IEEE Journal on Flexible Electronics最新文献_第7页

Advancements in Wearable Solar Cell Technology: Integrating Perovskites and Dye-Sensitized Cells 可穿戴太阳能电池技术的进步：整合包覆晶石和染料敏化电池

IEEE Journal on Flexible Electronics Pub Date : 2024-04-26 DOI: 10.1109/JFLEX.2024.3394388

Mukund Ayalasomayajula;Mohit Ravi Khurana;Vasanth Balakrishnan;Prince Shiva Chaudhary;Sourayan Basu Bal;Rishav Kumar Baranwal

{"title":"Advancements in Wearable Solar Cell Technology: Integrating Perovskites and Dye-Sensitized Cells","authors":"Mukund Ayalasomayajula;Mohit Ravi Khurana;Vasanth Balakrishnan;Prince Shiva Chaudhary;Sourayan Basu Bal;Rishav Kumar Baranwal","doi":"10.1109/JFLEX.2024.3394388","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3394388","url":null,"abstract":"The surge in wearable technology demands a sustainable power source to meet its impending growth. With billions of connected devices and escalating CO2 emissions, integrating solar energy into wearables emerges as a critical solution. While conventional solar cells have made strides, adapting them to wearable tech remains a challenge due to their limited flexibility. Silicon-based cells, the most efficient currently, face hurdles in achieving both flexibility and durability. Emerging solar cell types like organic photovoltaics (OPVs), perovskite-based, dye-sensitized, and quantum dot cells show promise for wearables, but each comes with integration complexities and material selection intricacies. This article delves into the intricacies of solar cell integration into wearable tech, specifically focusing on perovskites and dye-sensitized solar cells due to their compatibility with current wearable technology. Exploring their design, operational mechanisms, and material adaptations, this article highlights advancements, challenges, and the need for a delicate balance between mechanical flexibility and industrial feasibility in creating market-ready wearable solar technology.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 5","pages":"205-213"},"PeriodicalIF":0.0,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dataset of Perovskite Memristive Current–Voltage Characteristics for Pattern Recognition 用于模式识别的 Perovskite 膜电流-电压特性数据集

IEEE Journal on Flexible Electronics Pub Date : 2024-04-18 DOI: 10.1109/JFLEX.2024.3390671

George Psaltakis;Konstantinos Rogdakis;Konstantinos Chatzimanolis;Emmanuel Kymakis

{"title":"Dataset of Perovskite Memristive Current–Voltage Characteristics for Pattern Recognition","authors":"George Psaltakis;Konstantinos Rogdakis;Konstantinos Chatzimanolis;Emmanuel Kymakis","doi":"10.1109/JFLEX.2024.3390671","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3390671","url":null,"abstract":"The ever-increasing number of Internet-of-Thing devices requires the development of edge-computing platforms to address the associated demand for big data processing at low power consumption while minimizing cloud communication latency. Neuromorphic computation is a viable solution to avoid an unsustainable energy cost; however, achieving stable memristive switching is a complex process. Mixed halide perovskite resistive memories are a promising technology that usually requires an extensive experimental characterization procedure till a stable operation mode is reached, resulting in an abundance of data that need to be manually processed. In this study, we create a dataset for pattern recognition based on thousands of images of experimental current–voltage (I–V) characteristics of solution-processed, and thus printable, mixed halide perovskite memristors. We have categorized our experimental data into seven distinct categories of memristive behavior depending on the shape of the I–V curves. A machine learning (ML) approach is implemented using a convolutional neural network (CNN) trained using this image-based dataset. After the training phase, the CNN is able to categorize any new experimental I–V across the seven generic types, while a binary categorization process by splitting the experimental data into those exhibiting good or bad switching characteristics is demonstrated with validation accuracies of up to 91%. Overall, it is shown that this ML-based pattern recognition approach can assist in identifying how many of the tested memristive devices exhibit stable, optimum switching dynamics, and upon expanding the model, it could predict which characterization parameters are most influential toward achieving an efficient device operation.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 8","pages":"363-367"},"PeriodicalIF":0.0,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Generalized Rapid TFT Modeling (GRTM) Framework for Agile Device Modeling With Thin-Film Transistors 针对薄膜晶体管敏捷器件建模的通用快速 TFT 建模 (GRTM) 框架

IEEE Journal on Flexible Electronics Pub Date : 2024-04-03 DOI: 10.1109/JFLEX.2024.3384934

Longfan Li;Jun Li;Changyan Chen;Yuhang Zhang;Jian Zhao;Yongfu Li;Xiaojun Guo

{"title":"Generalized Rapid TFT Modeling (GRTM) Framework for Agile Device Modeling With Thin-Film Transistors","authors":"Longfan Li;Jun Li;Changyan Chen;Yuhang Zhang;Jian Zhao;Yongfu Li;Xiaojun Guo","doi":"10.1109/JFLEX.2024.3384934","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3384934","url":null,"abstract":"This article introduces the generalized rapid thin-film-transistor (TFT) modeling (GRTM) framework, an innovative approach using deep learning (DL) techniques for efficient and accurate modeling and generation of Verilog-A code of TFT devices. Traditional TFT modeling methods, such as physics-based and lookup table (LUT)-based models, often involve complex, manual parameter tuning and struggle with generalizability across different device types. The GRTM framework streamlines the modeling process by leveraging DL algorithms to automatically learn from input datasets, significantly reducing human effort in parameter extraction and fitting. Thus, a new aspect of GRTM is its compatibility with commercial SPICE simulators, achieved by converting DL models into Verilog-A SPICE code. The framework’s efficacy is demonstrated through its application to low-temperature polysilicon (LTPS) TFT devices, showing a fourfold increase in accuracy and a substantial reduction in model development time compared with conventional physics-based models. The performance and features of the GRTM framework are compared with existing methods, highlighting its potential to revolutionize TFT device modeling.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 5","pages":"190-196"},"PeriodicalIF":0.0,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Performance Er-Doped ZnO (EZO)/WSe₂ Heterostructure-Based Wideband Photodetector 基于掺铒氧化锌 (EZO)/WSe₂ 异质结构的高性能宽带光电探测器

IEEE Journal on Flexible Electronics Pub Date : 2024-04-03 DOI: 10.1109/JFLEX.2024.3384944

Tulika Bajpai;Ajay Kumar Dwivedi;R. K. Nagaria;Shweta Tripathi

{"title":"High Performance Er-Doped ZnO (EZO)/WSe₂ Heterostructure-Based Wideband Photodetector","authors":"Tulika Bajpai;Ajay Kumar Dwivedi;R. K. Nagaria;Shweta Tripathi","doi":"10.1109/JFLEX.2024.3384944","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3384944","url":null,"abstract":"This article reports Al/Erbium-doped ZnO/WSe2/ITO-coated polyethylene terephthalate (PET) structure-based wideband photodetector. The EZO and WSe2 are deposited using spin coating method, whereas, Al contacts were deposited over EZO layer using thermal evaporation technique. The p-type tungsten di-selenide (WSe2) layer deposited over indium tin oxide (ITO) coated PET substrate forms a heterojunction with n-type Erbium-doped ZnO (EZO) layer. The photodetector performance parameters like responsivity, external quantum efficiency (EQE), specific detectivity, and sensitivity were calculated at fixed power of 0.118 \u0000<inline-formula> <tex-math>$mu text{w}$ </tex-math></inline-formula>\u0000 and at 2 V bias. The proposed device shows a very high EQEs/responsivity \u0000<inline-formula> <tex-math>$R_{s}$ </tex-math></inline-formula>\u0000 (A/W) of \u0000<inline-formula> <tex-math>$2.26 times 10^{4}$ </tex-math></inline-formula>\u0000%/72.90, \u0000<inline-formula> <tex-math>$6.3 times 10^{3}$ </tex-math></inline-formula>\u0000%/30.60, and \u0000<inline-formula> <tex-math>$1.52 times 10^{3}$ </tex-math></inline-formula>\u0000%/14.10 at 400 nm (UV), 600 nm (visible), and 1150 nm (NIR), respectively, under 2-V bias. Furthermore, the proposed photodetector behaves as a self-powered detector for normal as well as circularly polarized light (CPL). The proposed photodetector may find its application in optoelectronics for broadband detection and polarization sensors.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 5","pages":"214-220"},"PeriodicalIF":0.0,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141965447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Laser Sintering Direct Ink Write Silver Nanoflake Ink for On-Demand Manufacturing of Electronics in Space 用于按需制造太空电子产品的激光烧结直接写入纳米银墨水

IEEE Journal on Flexible Electronics Pub Date : 2024-04-02 DOI: 10.1109/JFLEX.2024.3384331

Ellie Schlake;Nirmala Kandadai

{"title":"Laser Sintering Direct Ink Write Silver Nanoflake Ink for On-Demand Manufacturing of Electronics in Space","authors":"Ellie Schlake;Nirmala Kandadai","doi":"10.1109/JFLEX.2024.3384331","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3384331","url":null,"abstract":"Developing manufacturing methods for flexible electronics will enable and improve the large-scale production of flexible, spatially efficient, and lightweight devices. Laser sintering is a promising postprocessing method to produce consolidated films for flexible electronic devices while reducing power consumption compared to standard thermal sintering. This work further explores laser sintering of direct ink write (nScrypt) printed silver as a continuation of previous studies on nScrypt-printed silver and aerosol jet-printed gold, platinum, and titanium dioxide for manufacturing printed electronics (PEs) on the International Space Station (ISS). Four different laser wavelengths are studied for laser sintering nScrypt silver nanoflake ink on flexible polyimide and rigid glass substrates. The laser systems investigated are continuous wave (CW) 808 nm, CW 445 nm, CW 1064 nm, and pulsed femtosecond (fs) 1040-nm lasers. The laser power and scanning speed are varied to compare the laser systems and optimize laser sintering parameters for the silver ink. The resistivity of the laser-sintered silver NPs is compared to the resistivity of the unsintered silver to demonstrate the effectiveness of laser sintering. An optimal resistivity of \u0000<inline-formula> <tex-math>$5.81times 10^{-8},,Omega cdot text{m}$ </tex-math></inline-formula>\u0000 is achieved for the nScrypt silver laser sintered using a fs 1040-nm laser.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"242-251"},"PeriodicalIF":0.0,"publicationDate":"2024-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10488399","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma Jet Printing of Diamond and Silicon 钻石和硅的等离子喷射打印

IEEE Journal on Flexible Electronics Pub Date : 2024-04-02 DOI: 10.1109/JFLEX.2024.3384330

Pranay Doshi;Zhou Li;Fabian Langer;Daniel H. Gutierrez;Niels Benson;Dennis Nordlund;Debbie G. Senesky;Ram P. Gandhiraman

引用次数: 0

IEEE Journal on Flexible Electronics Publication Information 电气和电子工程师学会柔性电子学报》出版信息

IEEE Journal on Flexible Electronics Pub Date : 2024-04-01 DOI: 10.1109/JFLEX.2024.3369264

引用次数: 0

IEEE Journal on Flexible Electronics Call for Papers: Cross Society Special Issue (ISCAS & IFETC) on Flexible Hybrid Electronics: Advancing Next-Generation Applications IEEE 柔性电子学报》征稿：跨学会特刊（ISCAS 和 IFETC）：柔性混合电子技术：推动下一代应用

IEEE Journal on Flexible Electronics Pub Date : 2024-04-01 DOI: 10.1109/JFLEX.2024.3419825

引用次数: 0

Guest Editorial Special Issue on Self-Powered Sensors and Wearable Electronic Systems 自供电传感器和可穿戴电子系统》特刊客座编辑

IEEE Journal on Flexible Electronics Pub Date : 2024-04-01 DOI: 10.1109/JFLEX.2024.3408001

Anindya Nag;Oliver Ozioko;Woo Soo Kim;Joseph Andrews

{"title":"Guest Editorial Special Issue on Self-Powered Sensors and Wearable Electronic Systems","authors":"Anindya Nag;Oliver Ozioko;Woo Soo Kim;Joseph Andrews","doi":"10.1109/JFLEX.2024.3408001","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3408001","url":null,"abstract":"Wearable sensing has recently been highly preferred due to its quick and accurate measurement of physiological parameters. These sensors have been devised using various polymers \u0000<xref>[1]</xref>\u0000, \u0000<xref>[2]</xref>\u0000 and nanomaterials \u0000<xref>[3]</xref>\u0000, \u0000<xref>[4]</xref>\u0000 suited for the chosen application. With the exponential growth of wearable electronics \u0000<xref>[5]</xref>\u0000, \u0000<xref>[6]</xref>\u0000, \u0000<xref>[7]</xref>\u0000, there is a need to broaden their capabilities in terms of functionality and availability. Commercializing these wearable electronics needs further encouragement to use these sensors as point-of-care devices. Self-powered sensors \u0000<xref>[8]</xref>\u0000, \u0000<xref>[9]</xref>\u0000 are one of the growing aspects in the sector of wearable sensing. With the growing requirement for energy usage, self-powered sensing systems need to be developed to generate and harvest energy ubiquitously \u0000<xref>[10]</xref>\u0000, \u0000<xref>[11]</xref>\u0000. This Special Issue highlights some of the published papers that work on using smart textiles and self-powered devices for efficient and sustainable sensing applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 4","pages":"118-119"},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10584438","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Selected Papers from the IEEE International Conference on Flexible, Printable, Sensors and Systems (FLEPS 2024) IEEE 柔性电子学报》征稿：电气和电子工程师学会柔性、可印刷、传感器与系统国际会议 (FLEPS 2024) 论文选特刊

IEEE Journal on Flexible Electronics Pub Date : 2024-04-01 DOI: 10.1109/JFLEX.2024.3419826

引用次数: 0