IEEE Journal on Flexible Electronics最新文献

{"title":"Integration of a Textile Electrode Into a Smart Glove for On-Field Analysis of Fruit Quality","authors":"Pietro Ibba;Zahid Muhammad;Martina Aurora Costa Angeli;Giuseppe Cantarella;Bajramshahe Shkodra;Antonio Altana;Athanassia Athanassiou;Paolo Lugli;Luisa Petti","doi":"10.1109/JFLEX.2024.3466108","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3466108","url":null,"abstract":"In the field of smart agriculture, the on-site assessment of fruit quality is gaining an increased attention, due to the possibility it offers to precisely and rapidly evaluate fruit quality, enabling real-time decision-making while reducing waste and ensuring a high-quality final produce. In this context, the extreme portability and flexibility of human hand-based tools, such as smart gloves, hold the potential to revolutionize the field. In this study, a textile-based wearable smart glove prototype is presented, combining textile thermoplastic polyurethane-carbon nanofiber (TPU-CNF)-based printed electrodes and a portable impedance analyzer, for on-site fruit monitoring applications. The presented conductive ink, prepared using TPU with a 50-wt% concentration of CNFs, is spray coated onto a stretchable Lycra fabric to prepare the electrodes. The realized electrodes presented good electromechanical behavior when subjected to strain stress of up to 250% (static) and 100% (dynamic, 1000 cycles) and displayed thermal-healing properties upon extreme damage, recovering up to 90% of the starting electrical properties. Furthermore, the employment for bioimpedance analysis on fruit provided reliable results in line with commercial electrodes up to frequencies of 500 kHz, well above the limit of employment of bioimpedance for fruit analysis with portable systems. The final integration within the proposed smart glove prototype, validated with a practical on-plant fruit bioimpedance analysis, proved the quality of the system and paves the way for its extensive on-field application.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"326-333"},"PeriodicalIF":0.0,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10685366","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Aligned InGaZnO Thin-Film Transistors and Circuits on Transparent Thin Glass and FEP Film","authors":"Dianne C. Corsino;Federica Catania;Sean Garner;Giuseppe Cantarella;Niko Münzenrieder","doi":"10.1109/JFLEX.2024.3462676","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3462676","url":null,"abstract":"Thin-film electronics realized on flexible substrates opens up a new realm of innovative applications, such as wearable technologies that are unviable with conventional electronic systems on rigid carriers. The challenge, however, is to establish the fabrication of miniaturized devices with dimensions at the micrometer scale and to take into account the possibility of misalignment on thin, flexible, and, potentially, soft substrates. One efficient way to structure short channels is to employ self-alignment where the channel length is defined by the gate contact. Such an approach relies on the transparency of the substrate and is extremely time consuming, and if traditional, only partially transparent substrates are used. Here, we implement self-aligned InGaZnO (IGZO) thin-film transistors (TFTs) and circuits on novel flexible and highly transparent substrates, namely, 100-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m thin glass and 50-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula> m fluorinated ethylene propylene (FEP) film, resulting in self-aligned IGZO TFTs with channel lengths as short as 2.2 and <inline-formula> <tex-math>$4.5~mu $ </tex-math></inline-formula> m, respectively. The IGZO TFTs on the respective substrates exhibit on-off current ratios and effective mobilities of <inline-formula> <tex-math>${approx }10^{10}$ </tex-math></inline-formula> and 7.6 cm<inline-formula> <tex-math>$^{2} cdot $ </tex-math></inline-formula> V<inline-formula> <tex-math>$^{-1} cdot $ </tex-math></inline-formula> s−1, and <inline-formula> <tex-math>${approx }10^{2}$ </tex-math></inline-formula> and 11.5 cm<inline-formula> <tex-math>$^{2} cdot $ </tex-math></inline-formula> V<inline-formula> <tex-math>$^{-1} cdot $ </tex-math></inline-formula> s−1. The ac performance of the TFTs reaches a maximum oscillation frequency up to 147 MHz. The IGZO TFT further demonstrates mechanical stability by showing full functionality on thin glass even when bent to a radius of 25 mm. At the same time, inverters and common-source amplifiers based on self-aligned IGZO TFTs demonstrate operation at frequencies in the kilohertz range. This work presents a facile approach for realizing high-speed and flexible transistors and circuits based on self-alignment, leveraging the merit of transparent substrates.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 11","pages":"484-491"},"PeriodicalIF":0.0,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10681570","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Screen-Printed Microsupercapacitors on Paper With Additive-Free 1T MoS2 Ink for Sustainable Energy Solutions","authors":"Siri Chandana Amarakonda;Sandeep Kumar Mondal;Vimal Kumar Mariappan;P. P. Mohammed Hadhi;Subho Dasgupta","doi":"10.1109/JFLEX.2024.3459854","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3459854","url":null,"abstract":"This study introduces a novel binder-free 1T molybdenum disulfide symmetric microsupercapacitor (1T MoS2 SMSC) fabricated on a flexible paper substrate. By fine-tuning the geometry of the electrode fingers and employing a quasi-solid 3M polyvinyl alcohol (PVA)-H2SO4 electrolyte, we have achieved high capacitance and excellent cyclic stability across various operational conditions. Electrochemical characterization, including cyclic voltammetry (CV) and chronopotentiometry (CP), revealed that the 1T MoS2 SMSC maintains nearly quasi-rectangular CV curves, indicating an ideal capacitive behavior. The device demonstrated a high areal capacitance of 22.5 mF\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000cm−2 at 2 mV\u0000<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>\u0000s−1. In addition, the series connections of the devices have shown promising performance metrics suitable for portable electronic applications, achieving significant energy and power density (PD) values.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"356-361"},"PeriodicalIF":0.0,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Biodegradable Metals for Green and Sustainable Temperature Sensors","authors":"Qazi Zahid Husain;Dianne Corsino;Soufiane Krik;Andrea Stona;Niko Münzenrieder;Giuseppe Cantarella","doi":"10.1109/JFLEX.2024.3449832","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3449832","url":null,"abstract":"The management of electronics waste and the development of sustainable end-of-life strategies are key aspects of the green evolution of the electronics industry. To address this global issue, we implemented thin-film resistance temperature detectors (RTDs) using green sensing metals, such as Mg, Mo, and Zn, and poly-ether ether ketone (PEEK), as a biocompatible, flexible, and thermally resistant substrate. The environmentally friendly RTDs were characterized in a range of temperature, from 25 °C to 70 °C, showing consistent response and average sensitivities of \u0000<inline-formula> <tex-math>$1.1times 10^{-1}$ </tex-math></inline-formula>\u0000%/°C, \u0000<inline-formula> <tex-math>$7times 10^{-2}$ </tex-math></inline-formula>\u0000%/°C, and \u0000<inline-formula> <tex-math>$5.8times 10^{-2}$ </tex-math></inline-formula>\u0000%/°C for Mg, Mo, and Zn, respectively. At a constant temperature 25 °C, the effect of humidity variation from 10% to 90% on the resistance of the sensors was observed to be \u0000<inline-formula> <tex-math>$2.0times 10^{-5}$ </tex-math></inline-formula>\u0000%/relative humidity (RH), \u0000<inline-formula> <tex-math>$3.4times 10^{-2}$ </tex-math></inline-formula>\u0000%/RH, and \u0000<inline-formula> <tex-math>$5times 10^{-3}$ </tex-math></inline-formula>\u0000%/RH, respectively, for Mg, Mo, and Zn RTDs. Furthermore, the sensor’s response to mechanical strain was evaluated by bending the devices down to a 10-mm bending radius. In addition, the dissolution of the green RTDs in water allows the reusability of the substrate for a new fabrication batch, minimizing the amount of electronics waste generated. Through this study, a promising solution to environmental concerns, realizing is endowed for realizing temperature sensors, with applications in green and sustainable wearable systems is demonstrated.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 7","pages":"306-311"},"PeriodicalIF":0.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10670483","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142565576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate-All-Around Cylindrical Nanowire FET-Based Room Temperature Ammonia Sensor for Diagnostic Applications","authors":"Sukanya Ghosh;Lintu Rajan","doi":"10.1109/JFLEX.2024.3454561","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3454561","url":null,"abstract":"Demonstrated through this research is an inspection of gate-all-around (GAA) cylindrical nanowire field-effect transistor (NWFET), concentrating on its ammonia (NH3) sensing performance for diagnostic purposes under room temperature (RT). Apart from effectively minimizing the short-channel effects (SCEs) owing to the improved gate strength, this multigated structure elevates current driving capability and is compatible with regular complementary metal-oxide–semiconductor (CMOS) processes. A systematized investigation of the sensing behavior has been illustrated through effectual modifications in molybdenum (Mo) and ruthenium (Ru) catalytic metal gate work functions depending on the concentration of NH3 arriving at the metallic surface. A concentration-reliant in-depth inspection has been elucidated with respect to the electric field and transfer characteristics. The sensing potentiality of the proposed NWFET has been assessed under the target NH3 environment with reference to the transformation in distinguished parameters for, e.g., ON-current (\u0000<inline-formula> <tex-math>$I_{text {ON}}$ </tex-math></inline-formula>\u0000), OFF-current (\u0000<inline-formula> <tex-math>$I_{text {OFF}}$ </tex-math></inline-formula>\u0000), transconductance (gm), subthreshold slope (SS), threshold voltage (\u0000<inline-formula> <tex-math>$V_{text {TH}}$ </tex-math></inline-formula>\u0000), and so on., using the ATLAS simulator. The optimally constructed ammonia sensor demonstrates excellent \u0000<inline-formula> <tex-math>$I_{text {ON}}$ </tex-math></inline-formula>\u0000/\u0000<inline-formula> <tex-math>$I_{text {OFF}}$ </tex-math></inline-formula>\u0000 ratios of approximately \u0000<inline-formula> <tex-math>${sim }{{10}}^{{8}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${sim }{{10}}^{{9}}$ </tex-math></inline-formula>\u0000 significant \u0000<inline-formula> <tex-math>$I_{text {OFF}}$ </tex-math></inline-formula>\u0000 sensing responses of \u0000<inline-formula> <tex-math>${sim }{2.32} times {{10}}^{{2}}$ </tex-math></inline-formula>\u0000 and \u0000<inline-formula> <tex-math>${sim }{1.28} times {{10}}^{{2}}$ </tex-math></inline-formula>\u0000, large \u0000<inline-formula> <tex-math>$text {g}_{text {m}}$ </tex-math></inline-formula>\u0000 sensing outcomes of 99.90% and 99.67%, significant SS sensing outputs (\u0000<inline-formula> <tex-math>$S_{text {SS}}$ </tex-math></inline-formula>\u0000) of ~83% and ~62.5%, better threshold voltage sensing responses (\u0000<inline-formula> <tex-math>$S_{text {VTH}}$ </tex-math></inline-formula>\u0000) of ~52.3% and ~34.4%, respectively, for Mo and Ru metallic gates under 1.04-ppm NH3 concentration at RT. The operation of the proposed GAA NWFET in the subthreshold region at RT makes it a promising candidate in terms of low power consumption and cost-effectiveness.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 9","pages":"418-425"},"PeriodicalIF":0.0,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Silicon: Status, Opportunities, and Challenges","authors":"Nikitha Kannan;Navneet Gupta","doi":"10.1109/JFLEX.2024.3453779","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3453779","url":null,"abstract":"The rise of the Internet of Everything has spurred the need for flexible and stretchable electronic devices, particularly in biomedical applications. Monocrystalline silicon, a key material in the semiconductor industry, must be adapted to meet these demands. This article explores various thinning techniques to fabricate flexible silicon wafers, methods for transferring silicon to flexible substrates, and the importance of enhancing silicon’s stretchability. Furthermore, it discusses the impact of flexible silicon on sectors such as biomedical sensing, electronics, and power systems, highlighting the role of the Internet of Things (IoT) platform in interconnecting devices. Finally, this article examines current progress and future prospects in flexible silicon technology, paving the way for further advancements in this rapidly evolving field.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 10","pages":"436-444"},"PeriodicalIF":0.0,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663398","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143107218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"IEEE Journal on Flexible Electronics Publication Information","authors":"","doi":"10.1109/JFLEX.2024.3440811","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3440811","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643438","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Guest Editorial: Special Issue of Selected Extended Papers From the International Flexible Electronics Technology Conference (IFETC) 2023","authors":"Samar Saha;Tse Nga Ng;Nazek El-Atab;Siddhartha Panda;Joseph S. Chang;Sanjiv Sambandan;Bikram Mahajan;Luca Catarinucci;Muhammad Mustafa Hussain","doi":"10.1109/JFLEX.2024.3438309","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3438309","url":null,"abstract":"This issue of the IEEE Journal on Flexible Electronics (J-FLEX) presents the Special Section containing eight revised and extended versions of selected papers presented at the 5th IEEE International Flexible Electronics Technology Conference (IFETC) 2023 held at the DoubleTree by Hilton Hotel in San Jose, CA, USA during August 13–16, 2023.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"224-227"},"PeriodicalIF":0.0,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10643429","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wearable High-Performance MWCNTs/PDMS Nanocomposite-Based Triboelectric Nanogenerators for Haptic Applications","authors":"Suresh Nuthalapati;Aniket Chakraborthy;Injamamul Arief;Kamal Kumar Meena;Kushal Ruthvik Kaja;R. Rakesh Kumar;K. Uday Kumar;Amit Das;Mehmet Ercan Altinsoy;Anindya Nag","doi":"10.1109/JFLEX.2024.3446756","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3446756","url":null,"abstract":"Triboelectric nanogenerators (TENGs) are fast emerging as promising and potential energy harvesters. However, the performance of the polymer-based TENGs needs to be enhanced for haptic and wearable applications. In this work, we have designed and developed polydimethylsiloxane (PDMS) and multiwalled carbon nanotubes (MWCNTs)-based TENG for haptic applications. The unique electrical properties of the human body, which make it a suitable triboelectric material, were a critical factor in our design. The incorporation of MWCNTs enhanced the electrical properties of the nanocomposite, thereby increasing the performance of the TENG. To demonstrate the performance of the TENG under variable contact tapping forces and frequencies, the as-fabricated films were tested in vertical contact separation and single electrode modes. The TENG exhibited an open-circuit output voltage of ~249 V, a short-circuit current of \u0000<inline-formula> <tex-math>$sim 28.03~mu $ </tex-math></inline-formula>\u0000A, and a power density of 2.81 W/m2 at a matching load of 5.5 M\u0000<inline-formula> <tex-math>$Omega $ </tex-math></inline-formula>\u0000. The TENG exhibited an excellent, stable electrical performance for haptic applications. The TENG’s excellent performance was validated by the illumination of 30 blue and 120 red LEDs. Additionally, it was employed to power portable electronic devices. Therefore, these flexible and wearable TENGs with high performance are highly desirable for haptic applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 9","pages":"393-400"},"PeriodicalIF":0.0,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142844542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation and Modeling of Emerging Heterojunction Transistors: Toward Rational Design and Optimization","authors":"Hocheon Yoo;Ryoma Hayakawa;Yutaka Wakayama;Chang-Hyun Kim","doi":"10.1109/JFLEX.2024.3437369","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3437369","url":null,"abstract":"This review summarizes the recent progress in the simulation and modeling of two important types of thin-film heterojunction transistors. Both structures functionally rely on the formation of a lateral p-n junction inside a single source-to-drain channel. However, different extents of vertical overlap between the p- and n-type semiconductor films produce unique switching characteristics of the respective systems. Experimental evidences behind recent theoretical models and the predictive capabilities of these models are illustrated with published examples. Simulation results of multivalued logic (MVL) circuits built with these heterojunction transistors are also discussed to emphasize practical aspects of device modeling for circuit- and system-level optimization.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 11","pages":"492-501"},"PeriodicalIF":0.0,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143518843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}