{"title":"在溶胶凝胶衍生氧化铜上掺入碱金属以提高薄膜晶体管的性能","authors":"Seokhyeon Baek;Jun-Gyu Choi;Sungjun Park","doi":"10.1109/JFLEX.2024.3407687","DOIUrl":null,"url":null,"abstract":"In recent years, copper oxide (CuxO) has emerged as a promising p-type oxide semiconductor owing to its high Hall mobility. However, its inherent drawbacks, such as the substantial native defects and uncontrolled stoichiometry, limit its application in thin-film transistors (TFTs) for energy-efficient complementary devices. In this study, we employ the sol-gel synthetic approach for facile doping to investigate the doping effects of alkali metals (Li, Na, and K) on the electrical performance of CuxO TFTs. The results demonstrate that doping, particularly with lithium (Li), significantly improves the electrical performance of CuxO TFTs. The similarity in ionic radius facilitates efficient hole transport, which considerably enhances the field-effect mobility (\n<inline-formula> <tex-math>$4.7\\times 10^{-3}$ </tex-math></inline-formula>\n cm2/Vs), subthreshold swing (SS) (8.3 V/dec), and on-off current ratio (~104) with minimized hysteresis. The structural analysis of the Li-doped CuxO films using X-ray diffraction (XRD) does not exhibit any significant lattice distortion and an increase in the grain size implies the reduction of trap sites. Consequently, the successful fabrication of Li-doped CuxO TFTs on polyimide substrates, using ZrOx as a gate dielectric layer, demonstrates its compatibility with flexible electronics. This approach enhances the electrical performance of p-type CuxO TFTs and presents a scalable and efficient pathway for the development of advanced TFT technology in flexible electronics.","PeriodicalId":100623,"journal":{"name":"IEEE Journal on Flexible Electronics","volume":"3 6","pages":"228-233"},"PeriodicalIF":0.0000,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Alkali Metal Doping on Sol–Gel-Derived Copper Oxide for Performance Enhancement of Thin-Film Transistors\",\"authors\":\"Seokhyeon Baek;Jun-Gyu Choi;Sungjun Park\",\"doi\":\"10.1109/JFLEX.2024.3407687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In recent years, copper oxide (CuxO) has emerged as a promising p-type oxide semiconductor owing to its high Hall mobility. However, its inherent drawbacks, such as the substantial native defects and uncontrolled stoichiometry, limit its application in thin-film transistors (TFTs) for energy-efficient complementary devices. In this study, we employ the sol-gel synthetic approach for facile doping to investigate the doping effects of alkali metals (Li, Na, and K) on the electrical performance of CuxO TFTs. The results demonstrate that doping, particularly with lithium (Li), significantly improves the electrical performance of CuxO TFTs. The similarity in ionic radius facilitates efficient hole transport, which considerably enhances the field-effect mobility (\\n<inline-formula> <tex-math>$4.7\\\\times 10^{-3}$ </tex-math></inline-formula>\\n cm2/Vs), subthreshold swing (SS) (8.3 V/dec), and on-off current ratio (~104) with minimized hysteresis. The structural analysis of the Li-doped CuxO films using X-ray diffraction (XRD) does not exhibit any significant lattice distortion and an increase in the grain size implies the reduction of trap sites. Consequently, the successful fabrication of Li-doped CuxO TFTs on polyimide substrates, using ZrOx as a gate dielectric layer, demonstrates its compatibility with flexible electronics. This approach enhances the electrical performance of p-type CuxO TFTs and presents a scalable and efficient pathway for the development of advanced TFT technology in flexible electronics.\",\"PeriodicalId\":100623,\"journal\":{\"name\":\"IEEE Journal on Flexible Electronics\",\"volume\":\"3 6\",\"pages\":\"228-233\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal on Flexible Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10545585/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Flexible Electronics","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10545585/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
近年来,氧化铜(CuxO)因其高霍尔迁移率而成为一种前景广阔的 p 型氧化物半导体。然而,其固有的缺陷,如大量的原生缺陷和不可控的化学计量,限制了其在薄膜晶体管(TFT)高能效互补器件中的应用。在本研究中,我们采用溶胶-凝胶合成法进行了简单掺杂,研究了碱金属(Li、Na 和 K)对 CuxO TFT 电性能的掺杂效应。结果表明,掺杂(尤其是锂)能显著提高 CuxO TFT 的电气性能。离子半径的相似性促进了有效的空穴传输,从而大大提高了场效应迁移率(4.7/times 10^{-3}$ cm2/Vs)、阈下摆动(SS)(8.3 V/dec)和导通电流比(~104),并最大限度地减少了滞后。利用 X 射线衍射 (XRD) 对掺锂 CuxO 薄膜进行的结构分析并未发现任何明显的晶格畸变,晶粒尺寸的增加意味着陷阱点的减少。因此,利用氧化锆作为栅极电介质层,在聚酰亚胺衬底上成功制造出掺锂 CuxO TFT,证明了它与柔性电子器件的兼容性。这种方法提高了 p 型 CuxO TFT 的电气性能,为柔性电子产品中先进 TFT 技术的发展提供了一条可扩展的高效途径。
Alkali Metal Doping on Sol–Gel-Derived Copper Oxide for Performance Enhancement of Thin-Film Transistors
In recent years, copper oxide (CuxO) has emerged as a promising p-type oxide semiconductor owing to its high Hall mobility. However, its inherent drawbacks, such as the substantial native defects and uncontrolled stoichiometry, limit its application in thin-film transistors (TFTs) for energy-efficient complementary devices. In this study, we employ the sol-gel synthetic approach for facile doping to investigate the doping effects of alkali metals (Li, Na, and K) on the electrical performance of CuxO TFTs. The results demonstrate that doping, particularly with lithium (Li), significantly improves the electrical performance of CuxO TFTs. The similarity in ionic radius facilitates efficient hole transport, which considerably enhances the field-effect mobility (
$4.7\times 10^{-3}$
cm2/Vs), subthreshold swing (SS) (8.3 V/dec), and on-off current ratio (~104) with minimized hysteresis. The structural analysis of the Li-doped CuxO films using X-ray diffraction (XRD) does not exhibit any significant lattice distortion and an increase in the grain size implies the reduction of trap sites. Consequently, the successful fabrication of Li-doped CuxO TFTs on polyimide substrates, using ZrOx as a gate dielectric layer, demonstrates its compatibility with flexible electronics. This approach enhances the electrical performance of p-type CuxO TFTs and presents a scalable and efficient pathway for the development of advanced TFT technology in flexible electronics.