IEEE Journal on Flexible Electronics最新文献

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IEEE Journal on Flexible Electronics Publication Information IEEE柔性电子出版信息杂志
IEEE Journal on Flexible Electronics Pub Date : 2025-10-07 DOI: 10.1109/JFLEX.2025.3615261
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引用次数: 0
IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Memristor Technology: From Circuit Theory to Device Physics and Applications IEEE柔性电子学杂志:专题:忆阻器技术:从电路理论到器件物理与应用
IEEE Journal on Flexible Electronics Pub Date : 2025-10-07 DOI: 10.1109/JFLEX.2025.3612550
{"title":"IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Memristor Technology: From Circuit Theory to Device Physics and Applications","authors":"","doi":"10.1109/JFLEX.2025.3612550","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3612550","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 8","pages":"360-360"},"PeriodicalIF":0.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11195954","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transformation of Artistic Drawings Into WLAN-Band Wearable Antennas 艺术图纸在无线局域网可穿戴天线中的转换
IEEE Journal on Flexible Electronics Pub Date : 2025-09-30 DOI: 10.1109/JFLEX.2025.3615904
Muhammad M. Tahseen;Barbara Layne;Ahmed A. Kishk
{"title":"Transformation of Artistic Drawings Into WLAN-Band Wearable Antennas","authors":"Muhammad M. Tahseen;Barbara Layne;Ahmed A. Kishk","doi":"10.1109/JFLEX.2025.3615904","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3615904","url":null,"abstract":"A novel concept of transforming complex and artistic geometries into antennas in the wireless local area network (WLAN) band is presented. Four artistic antennas are designed in the Wi-Fi band and measured. All antennas are based on the microstrip antenna concept. To be flexible for wearable applications, the antennas are embroidered on the textile material using conductive thread. Based on the composition of the textile material and its properties, some of the textile samples are finalized from several samples under test (SUTs), which are further used in the antenna design. The dielectric constant of the SUT is extracted using the resonance technique. The solid copper ground (GND) plane is made of shielded fabric, which provides the required flexibility. A low-power short-range Wi-Fi band communication system is designed for testing the transmission and reception authentication from the antennas embedded on several dresses. The simulated and measured performance of the antennas in terms of matching bandwidth, realized gain, radiation efficiency, and radiation patterns is presented, which shows good agreement (evaluated at 2.45 GHz).","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 12","pages":"437-445"},"PeriodicalIF":0.0,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145674879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Pilot Human Study on Dual Photoplethysmography for Continuously Monitoring Pulse Wave Velocity and Blood Pressure 连续监测脉搏波速度和血压的双光容积脉搏波描记仪人体试验研究
IEEE Journal on Flexible Electronics Pub Date : 2025-09-25 DOI: 10.1109/JFLEX.2025.3614515
Tien Nguyen;Sai Satvik Kolla;Henry Wang;Hannah Weisbecker;Braden Messersmith;Daniela Beatriz Martinez Leal;Roshan Kuntamukkala;Yihan Liu;Erik D. Hanson;Craig Paterson;Aiden J. Chauntry;Wubin Bai
{"title":"A Pilot Human Study on Dual Photoplethysmography for Continuously Monitoring Pulse Wave Velocity and Blood Pressure","authors":"Tien Nguyen;Sai Satvik Kolla;Henry Wang;Hannah Weisbecker;Braden Messersmith;Daniela Beatriz Martinez Leal;Roshan Kuntamukkala;Yihan Liu;Erik D. Hanson;Craig Paterson;Aiden J. Chauntry;Wubin Bai","doi":"10.1109/JFLEX.2025.3614515","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3614515","url":null,"abstract":"Hypertension is a leading contributor to cardiovascular disease (CVD), stroke, and chronic kidney disease worldwide. However, current blood pressure (BP) monitoring techniques, whether auscultatory, oscillometric, or invasive, are constrained by episodic measurement, user variability, and limited feasibility for real-world, continuous monitoring. These limitations hinder early detection of abnormal BP patterns and long-term cardiovascular risk assessment. This article presents a noninvasive device based on dual-site photoplethysmography (PPG) signals, with calculated pulse wave velocity (PWV), that combines off-the-shelf sensors with an infrared-based dual-PPG sensor. The device combines PPG signals and physiological measurements to predict BP comprehensively using machine learning, with initial trials on 25 participants demonstrating promising accuracy with mean differences of 1.1 mmHg for systolic BP (SBP), −0.9 mmHg for diastolic BP (DBP), and −0.2 mmHg for mean arterial pressure (MAP) compared to standard measurements with the Vicorder device. While primarily tested on a young population, the device shows potential for continuous, real-world BP and PWV monitoring, offering greater usability and accessibility than traditional tonometry- and oscillometry-based devices.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 11","pages":"422-428"},"PeriodicalIF":0.0,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145442751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Patterning Electrodes by Impact Deposition of a Single Liquid Metal Alloy Droplet 单一液态金属合金液滴冲击沉积电极图案化
IEEE Journal on Flexible Electronics Pub Date : 2025-09-23 DOI: 10.1109/JFLEX.2025.3613294
S. Chinmay;K. S. Narayan
{"title":"Patterning Electrodes by Impact Deposition of a Single Liquid Metal Alloy Droplet","authors":"S. Chinmay;K. S. Narayan","doi":"10.1109/JFLEX.2025.3613294","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3613294","url":null,"abstract":"We introduce methods for fabricating patterned, large-area, detachable alloy electrodes. The techniques harness droplet impact deposition and a postprocessing strategy to realize flexible micrometer-thick alloy electrode films of area ranging from a few square millimeters to several square centimeters. The methods are best suited for ductile eutectic alloys with Indium–Bismuth content. Further, we demonstrate free-standing reusable electrode films with simply connected and complex geometries that are relevant for wide variety of applications in electronics.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 11","pages":"429-435"},"PeriodicalIF":0.0,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145442735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and Characterization of Large Area Flexible Capacitive Pressure Sensors Using PDMS Foam and Functionalized Textile PDMS泡沫和功能化纺织品制备大面积柔性电容式压力传感器及性能研究
IEEE Journal on Flexible Electronics Pub Date : 2025-09-22 DOI: 10.1109/JFLEX.2025.3612874
Saurabh B. Mishra;Nazek El-Atab;Aftab M. Hussain
{"title":"Fabrication and Characterization of Large Area Flexible Capacitive Pressure Sensors Using PDMS Foam and Functionalized Textile","authors":"Saurabh B. Mishra;Nazek El-Atab;Aftab M. Hussain","doi":"10.1109/JFLEX.2025.3612874","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3612874","url":null,"abstract":"Flexible capacitive pressure sensors have simple sensing structure, zero-temperature drift, linear response, and high sensitivity, leading to applications in human healthcare, including soft and surgical robotics, human–machine interaction (HMI), and wearable devices. In this article, we present a highly compressible multilayer flexible capacitive pressure sensor based on air/vapor bubble-induced polydimethylsiloxane (PDMS) foam thin film as dielectric and polypyrrole (Ppy)-coated cotton textile as electrodes. An in situ chemical oxidative polymerization method was used to synthesize a conducting, large area Ppy-coated cotton textile. We used this as parallel electrodes on the top and bottom of the bubble-induced PDMS foam. The bubble-induced PDMS film was made by casting of PDMS, mixed with specific amounts of ethanol. The top and bottom textile electrodes were then attached to it with the help of silicone adhesive. We observed low hysteresis, high repeatability, and good step response in our sensor characterization. Bubble characterization was also performed, including surface profilometer and scanning electron microscopy (SEM). We showcase two applications of our sensor, including mouse click and grasping of a cup. The sensor can be fabricated in different shapes and sizes for various applications of free-form electronics such as soft and surgical robotics, wearable, biomedical, and human–machine interaction.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 11","pages":"414-421"},"PeriodicalIF":0.0,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145442736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An ECG Monitoring System Using SAR ADC on Flexible Foil With Oxide TFT Technology 基于氧化TFT技术的柔性箔SAR ADC心电监测系统
IEEE Journal on Flexible Electronics Pub Date : 2025-09-16 DOI: 10.1109/JFLEX.2025.3610362
Bhawna Tiwari;Vaishali Choudhary;Suyash Shrivastava;Pydi Ganga M. Bahubalindruni
{"title":"An ECG Monitoring System Using SAR ADC on Flexible Foil With Oxide TFT Technology","authors":"Bhawna Tiwari;Vaishali Choudhary;Suyash Shrivastava;Pydi Ganga M. Bahubalindruni","doi":"10.1109/JFLEX.2025.3610362","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3610362","url":null,"abstract":"This manuscript presents an electrocardiogram (ECG) monitoring system with charge redistribution noise-shaping successive approximation register analog to digital converter (CR-NS SAR ADC). The proposed system has successfully demonstrated an ECG reconstruction while preserving crucial parameters such as PR, QT, ST, QRS, RR interval, and heart rate, which are essential for analyzing ECG data. The ADC is designed using single-gate indium-gallium-zinc-oxide thin-film transistor (IGZO TFT) technology only with n-type TFTs and fabricated on a 30- <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick polyimide substrate. Further, this work has addressed circuit design challenges that arise due to only n-type transistor-based implementation. This ADC employs an energy efficient modified CR switching scheme, which utilizes merged capacitor switching (MCS) technique. Moreover, for the first time, first-order passive NS technique is experimented with this technology in the ADC. From measurements, this circuit shows a Walden figure-of-merit (<inline-formula> <tex-math>$text {FoM}_{text {W}}$ </tex-math></inline-formula>) of 13.8 nJ/c.s, Schreier FoM (<inline-formula> <tex-math>$text {FoM}_{text {S}}$ </tex-math></inline-formula>) of 98.298 dB, SNR of 39.23 dB, and ENOB of 6 bits. The proposed ADC operates up to a sampling frequency of 2.08 kHz with a power consumption of 1.85 mW at a supply voltage (<inline-formula> <tex-math>$V_{textrm {DD}}$ </tex-math></inline-formula>) of 4 V. This design is well suited for biomedical wearable devices because of its low-power operation and compatibility with flexible substrates.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 10","pages":"405-412"},"PeriodicalIF":0.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145374721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Threshold Voltage Instability and Dielectric Breakdown in Flexible Bottom-Gate Ti/Al2O3/IGZO Thin-Film Transistors 柔性底栅Ti/Al2O3/IGZO薄膜晶体管的阈值电压不稳定性和介电击穿
IEEE Journal on Flexible Electronics Pub Date : 2025-08-28 DOI: 10.1109/JFLEX.2025.3603550
Domenico De Rosis;Massimo Vatalaro;Vincenzo Maccaronio;Felice Crupi;Niko Münzenrieder;Federica Catania;Dianne Corsino;Giuseppe Cantarella;Luisa Petti;Raffaele De Rose
{"title":"Threshold Voltage Instability and Dielectric Breakdown in Flexible Bottom-Gate Ti/Al2O3/IGZO Thin-Film Transistors","authors":"Domenico De Rosis;Massimo Vatalaro;Vincenzo Maccaronio;Felice Crupi;Niko Münzenrieder;Federica Catania;Dianne Corsino;Giuseppe Cantarella;Luisa Petti;Raffaele De Rose","doi":"10.1109/JFLEX.2025.3603550","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3603550","url":null,"abstract":"This article explores the instability of threshold voltage (<inline-formula> <tex-math>${V} {_{textit {TH}}}$ </tex-math></inline-formula>) and dielectric breakdown in flexible n-type thin-film transistors (TFTs) featuring a bottom-gate Ti/Al<sub>2</sub>O<sub>3</sub>/indium–gallium–zinc-oxide (IGZO) structure. Measurements were performed in dark conditions at <inline-formula> <tex-math>$25~^{circ } $ </tex-math></inline-formula>C on a set of devices with the same channel width (<inline-formula> <tex-math>${W}=280~mu $ </tex-math></inline-formula>m) and different channel lengths (<italic>L</i>) ranging from 100 down to <inline-formula> <tex-math>$5~mu $ </tex-math></inline-formula>m. Regarding the <inline-formula> <tex-math>${V} {_{textit {TH}}}$ </tex-math></inline-formula> instability, both hysteresis (applying <inline-formula> <tex-math>${V} {_{textit {GS}}}$ </tex-math></inline-formula> from −1 to 5 V and vice versa) and positive gate bias stress (applying <inline-formula> <tex-math>${V} {_{text {GS}}}=5$ </tex-math></inline-formula> V for 1000 s) data show a positive <inline-formula> <tex-math>${V} {_{textit {TH}}}$ </tex-math></inline-formula> shift (<inline-formula> <tex-math>$Delta {V} {_{textit {TH}}}$ </tex-math></inline-formula>) ascribed to electron trapping at the channel/oxide interface or within the bulk oxide. Our study also demonstrates that in some devices, the stress-induced <inline-formula> <tex-math>$Delta {V} {_{textit {TH}}}$ </tex-math></inline-formula> is fully recovered by applying <inline-formula> <tex-math>${V} {_{textit {GS}}}=-2$ </tex-math></inline-formula> V for 1000 s as a result of releasing charges previously trapped during stress. Moreover, measurements highlight an increasing trend of both hysteresis- and stress-induced <inline-formula> <tex-math>$Delta {V} {_{text {TH}}}$ </tex-math></inline-formula> for shorter channel devices. Consistently, time-dependent dielectric breakdown data (applying <italic>V<sub>G</sub></i> = 11 V) indicate a faster process in smaller devices. Then, overall results show lower reliability in more scaled devices, thus proving that a key challenge for the investigated technology is to realize reliable short-channel TFTs.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 8","pages":"310-317"},"PeriodicalIF":0.0,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal on Flexible Electronics Publication Information IEEE柔性电子出版信息杂志
IEEE Journal on Flexible Electronics Pub Date : 2025-08-27 DOI: 10.1109/JFLEX.2025.3599303
{"title":"IEEE Journal on Flexible Electronics Publication Information","authors":"","doi":"10.1109/JFLEX.2025.3599303","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3599303","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 7","pages":"C2-C2"},"PeriodicalIF":0.0,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11142904","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Selected Papers from the IEEE International Conference on Flexible, Printable, Sensors and Systems (FLEPS 2025) IEEE柔性电子期刊征文:IEEE柔性、可打印、传感器和系统国际会议(FLEPS 2025)论文精选特刊
IEEE Journal on Flexible Electronics Pub Date : 2025-08-27 DOI: 10.1109/JFLEX.2025.3601451
{"title":"IEEE Journal on Flexible Electronics Call for Papers: Special Issue on Selected Papers from the IEEE International Conference on Flexible, Printable, Sensors and Systems (FLEPS 2025)","authors":"","doi":"10.1109/JFLEX.2025.3601451","DOIUrl":"https://doi.org/10.1109/JFLEX.2025.3601451","url":null,"abstract":"","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"4 7","pages":"293-293"},"PeriodicalIF":0.0,"publicationDate":"2025-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11142902","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144909118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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