Gate-All-Around Cylindrical Nanowire FET-Based Room Temperature Ammonia Sensor for Diagnostic Applications

Sukanya Ghosh;Lintu Rajan
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Abstract

Demonstrated through this research is an inspection of gate-all-around (GAA) cylindrical nanowire field-effect transistor (NWFET), concentrating on its ammonia (NH3) sensing performance for diagnostic purposes under room temperature (RT). Apart from effectively minimizing the short-channel effects (SCEs) owing to the improved gate strength, this multigated structure elevates current driving capability and is compatible with regular complementary metal-oxide–semiconductor (CMOS) processes. A systematized investigation of the sensing behavior has been illustrated through effectual modifications in molybdenum (Mo) and ruthenium (Ru) catalytic metal gate work functions depending on the concentration of NH3 arriving at the metallic surface. A concentration-reliant in-depth inspection has been elucidated with respect to the electric field and transfer characteristics. The sensing potentiality of the proposed NWFET has been assessed under the target NH3 environment with reference to the transformation in distinguished parameters for, e.g., ON-current ( $I_{\text {ON}}$ ), OFF-current ( $I_{\text {OFF}}$ ), transconductance (gm), subthreshold slope (SS), threshold voltage ( $V_{\text {TH}}$ ), and so on., using the ATLAS simulator. The optimally constructed ammonia sensor demonstrates excellent $I_{\text {ON}}$ / $I_{\text {OFF}}$ ratios of approximately ${\sim }{{10}}^{{8}}$ and ${\sim }{{10}}^{{9}}$ significant $I_{\text {OFF}}$ sensing responses of ${\sim }{2.32} \times {{10}}^{{2}}$ and ${\sim }{1.28} \times {{10}}^{{2}}$ , large $\text {g}_{\text {m}}$ sensing outcomes of 99.90% and 99.67%, significant SS sensing outputs ( $S_{\text {SS}}$ ) of ~83% and ~62.5%, better threshold voltage sensing responses ( $S_{\text {VTH}}$ ) of ~52.3% and ~34.4%, respectively, for Mo and Ru metallic gates under 1.04-ppm NH3 concentration at RT. The operation of the proposed GAA NWFET in the subthreshold region at RT makes it a promising candidate in terms of low power consumption and cost-effectiveness.
用于诊断应用的栅极全方位圆柱形纳米线fet室温氨传感器
通过本研究演示了对栅极全能(GAA)圆柱形纳米线场效应晶体管(NWFET)的检查,重点研究了其在室温(RT)下用于诊断目的的氨(NH3)传感性能。由于栅极强度的提高,除了有效地减少了短通道效应(SCEs)外,这种多门结构还提高了电流驱动能力,并与常规的互补金属氧化物半导体(CMOS)工艺兼容。通过对钼(Mo)和钌(Ru)催化金属栅功函数的有效修饰,系统地研究了感应行为,这取决于到达金属表面的NH3浓度。对电场和转移特性进行了浓度依赖的深入检查。在目标NH3环境下,根据不同参数的变换,例如通流($I_{\text {ON}}$)、关流($I_{\text {OFF}}$)、跨导(gm)、亚阈值斜率(SS)、阈值电压($V_{\text {TH}}$),评估了所提出的NWFET的传感电位。,使用ATLAS模拟器。优化构建的氨传感器具有优异的$I_{\文本{ON}}$ / $I_{\文本{OFF}}$比值,约为${\sim}{{10}}}{{8}}$和${\sim}{{10}}}}{{9}}$显著的$I_{\文本{OFF}}$感应响应为${\sim}{2.32} \倍{{10}}}{{2}}$和${\sim}{1.28} \倍{{10}}}{{2}}$,较大的$\文本{g}}{\文本{m}}$感应结果为99.90%和99.67%,显著的SS感应输出($S_{\文本{SS}}$)为~83%和~62.5%。当NH3浓度为1.04 ppm时,Mo和Ru金属栅极的阈值电压传感响应($S_{\text {VTH}}$)分别为~52.3%和~34.4%。本文提出的GAA NWFET在RT下阈值区域的运行使其具有低功耗和成本效益的前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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