Victor Toral;Yann Houeix;Denice Gerardo;Isabel Blasco-Pascual;Almudena Rivadeneyra;Francisco J. Romero
{"title":"Graphene-Enabled Wearable for Remote ECG and Body Temperature Monitoring","authors":"Victor Toral;Yann Houeix;Denice Gerardo;Isabel Blasco-Pascual;Almudena Rivadeneyra;Francisco J. Romero","doi":"10.1109/JFLEX.2024.3405895","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3405895","url":null,"abstract":"This article presents a comprehensive study on the synthesis, characterization, and integration of laser-synthetized graphene-based materials in a wearable device for noninvasive physiological monitoring. Laser-induced graphene (LIG) and laser-reduced graphene oxide (LrGO) materials are synthesized and characterized under different techniques to analyze and compare their structural and chemical properties, including scanning electron microscopy (SEM), micro-Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). These materials are used afterward for the fabrication of temperature sensors, micro-supercapacitors (MSCs), and electrocardiogram (ECG) electrodes. In particular, the temperature dependence of the electrical conductivity of LrGO is exploited for the fabrication of temperature-dependent resistors with a sensitivity of −1.23 k\u0000<inline-formula> <tex-math>$Omega cdot ^{circ }$ </tex-math></inline-formula>\u0000C1, which are used as body temperature sensors after being encapsulated into polydimethylsiloxane (PDMS) to increase their linearity and immunity to humidity changes. Moreover, both MSCs and ECG electrodes are developed by leveraging the highly porous structure of LIG, demonstrating a good electrochemical and ECG acquisition performance. Furthermore, a wearable device is designed and fabricated integrating these graphene-based components in a rigid-flex printed circuit board (PCB) together with a Bluetooth low energy (BLE) microcontroller, thus enabling the wireless transmission of the physiological data to external monitoring devices. The power consumption has been optimized for extended battery life, allowing continuous monitoring over prolonged periods. Overall, this study demonstrates the feasibility and effectiveness of integrating graphene-based materials into real wearable applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 4","pages":"159-168"},"PeriodicalIF":0.0,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10539611","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Basic Logic Gates and Digital Circuits Based on Flexible IGZO Enhancement-Mode nMOS TFTs","authors":"Pamela Gianna Olguín-Leija;Pablo Gilberto Toledo Guizar;Isai Salvador Hernandez Luna;Arturo Torres Sánchez;Rodolfo García;Norberto Hernandez-Como","doi":"10.1109/JFLEX.2024.3408135","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3408135","url":null,"abstract":"An increasing number of new applications beyond displays have been reported for amorphous oxide semiconductors, especially indium-gallium–zinc oxide (IGZO), based on flexible thin-film transistors (TFTs). The atomic composition of the IGZO target was In:Ga:Zn = 2:2:2. From sensors to microprocessors, the flexible IGZO TFTs aim to diversify the functionality of silicon legacy nodes. In this work, IGZO enhancement-mode nMOS TFTs, with a minimum channel length of <inline-formula> <tex-math>$5 , mu $ </tex-math></inline-formula>m, were fabricated on flexible polyimide (PI) substrates at temperatures below 150 °C. We observed a small dependency of threshold voltage (<inline-formula> <tex-math>$2.23 , pm , 0.06$ </tex-math></inline-formula> V) and saturation mobility (<inline-formula> <tex-math>$3.74 , pm , 0.57$ </tex-math></inline-formula> cm2/V <inline-formula> <tex-math>$cdot $ </tex-math></inline-formula> s) with the channel width-to-length ratio. The IGZO TFTs were interconnected in the saturation load configuration for the successful demonstration of basic logic gates (inverter, NAND, and NOR gates), a seven-stage ring oscillator, an xor gate, and a half-adder. Due to this configuration, their output voltage was limited to VDD–VTH. Their electrical response was evaluated with direct and alternating voltages at a maximum input frequency of 500 Hz and a power supply of 5 V. Under ac analysis, their fall time/rise time were in the 3-43/148-212-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>s range. The inverter, as the fundamental building block for digital circuits, was also tested at different bending radii from 10 to 2.5 mm. Our results are oriented to a better understanding of the flexible IGZO TFT technology to reach reliable integrated circuits (ICs).","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 11","pages":"466-471"},"PeriodicalIF":0.0,"publicationDate":"2024-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohamed Y. Abdelatty;Mohammed Alhendi;Abdullah S. Obeidat;Ashraf Umar;Emuobosan Enakerakpo;Riadh Al-Haidari;Mark D. Poliks
{"title":"Empirical Model and Experimental Validation of Meshed Ground Impact on RF Performance of Flexible Microstrip Lines for Bending Applications","authors":"Mohamed Y. Abdelatty;Mohammed Alhendi;Abdullah S. Obeidat;Ashraf Umar;Emuobosan Enakerakpo;Riadh Al-Haidari;Mark D. Poliks","doi":"10.1109/JFLEX.2024.3406498","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3406498","url":null,"abstract":"Meshing of conventional printed circuit board (PCB) grounds refers to a process in which certain ground planes appear as copper lattices; regular openings are placed at regular intervals. The need for ground meshing for rigid PCBs has become minor with the development of micro-etching approaches. However, for flexible hybrid electronics (FHEs), meshed grounds could offer some benefits, such as being unsusceptible to bending and conserving material and time. In this article, we study how meshed ground planes affect the radio frequency (RF) performance of straight microstrip lines. Simulations show meshed grounds with more than 50% filling produce good RF performance. When the filling percentage of the meshed grounds is less than 50%, ripples in the insertion loss start to appear. To confirm the simulation results, dispensing and aerosol jet printing (AJP) systems were used to fabricate silver ink microstrip lines on PET substrates with different meshed ground patterns. The experimental measurement confirmed the simulation results. Bend testing was carried out to investigate the impact of mesh grounds on the RF performance of the microstrip lines after bending. The results demonstrate that the less-filled meshed ground samples are less susceptible to bending. As an extension of the work, we developed an empirical model to modify the microstrip line’s width to smoothen the insertion loss ripples while maintaining the bending superiority. To experimentally validate the model, predictions from this empirical model were used to fabricate and measure some samples.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 8","pages":"374-382"},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Padmanabh Pundrikaksha Pancham;Anupam Mukherjee;Boong Lek Yuan;Cheng-Han Tsai;Peichen Yu;Cheng-Yao Lo
{"title":"Integrated Pressure and Proximity Sensors on Silicone and PU Substrates That Supports Flexible Hybrid Electronics","authors":"Padmanabh Pundrikaksha Pancham;Anupam Mukherjee;Boong Lek Yuan;Cheng-Han Tsai;Peichen Yu;Cheng-Yao Lo","doi":"10.1109/JFLEX.2024.3406288","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3406288","url":null,"abstract":"In this work, we demonstrate an integrated, simple, yet highly sensitive parallel-plate and co-planar capacitive pressure sensors on a silicone-based composite substrate that addresses the issue of low surface energy (LSE) of silicone. The composite substrate exhibited flexibility and appropriate bonding strength after high-temperature vulcanization. Meanwhile, by utilizing deionized water in dielectric mixture (10%–30%), micropores in different sizes and distributions in the dielectric were realized as a novel solution to enhance its flexibility and thus its sensitivity. The parallel-plate pressure capacitor exhibited adjustable detection sensitivity between 5.3 and 6.6 kPa-1 and the highest sensitivity outperformed existing demonstrations in literature with large dynamic window between 0.05 and 83.3 kPa with a resolution of 0.05 kPa and a response time of 0.25 s. On the other hand, the co-planar proximity sensor showed supportiveness on real-time detection, exhibiting a multifunctional sensing system together with the parallel-plate pressure sensor. Related design, fabrication, evaluation, and discussion were thoroughly conducted in this work.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"259-265"},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142044326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jeneel Pravin Kachhadiya;Hridyesh Tewani;Pavana Prabhakar;Joesph B. Andrews
{"title":"Fabrication Techniques for Multilayer Printed Flexible Hybrid Sensor Systems","authors":"Jeneel Pravin Kachhadiya;Hridyesh Tewani;Pavana Prabhakar;Joesph B. Andrews","doi":"10.1109/JFLEX.2024.3404363","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3404363","url":null,"abstract":"Additive manufacturing holds the potential to revolutionize circuit fabrication and enable the widespread adoption of printed electronics, particularly in flexible applications, such as wearable or conformable electronic sensing systems. However, realizing practical circuits with multilayer interconnects or vertical interconnect accesses (VIAs) using additive methods, flexible substrates pose significant challenges. In this study, we systematically evaluate four different methods for fabricating VIAs in flexible printed circuits: soldered, printed, conductive epoxy, and zero-ohm jumper VIAs. Through comprehensive testing involving various levels of bending strains, we measure changes in conductive properties and mechanical integrity to validate each method. Our results indicate that printed VIAs exhibit the most desirable properties compared to other methods, with a baseline resistance of approximately \u0000<inline-formula> <tex-math>$0.9~Omega $ </tex-math></inline-formula>\u0000 and a change of approximately 7% when subjected to a bending radius of 12 mm. Additionally, cyclic bending tests and tensile strength test were exclusively carried out on the printed VIAs to evaluate their resilience under bending and tensile strains. Leveraging the superior performance of printed VIAs, we successfully manufacture a fully conformable impact sensing system capable of adhering to a sports ball, thereby demonstrating their effectiveness in practical applications. This study underscores the utility and potential of multilayer flexible PCB fabrication using additive printing technology, highlighting its significance in advancing the development of innovative electronic systems with enhanced flexibility and reliability. The findings presented herein offer valuable insights into the optimization of VIA fabrication methods and their implications for the design and deployment of flexible electronic devices in diverse real-world scenarios.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 5","pages":"181-189"},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141964722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Perspective on Organic Bipolar Transistors","authors":"Shu-Jen Wang;Karl Leo","doi":"10.1109/JFLEX.2024.3404366","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3404366","url":null,"abstract":"The demonstration of organic bipolar transistor in 2022 completed the missing puzzle in the organic transistor development roadmap. The major obstacle was that the typical amorphous organic semiconductors could not offer high enough carrier mobility to allow sufficiently long minority carrier diffusion length, which is central to bipolar transistor operation. The use of epitaxially grown rubrene with doping together with a novel vertical transistor architecture helps to overcome the carrier mobility challenge and lays the foundation for operational bipolar transistor. Bipolar transistors based on crystalline rubrene exhibit high-speed operation in the gigahertz range and allow direct measurement of minority carrier diffusion. In this perspective, we discuss important aspects in terms of device design and materials for further advances in organic bipolar transistor device performance. We also point out emerging device concepts, such as organic heterojunction bipolar transistor and phototransistor, that could stem out from organic bipolar transistor development and cover further work necessary.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 11","pages":"472-476"},"PeriodicalIF":0.0,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10536095","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143521536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Design and Characterization of High Quality-Factor Inductors for Wireless Systems Compatible With Flexible Large-Area Electronics","authors":"Yue Ma;Sigurd Wagner;Naveen Verma;James C. Sturm","doi":"10.1109/JFLEX.2024.3379975","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3379975","url":null,"abstract":"Resonant operation, exploiting high quality-factor planar inductors, has recently enabled gigahertz (GHz) applications for large-area electronics (LAE), providing a new technology platform for large-scale and flexible wireless systems. This work first presents the design, analysis, and characterization methodology of flex-compatible large-area planar inductors. Specifically, three distinct radio frequency (RF) inductor characterization methods are experimentally demonstrated and compared, with the most accurate method among them (i.e., \u0000<inline-formula> <tex-math>$S$ </tex-math></inline-formula>\u0000-parameters in a two-port configuration) demonstrating a record-high quality factor of up to \u0000<inline-formula> <tex-math>$sim 65$ </tex-math></inline-formula>\u0000 in the 2.4-GHz frequency band. Enabled by accurate characterization, key inductor design considerations regarding the resistive loss due to inductor’s metal traces are then discussed. Finally, a case study of the recently demonstrated LAE resonant switch shows the potential of these high-performance inductors towards large-area and conformal wireless systems for integrated Internet of Things (IoT) and 5G/6G applications.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"234-241"},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10477409","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142021600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Circular, Sustainable, and Green Electronics","authors":"","doi":"10.1109/JFLEX.2024.3375618","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3375618","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 3","pages":"116-116"},"PeriodicalIF":0.0,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10472874","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140135194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Direct IEEE IFETC Publications","authors":"","doi":"10.1109/JFLEX.2024.3375616","DOIUrl":"https://doi.org/10.1109/JFLEX.2024.3375616","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 3","pages":"115-115"},"PeriodicalIF":0.0,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10472912","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140135247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}