IEEE Journal on Flexible Electronics最新文献

{"title":"Screen-Printed Microsupercapacitors on Paper With Additive-Free 1T MoS2 Ink for Sustainable Energy Solutions","authors":"Siri Chandana Amarakonda;Sandeep Kumar Mondal;Vimal Kumar Mariappan;P. P. Mohammed Hadhi;Subho Dasgupta","doi":"10.1109/JFLEX.2024.3459854","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3459854","url":null,"abstract":"This study introduces a novel binder-free 1T molybdenum disulfide symmetric microsupercapacitor (1T MoS2 SMSC) fabricated on a flexible paper substrate. By fine-tuning the geometry of the electrode fingers and employing a quasi-solid 3M polyvinyl alcohol (PVA)-H2SO4 electrolyte, we have achieved high capacitance and excellent cyclic stability across various operational conditions. Electrochemical characterization, including cyclic voltammetry (CV) and chronopotentiometry (CP), revealed that the 1T MoS2 SMSC maintains nearly quasi-rectangular CV curves, indicating an ideal capacitive behavior. The device demonstrated a high areal capacitance of 22.5 mF\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000cm−2 at 2 mV\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000s−1. In addition, the series connections of the devices have shown promising performance metrics suitable for portable electronic applications, achieving significant energy and power density (PD) values.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"356-361"},"PeriodicalIF":0.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Biodegradable Metals for Green and Sustainable Temperature Sensors","authors":"Qazi Zahid Husain;Dianne Corsino;Soufiane Krik;Andrea Stona;Niko Münzenrieder;Giuseppe Cantarella","doi":"10.1109/JFLEX.2024.3449832","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3449832","url":null,"abstract":"The management of electronics waste and the development of sustainable end-of-life strategies are key aspects of the green evolution of the electronics industry. To address this global issue, we implemented thin-film resistance temperature detectors (RTDs) using green sensing metals, such as Mg, Mo, and Zn, and poly-ether ether ketone (PEEK), as a biocompatible, flexible, and thermally resistant substrate. The environmentally friendly RTDs were characterized in a range of temperature, from 25 °C to 70 °C, showing consistent response and average sensitivities of \u0000<inline-formula> <tex-math>$1.1times 10^{-1}$ </tex-math></inline-formula>\u0000%/°C, \u0000<inline-formula> <tex-math>$7times 10^{-2}$ </tex-math></inline-formula>\u0000%/°C, and \u0000<inline-formula> <tex-math>$5.8times 10^{-2}$ </tex-math></inline-formula>\u0000%/°C for Mg, Mo, and Zn, respectively. At a constant temperature 25 °C, the effect of humidity variation from 10% to 90% on the resistance of the sensors was observed to be \u0000<inline-formula> <tex-math>$2.0times 10^{-5}$ </tex-math></inline-formula>\u0000%/relative humidity (RH), \u0000<inline-formula> <tex-math>$3.4times 10^{-2}$ </tex-math></inline-formula>\u0000%/RH, and \u0000<inline-formula> <tex-math>$5times 10^{-3}$ </tex-math></inline-formula>\u0000%/RH, respectively, for Mg, Mo, and Zn RTDs. Furthermore, the sensor’s response to mechanical strain was evaluated by bending the devices down to a 10-mm bending radius. In addition, the dissolution of the green RTDs in water allows the reusability of the substrate for a new fabrication batch, minimizing the amount of electronics waste generated. Through this study, a promising solution to environmental concerns, realizing is endowed for realizing temperature sensors, with applications in green and sustainable wearable systems is demonstrated.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"306-311"},"PeriodicalIF":0.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10670483","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate-All-Around Cylindrical Nanowire FET-Based Room Temperature Ammonia Sensor for Diagnostic Applications","authors":"Sukanya Ghosh;Lintu Rajan","doi":"10.1109/JFLEX.2024.3454561","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3454561","url":null,"abstract":"Demonstrated through this research is an inspection of gate-all-around (GAA) cylindrical nanowire field-effect transistor (NWFET), concentrating on its ammonia (NH3) sensing performance for diagnostic purposes under room temperature (RT). Apart from effectively minimizing the short-channel effects (SCEs) owing to the improved gate strength, this multigated structure elevates current driving capability and is compatible with regular complementary metal-oxide–semiconductor (CMOS) processes. A systematized investigation of the sensing behavior has been illustrated through effectual modifications in molybdenum (Mo) and ruthenium (Ru) catalytic metal gate work functions depending on the concentration of NH3 arriving at the metallic surface. A concentration-reliant in-depth inspection has been elucidated with respect to the electric field and transfer characteristics. The sensing potentiality of the proposed NWFET has been assessed under the target NH3 environment with reference to the transformation in distinguished parameters for, e.g., ON-current (\u0000<inline-formula> <tex-math>$I_{text {ON}}$ </tex-math></inline-formula>\u0000), OFF-current (\u0000<inline-formula> <tex-math>$I_{text {OFF}}$ </tex-math></inline-formula>\u0000), transconductance (gm), subthreshold slope (SS), threshold voltage (\u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000), and so on., using the ATLAS simulator. The optimally constructed ammonia sensor demonstrates excellent \u0000<inline-formula> <tex-math>$I_{text {ON}}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>$I_{text {OFF}}$ </tex-math></inline-formula>\u0000 ratios of approximately \u0000<inline-formula> <tex-math>${sim }{{10}}^{{8}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${sim }{{10}}^{{9}}$ </tex-math></inline-formula>\u0000 significant \u0000<inline-formula> <tex-math>$I_{text {OFF}}$ </tex-math></inline-formula>\u0000 sensing responses of \u0000<inline-formula> <tex-math>${sim }{2.32} times {{10}}^{{2}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${sim }{1.28} times {{10}}^{{2}}$ </tex-math></inline-formula>\u0000, large \u0000<inline-formula> <tex-math>$text {g}_{text {m}}$ </tex-math></inline-formula>\u0000 sensing outcomes of 99.90% and 99.67%, significant SS sensing outputs (\u0000<inline-formula> <tex-math>$S_{text {SS}}$ </tex-math></inline-formula>\u0000) of ~83% and ~62.5%, better threshold voltage sensing responses (\u0000<inline-formula> <tex-math>$S_{text {VTH}}$ </tex-math></inline-formula>\u0000) of ~52.3% and ~34.4%, respectively, for Mo and Ru metallic gates under 1.04-ppm NH3 concentration at RT. The operation of the proposed GAA NWFET in the subthreshold region at RT makes it a promising candidate in terms of low power consumption and cost-effectiveness.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 9","pages":"418-425"},"PeriodicalIF":0.0,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Silicon: Status, Opportunities, and Challenges","authors":"Nikitha Kannan;Navneet Gupta","doi":"10.1109/JFLEX.2024.3453779","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3453779","url":null,"abstract":"The rise of the Internet of Everything has spurred the need for flexible and stretchable electronic devices, particularly in biomedical applications. Monocrystalline silicon, a key material in the semiconductor industry, must be adapted to meet these demands. This article explores various thinning techniques to fabricate flexible silicon wafers, methods for transferring silicon to flexible substrates, and the importance of enhancing silicon’s stretchability. Furthermore, it discusses the impact of flexible silicon on sectors such as biomedical sensing, electronics, and power systems, highlighting the role of the Internet of Things (IoT) platform in interconnecting devices. Finally, this article examines current progress and future prospects in flexible silicon technology, paving the way for further advancements in this rapidly evolving field.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 10","pages":"436-444"},"PeriodicalIF":0.0,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663398","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal on Flexible Electronics Publication Information","authors":"","doi":"10.1109/JFLEX.2024.3440811","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3440811","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643438","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Guest Editorial: Special Issue of Selected Extended Papers From the International Flexible Electronics Technology Conference (IFETC) 2023","authors":"Samar Saha;Tse Nga Ng;Nazek El-Atab;Siddhartha Panda;Joseph S. Chang;Sanjiv Sambandan;Bikram Mahajan;Luca Catarinucci;Muhammad Mustafa Hussain","doi":"10.1109/JFLEX.2024.3438309","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3438309","url":null,"abstract":"This issue of the IEEE Journal on Flexible Electronics (J-FLEX) presents the Special Section containing eight revised and extended versions of selected papers presented at the 5th IEEE International Flexible Electronics Technology Conference (IFETC) 2023 held at the DoubleTree by Hilton Hotel in San Jose, CA, USA during August 13–16, 2023.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"224-227"},"PeriodicalIF":0.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643429","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable High-Performance MWCNTs/PDMS Nanocomposite-Based Triboelectric Nanogenerators for Haptic Applications","authors":"Suresh Nuthalapati;Aniket Chakraborthy;Injamamul Arief;Kamal Kumar Meena;Kushal Ruthvik Kaja;R. Rakesh Kumar;K. Uday Kumar;Amit Das;Mehmet Ercan Altinsoy;Anindya Nag","doi":"10.1109/JFLEX.2024.3446756","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3446756","url":null,"abstract":"Triboelectric nanogenerators (TENGs) are fast emerging as promising and potential energy harvesters. However, the performance of the polymer-based TENGs needs to be enhanced for haptic and wearable applications. In this work, we have designed and developed polydimethylsiloxane (PDMS) and multiwalled carbon nanotubes (MWCNTs)-based TENG for haptic applications. The unique electrical properties of the human body, which make it a suitable triboelectric material, were a critical factor in our design. The incorporation of MWCNTs enhanced the electrical properties of the nanocomposite, thereby increasing the performance of the TENG. To demonstrate the performance of the TENG under variable contact tapping forces and frequencies, the as-fabricated films were tested in vertical contact separation and single electrode modes. The TENG exhibited an open-circuit output voltage of ~249 V, a short-circuit current of \u0000<inline-formula> <tex-math>$sim 28.03~mu $ </tex-math></inline-formula>\u0000A, and a power density of 2.81 W/m2 at a matching load of 5.5 M\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000. The TENG exhibited an excellent, stable electrical performance for haptic applications. The TENG’s excellent performance was validated by the illumination of 30 blue and 120 red LEDs. Additionally, it was employed to power portable electronic devices. Therefore, these flexible and wearable TENGs with high performance are highly desirable for haptic applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 9","pages":"393-400"},"PeriodicalIF":0.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation and Modeling of Emerging Heterojunction Transistors: Toward Rational Design and Optimization","authors":"Hocheon Yoo;Ryoma Hayakawa;Yutaka Wakayama;Chang-Hyun Kim","doi":"10.1109/JFLEX.2024.3437369","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3437369","url":null,"abstract":"This review summarizes the recent progress in the simulation and modeling of two important types of thin-film heterojunction transistors. Both structures functionally rely on the formation of a lateral p-n junction inside a single source-to-drain channel. However, different extents of vertical overlap between the p- and n-type semiconductor films produce unique switching characteristics of the respective systems. Experimental evidences behind recent theoretical models and the predictive capabilities of these models are illustrated with published examples. Simulation results of multivalued logic (MVL) circuits built with these heterojunction transistors are also discussed to emphasize practical aspects of device modeling for circuit- and system-level optimization.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 11","pages":"492-501"},"PeriodicalIF":0.0,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Carbon-Based NTC Resistive Temperature Sensor for Edible Electronics","authors":"Valerio Francesco Annese;Valerio Galli;Giulia Coco;Mario Caironi","doi":"10.1109/JFLEX.2024.3436594","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3436594","url":null,"abstract":"A negative temperature coefficient (NTC) resistive sensor implemented using only food-grade materials, namely, activated carbon (AC), gelatin candy, gold, ethyl cellulose, and beeswax, was implemented. We envision that this sensor might find future applications in measuring temperature within the gastrointestinal (GI) tract. Differently from other edible implementations typically based on ionic conductivity, the device herein presented leverages the electronic conductivity of AC and therefore benefits from a simple readout circuit. The sensor features a sensitivity of −0.32% °C−1 and high linearity within the range \u0000<inline-formula> <tex-math>$5~^{circ }$ </tex-math></inline-formula>\u0000C–\u0000<inline-formula> <tex-math>$50~^{circ }$ </tex-math></inline-formula>\u0000C. Comparative analysis with a commercially available component reveals analogous functional output. The inherently safe-to-eat feature of the component shows a feasible pathway to miniaturized digestible platforms for GI tract monitoring, as well as sustainable solutions for agrifood and environment monitoring purposes.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"300-305"},"PeriodicalIF":0.0,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development and Characterization of Biocompatible Cellulose Acetate Substrate for Flexible Electrochemical Biosensors","authors":"Karri Trinadha Rao;Rahul Gangwar;K. Aditya Bhagavathi;Sajmina Khatun;Pravat Kumar Sahu;Aravind Kumar Rengan;Challapalli Subrahmanyam;Suresh Kumar Garlapati;Siva Rama Krishna Vanjari","doi":"10.1109/JFLEX.2024.3435809","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3435809","url":null,"abstract":"This article focuses on the development and characterization of flexible, biocompatible substrates using cellulose acetate (CA), a natural biopolymer known for its biocompatibility and adjustable biodegradability. As a proof of concept, the electrochemical detection of Staphylococcus aureus was carried out using Au-nanoparticle (NP)-modified flexible screen-printed electrode (FSPE) on the CA substrate. The key take away from the reliability studies is that the electrochemical performance is intact after multiple bendings. The tensile strength of 2.75±0.03 MPa is an indicative of the flexibility of the substrate. The substrate showed little degradation during the fabrication of screen-printed electrode (SPE) and the time-consuming surface functionalization protocols required for Au-NP deposition and bioreceptor immobilization. The selective and ultrasensitive detection of S.aureus (LOD: 0.13 CFU/mL) is a testimony for the robustness of the substrate in flexible electrochemical biosensor applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"312-319"},"PeriodicalIF":0.0,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}