the electrode area was changed for different SC cells and modules. A common fabrication method for SCs is to assemble stacked structure by different layers. Another fabrication method requires a planar interdigitated electrode (IDE) structure, in which the SC can be fully printed on a single substrate. However, a more novel approach is to use a monolithic structure, which represents a stacked structure. The monolithic SC is printed layer-by-layer on a single substrate but is not restricted to the IDE structure enabling larger capacitance and lower equivalent series resistance (ESR). In this work, the monolithic SCs were successfully fabricated from R2R by screen printing. The printed SCs include individual cells and modules with cells in series. All SCs had varying electrode areas to achieve different capacitances and to determine if the area affects to the yield. The smaller area was observed to better prevent the contact through the separator. However, the modules had more variation in the cells, even with smaller electrode areas.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 1","pages":"12-19"},"PeriodicalIF":0.0,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10772224","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-Temperature Fabrication of Mesoporous SiO₂ CBRAM Memory Cells on Flexible Substrates","authors":"Roxane Mamberti;Evangéline Bènevent;Marc Bocquet;Jérémy Postel-Pellerin;Minh-Anh Luong;David Grosso;Cédric Djaou;Magali Putero","doi":"10.1109/JFLEX.2024.3505072","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3505072","url":null,"abstract":"Conductive bridge random access memories (CBRAMs) are promising candidates for memory applications on flexible substrates. In this study, mesoporous SiO2 CBRAM memory cells were fabricated and tested using a low-temperature process as low as 120 °C, making them compatible with various flexible substrates. A comparative study was conducted to validate the characteristics and performance of these memory cells in relation to conventional manufacturing process. We demonstrate the nonvolatile characteristics of the cells, which feature low switching voltages, a high-resistance ratio of <inline-formula> <tex-math>$10^{4}$ </tex-math></inline-formula> between high- and low-resistance states, and reliable bipolar switching behavior, enduring over <inline-formula> <tex-math>$10^{3}$ </tex-math></inline-formula> write-read-erase-read cycles. Furthermore, memory cells fabricated on polyethylene terephthalate (PET) substrates using the low-temperature process show stable and highly promising responses to mechanical stress. These results pave the way for the fabrication of simple, low-cost crossbar memory arrays on flexible substrates using a combination of sol-gel and inkjet-printing processes.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 1","pages":"30-41"},"PeriodicalIF":0.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal on Flexible Electronics Publication Information","authors":"","doi":"10.1109/JFLEX.2024.3488917","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3488917","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 8","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10754991","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal on Flexible Electronics Publication Information","authors":"","doi":"10.1109/JFLEX.2024.3485151","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3485151","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10740954","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Guest Editorial: Special Issue on Direct Papers to the IEEE International Flexible Electronics Technology Conference (IFETC) 2024","authors":"Niels Benson;Riccardo Colella;Luisa Petti;Almudena Rivadeneyra;Gregory L. Whiting","doi":"10.1109/JFLEX.2024.3466615","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3466615","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"290-291"},"PeriodicalIF":0.0,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10741007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Graphene-Based Phase Change Thermal Interface Nanocomposite and Heat Sink for Thermal Management","authors":"Remya Kunjuveettil Govind;Vyshnav P. Dinesh;Gopika Balagopal;Rahul Nisha Dhanesh;Alex James","doi":"10.1109/JFLEX.2024.3488612","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3488612","url":null,"abstract":"Thermal interface materials (TIMs) with high thermal conductivity enable efficient heat dissipation from electronic devices, such as integrated circuits (ICs) leading to their performance and lifetime enhancement. Phase change materials (PCMs) are widely used as TIMs due to the storage as well as the release of heat during their phase change transitions. One of the widely used PCMs is paraffin wax; however, due to the low heat conductivity, paraffin wax performs as a poor TIM. Here, one of the strategies to improve the thermal conductivity is presented, i.e., the addition of thermally conducting filler materials, in the present case, graphene. Graphene/paraffin wax/agar agar nanocomposite TIM has been synthesized and characterized. The nanocomposite shows twofold enhancement in thermal conductivity (0.44 W/m<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>K) compared with paraffin wax with only a 3.6 wt.% addition of graphene. Heat sink based on graphene simulation shows higher performance compared with aluminum. Experiments demonstrate the higher heat dissipation from the ICs using the nanocomposite TIM compared with the commercial thermal grease. The combination of graphene-based PCM nanocomposite TIM and graphene-based heat sink will help to improve the performance of ICs.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 12","pages":"552-560"},"PeriodicalIF":0.0,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10738850","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143716421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-Polymer Complementary Logic on Plastic With Micrometer-Scale Laser-Ablated Channels","authors":"Swathi Kadaba;Alina Sharova;Mario Caironi","doi":"10.1109/JFLEX.2024.3486670","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3486670","url":null,"abstract":"Maskless fabrication of polymer field-effect transistors (FETs), especially on flexible substrates, offers a more sustainable production scheme for large-area integrated circuits. To be practically relevant, scalable fabrication approaches granting micrometer-scale patterning resolution are necessary. To this end, parallelizable direct-writing techniques, such as materials printing and laser patterning, have been proposed as a promising approach. Yet, the possibility of fabricating circuits with such an approach has not been reported. Here, we demonstrate the fabrication of p- and n-type FETs based on printed conjugated polymers on plastic foil by combining inkjet printing and femtosecond laser ablation. We utilize Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as the printed electrodes, independently optimized for hole (p-type) and electron (n-type) injection. The flexibility of our direct-writing process in defining the geometrical features of FETs is exploited to match complementary transistors and achieve balanced complementary logic inverters. The robustness of the inverters and compatibility of the proposed fabrication scheme on plastic is reported with the realization of a proof-of-principle all-polymer three-stage complementary ring oscillator (RO) operating down to 5 V.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 5","pages":"194-200"},"PeriodicalIF":0.0,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144597726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Textile-Based Washable Multimode Capacitive Sensors for Wearable Applications","authors":"Muhammad Qasim Mehmood;Malik Adnan;Muhammad Hamza Zulfiqar;Khaled A. Aljaloud;Rimsha Sarwar;Rifaqat Hussain;Ali H. Alqahtani;Akram Alomainy","doi":"10.1109/JFLEX.2024.3483195","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3483195","url":null,"abstract":"Nowadays, textile-based sensors are of great interest because of the significance of intelligent and smart textiles in wearable applications because of textiles’ washability, flexibility, and durability. We developed conductive yarn-based textile sensors for wearable multimode human-machine interfaces (HMIs), breathing, and walking pattern detection. The low-cost sewing process is used to develop interdigitated capacitive (IDC) sensor patterns on shirts, masks, and shoe soles using ultrafine highly conductive thread. Four sensor-based touchpads (SBTPs) were developed on the shirt and showed multiple modes of operation based on the pressure of the finger touch. The multimode capacitive sensors-based HMI is connected to the laptop wirelessly to perform three different functions from each sensor. The sensors exhibit a sensitivity of 34.675, 29.440, and 25.789 pF/N at low, medium, and high touch pressure. The developed mask detects the breathing pattern of humans, whether it’s slow, normal, or fast. Shoe Insole developed sensors to see the walking pattern, either slow, normal, or running. The response and recovery time of the sensor system is 11 and 10 ms, respectively. Sensors tested for 20000 detection cycles and responded stability. Also, the sensors responded accurately after washing with water and detergent water. Reported textile sensors are washable, flexible, stretchable, comfortable, and reusable, showing the practicality of proposed sensors for personalized healthcare, smart textiles, and electronic textiles (e-textiles).","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 10","pages":"445-453"},"PeriodicalIF":0.0,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Analysis of Compact Modeled of Low-Voltage OTFTs on Flexible and Silicon Substrates for the Implementation of Logic Circuits","authors":"Mukuljeet Singh Mehrolia;Ankit Verma;Abhishek Kumar Singh","doi":"10.1109/JFLEX.2024.3471489","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3471489","url":null,"abstract":"This article discusses the compact modeling of organic thin-film transistors (OTFTs) fabricated on both flexible and silicon substrates. These compact models are used to implement inverters, 2-input NAND gate, and half-adder circuits. For the compact modeling and circuit design, Silvaco TechModeler and Silvaco Gateway tools are utilized. Both the flexible and silicon substrate OTFTs operate at −2 V, with saturated currents of −2 and \u0000<inline-formula> <tex-math>$- 3.9~mu $ </tex-math></inline-formula>\u0000A, respectively. Comparative analysis using dc and transient behavior reveals that the OTFT on the flexible substrate has a delay of 3.7 ns and a gain of 4.7, while the OTFT on the silicon substrate has a delay of 5.5 ns and a gain of 3.2. The OTFT on the flexible substrate is approximately 49% faster and exhibits a gain 1.47 times higher than the OTFT on the silicon substrate. Furthermore, the OTFT on the flexible substrate successfully realizes half-adder outputs for all four input cases (00, 01, 10, and 11), whereas the OTFT on the silicon substrate fails to do so for all cases. These results demonstrate that the OTFT on the flexible substrate significantly outperforms the OTFT on the silicon substrate in terms of delay, gain, and output consistency for the given inputs. In the future, the OTFT on the flexible substrate’s quick response, high gain, and reliable performance in NAND and half-adder circuits could offer advantages in the development of complex memory circuits, analog circuits, and other applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"341-347"},"PeriodicalIF":0.0,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemical Active Ions Sensitive and Thermal Responses of Triboelectric Generators","authors":"Shatrudhan Palsaniya;Bheru Lal Jat;Ashok Kumar Dasmahapatra;Ram Chandra Palsaniya","doi":"10.1109/JFLEX.2024.3469888","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3469888","url":null,"abstract":"This work shows paper-based triboelectric generator development (TEG) with multifunctional capabilities. Monitoring techniques unveil consistent responses. Conventional TEG generates an open-circuit voltage (\u0000<inline-formula> <tex-math>${V} _{mathrm {oc}}$ </tex-math></inline-formula>\u0000) of ~10 V and a short-circuit current (\u0000<inline-formula> <tex-math>${I} _{mathrm {sc}}$ </tex-math></inline-formula>\u0000) of \u0000<inline-formula> <tex-math>$sim 64.14~mu $ </tex-math></inline-formula>\u0000 A. Electrochemical D-TEG achieves notable charge transfer and energy density (\u0000<inline-formula> <tex-math>${U} _{mathrm {e}}$ </tex-math></inline-formula>\u0000) of about \u0000<inline-formula> <tex-math>$3.88~mu $ </tex-math></inline-formula>\u0000 J cm−2 at 0.1 M KCl. The ionic solid interface reduces internal resistance (\u0000<inline-formula> <tex-math>${R} _{mathrm {in}}$ </tex-math></inline-formula>\u0000), contributes consistent ionic conductivities (\u0000<inline-formula> <tex-math>$sigma _{mathrm {ac}}$ </tex-math></inline-formula>\u0000), and maximum \u0000<inline-formula> <tex-math>$sigma _{mathrm {ac}}$ </tex-math></inline-formula>\u0000 is observed at 0.1 M KCl. Thermal agitated T-TEG shows improved performance with maximum \u0000<inline-formula> <tex-math>${V} _{mathrm {oc}}$ </tex-math></inline-formula>\u0000 of ~1.23 V and \u0000<inline-formula> <tex-math>${I} _{mathrm {sc}}$ </tex-math></inline-formula>\u0000 of \u0000<inline-formula> <tex-math>$sim 129~mu $ </tex-math></inline-formula>\u0000 A at \u0000<inline-formula> <tex-math>$40~^{circ }$ </tex-math></inline-formula>\u0000 C. Thermally directed Ag ink inscribed interdigitate structured (IDs) T-TEG exhibit improved \u0000<inline-formula> <tex-math>${I} _{mathrm {sc}}$ </tex-math></inline-formula>\u0000 at temperature cycles. This study includes a detailed analysis of electron transfer mechanisms via energy band models in different environments, highlighting the solid ionic coupling effect on energy states and contact impedance. TEG can show potential in clinical diagnostic sensors, specifically ion recognition offering affordability and scalability.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 9","pages":"426-433"},"PeriodicalIF":0.0,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}