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Applications of Surface Science最新文献

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Off-specular and out-of-plane vibrational electron energy loss spectra of benzene and pyridine adsorbed on Pt(110) 苯和吡啶在Pt(110)上吸附的非镜面和面外振动电子能量损失谱
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90071-6
G.L. Nyberg, S.R. Bare, P. Hofmann, D.A. King, M. Surman
{"title":"Off-specular and out-of-plane vibrational electron energy loss spectra of benzene and pyridine adsorbed on Pt(110)","authors":"G.L. Nyberg,&nbsp;S.R. Bare,&nbsp;P. Hofmann,&nbsp;D.A. King,&nbsp;M. Surman","doi":"10.1016/0378-5963(85)90071-6","DOIUrl":"10.1016/0378-5963(85)90071-6","url":null,"abstract":"<div><p>The VEEL spectra of benzene, deuterobenzene, and pyridine adsorbed on Pt(110) at room temperature have been examined in emission planes both coincident with and orthogonal to the plane of incidence. The inelastic peak intensities are found to be almost independent of angle in both directions. This implies that neither of the established mechanisms, nor others presently examined, is an adequate description of the scattering. It also leads to a reassignment of the benzene spectrum.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 392-403"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90071-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91511687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Surface intermediates in the reaction of methanol, formaldehyde and methyl formate on copper (110) 甲醇、甲醛和甲酸甲酯在铜上反应的表面中间体(110)
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90072-8
B.A. Sexton, A.E. Hughes, N.R. Avery
{"title":"Surface intermediates in the reaction of methanol, formaldehyde and methyl formate on copper (110)","authors":"B.A. Sexton,&nbsp;A.E. Hughes,&nbsp;N.R. Avery","doi":"10.1016/0378-5963(85)90072-8","DOIUrl":"10.1016/0378-5963(85)90072-8","url":null,"abstract":"<div><p>The adsorption and reactions of methanol, methyl formate and formaldehyde on clean and oxygen-covered copper (110) surfaces has been studied with EELS, UPS and temperature programmed desorption (TPD). We report spectroscopic data for (a) the condensed multilayers at 90 K, (b) the surface monolayers and (c) the reaction intermediates formate (HCOO) and methoxy (CH<sub>3</sub>O) generated by reaction with surface atomic oxygen. On the clean surface methanol and methyl formate bond via the oxygen and carbonyl lone pair orbitals, whereas formaldehyde always polymerizes to surface paraformaldehyde above 120 K. Atomic oxygen generates methoxy by reaction with methanol and formate by reaction with formaldehyde as reported previously. Methyl formate undergoes nucleophilic attack to form both methoxy and formate in the presence of atomic oxygen, in a similar fashion to the reaction on Ag (110). Whereas the oxidation reactions of these molecules on copper catalysts can be explained with reference to the observed intermediates, no evidence is found for the dimerization of formaldehyde or the dehydrogenation of methanol to form methyl formate: reactions which are quite facile under higher pressure conditions.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 404-414"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90072-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73409069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Chemically deposited alloy semiconductor thin films 化学沉积合金半导体薄膜
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90244-2
M. Skyllas-Kazacos, J.F. McCann, R. Arruzza
{"title":"Chemically deposited alloy semiconductor thin films","authors":"M. Skyllas-Kazacos,&nbsp;J.F. McCann,&nbsp;R. Arruzza","doi":"10.1016/0378-5963(85)90244-2","DOIUrl":"10.1016/0378-5963(85)90244-2","url":null,"abstract":"<div><p>The chemical deposition method has been employed in the preparation of alloy semiconductor thin films. Thin films of Cd<sub>1−<em>x</em></sub>Hg<sub><em>x</em></sub>S and Cd<sub>1−<em>x</em></sub>Pb<sub><em>x</em></sub>S alloys were deposited onto titanium substrates from thiourea solutions. A monotonic decrease in the bandgaps of the semiconductor alloys was obtained as the Hg and Pb ratio was increased. Bandgap values of 1.8 and 1.6eV were measured for electrodes with a Hg: Cd ratio and a Pb: Cd ratio of 0.18 respectively, considerably lower than the bandgap of pure CdS.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1091-1097"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90244-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74422966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Photoelectron yield in x-ray grazing-incidence diffraction x射线掠入射衍射中的光电子产率
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90058-3
R.M. Imamov, E.Kh. Mukhamedzhanov, A.V. Maslov, E.M. Pashaev, A.M. Afanas'ev
{"title":"Photoelectron yield in x-ray grazing-incidence diffraction","authors":"R.M. Imamov,&nbsp;E.Kh. Mukhamedzhanov,&nbsp;A.V. Maslov,&nbsp;E.M. Pashaev,&nbsp;A.M. Afanas'ev","doi":"10.1016/0378-5963(85)90058-3","DOIUrl":"10.1016/0378-5963(85)90058-3","url":null,"abstract":"<div><p>Peculiarities of the photoelectron yield in conditions of X-ray grazing-incidence diffraction are discussed. The high sensitivity of photoelectron emission angular dependence on structural perfection of the crystal subsurface layers is demonstrated. A method for evaluation of the escape depths of photoelectrons with different energies is proposed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 259-266"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90058-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75303308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A toroidal angle-resolving electron spectrometer for surface studies 用于表面研究的环形角分辨电子光谱仪
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90052-2
R.C.G. Leckey, J.D. Riley
{"title":"A toroidal angle-resolving electron spectrometer for surface studies","authors":"R.C.G. Leckey,&nbsp;J.D. Riley","doi":"10.1016/0378-5963(85)90052-2","DOIUrl":"10.1016/0378-5963(85)90052-2","url":null,"abstract":"<div><p>An electron spectrometer with toroidal geometry has been developed which enables angularly resolved spectra to be obtained simultaneously at a large number of angles. This reduces data acquisition times by a factor of 100 and makes accessible many experiments on surfaces and interfaces which involve reactive materials or which require long experiment times. Photoelectron spectra of gases are presented which demonstrate the analyzer's energy and angular resolution showing it to be more than adequate for surface studies.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 196-205"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90052-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75532059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ion-beam-induced isotope composition changes in metal surfaces and recoil implantation 离子束诱导金属表面同位素组成变化及反冲注入
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90038-8
J. Okano, T. Ochiai, H. Nishimura
{"title":"Ion-beam-induced isotope composition changes in metal surfaces and recoil implantation","authors":"J. Okano,&nbsp;T. Ochiai,&nbsp;H. Nishimura","doi":"10.1016/0378-5963(85)90038-8","DOIUrl":"10.1016/0378-5963(85)90038-8","url":null,"abstract":"<div><p>It was found that the isotope ratios of <sup>58</sup>Ni/<sup>60</sup>Ni and <sup>63</sup>Cu/<sup>65</sup>Cu measured by SIMS changed by a few percent at the initial stage of ion bombardment for well-polished pure metal samples. A similar change was also found for silver, palladium, titanium and chromium targets. The isotope ratios, the light to the heavy, for the fresh surfaces were low at first and increased with time to reach constant values as the ion bombardment continued. It was pointed out that the main process able to induce such a large mass effect would be preferential recoil implantation of isotopes by primary ions.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 72-81"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90038-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84071242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Molecular cluster calculations for the analysis of CO chemisorption on the Rh(110) surface 用于分析CO在Rh(110)表面化学吸附的分子簇计算
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90076-5
Pei-Lin Cao, Yue Wu, Yun-Qi Chen, De-Juan Zheng
{"title":"Molecular cluster calculations for the analysis of CO chemisorption on the Rh(110) surface","authors":"Pei-Lin Cao,&nbsp;Yue Wu,&nbsp;Yun-Qi Chen,&nbsp;De-Juan Zheng","doi":"10.1016/0378-5963(85)90076-5","DOIUrl":"10.1016/0378-5963(85)90076-5","url":null,"abstract":"<div><p>Self-consistent Hartree-Fock-Slater molecular cluster calculations for the chemisorption of carbon monoxide on a Rh(110) surface both at on-top and at on-fourfold “pocket” sites are presented. The calculations are performed using Rh<sub>5</sub>CO clusters, with the carbon-oxygen distance equal to the free molecular value. The bond energy on the on-top site is found to be about two times larger than on the on-fourfold site and the optimized <em>d</em><sub>Rh-C</sub> is equal to 1.80 and 1.85 Å for the on-top and the on-fourfold sites respectively. In the total DOS and difference curve for the on-top site, the 4g̃s, 1g̃p + 5g̃s, and CO 2π-induced peaks are located 10.2, 7.2, and 3.0 eV below <em>E</em><sub>F</sub>, in good agreement with the UPS results. The CO 2π-induced peak is stronger for the on-fourfold site, and the CO 2π orbital will gain more electrons (0.83 compared with 0.55 for the on-top site) if in some way CO is chemisorbed on this site.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 452-458"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90076-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91442020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compositional analysis of thin film amorphous semiconductors and insulators using LIMA 用LIMA分析薄膜非晶半导体和绝缘体的成分
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90226-0
G.J. Smith, D.J. Eagle, W.I. Milne
{"title":"Compositional analysis of thin film amorphous semiconductors and insulators using LIMA","authors":"G.J. Smith,&nbsp;D.J. Eagle,&nbsp;W.I. Milne","doi":"10.1016/0378-5963(85)90226-0","DOIUrl":"10.1016/0378-5963(85)90226-0","url":null,"abstract":"<div><p>LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si:H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 930-936"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90226-0","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87360712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impurity-induced surface acoustic wave attenuation in doped amorphous GeH thin films 掺杂非晶GeH薄膜中杂质诱导的表面声波衰减
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90208-9
K.L. Bhatia, S. Hunklinger
{"title":"Impurity-induced surface acoustic wave attenuation in doped amorphous GeH thin films","authors":"K.L. Bhatia,&nbsp;S. Hunklinger","doi":"10.1016/0378-5963(85)90208-9","DOIUrl":"10.1016/0378-5963(85)90208-9","url":null,"abstract":"<div><p>The technique of surface acoustic wave (SAW) has been applied to doped amorphous GeH films to gain information on the nature of defects. The attenuation of SAW of 300 MHz and 1.5 GHz has been measured in sputtered films of a-GeH doped with P or B at temperatures between 0.5 and 475 K. Sound velocity measurements are also made. A strong absorption maximum at low temperature is observed in a-Ge(H,P) and a-Ge(H,B) films. Distinct effects of annealing on the attenuation and velocity of SAW are observed. These impurity induced features are discussed in the light of acoustoelectric interaction. It is interesting to observe that a-Ge(H,B) film seems to have tunneling states characteristic of glasses.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 756-762"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90208-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88202686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A DLTS technique for surface state capture cross-section measurement of MOS diodes 用于MOS二极管表面态捕获截面测量的DLTS技术
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90234-X
Dipankar Sengupta, M.Mohan Chandra, Vikram Kumar
{"title":"A DLTS technique for surface state capture cross-section measurement of MOS diodes","authors":"Dipankar Sengupta,&nbsp;M.Mohan Chandra,&nbsp;Vikram Kumar","doi":"10.1016/0378-5963(85)90234-X","DOIUrl":"10.1016/0378-5963(85)90234-X","url":null,"abstract":"<div><p>A modified DLTS technique is proposed for the direct measurement of capture cross-section of MOS surface states. The nature of temperature and energy dependence <em>σ</em><sub>n</sub> is inferred from data analysis. Temperature dependence of <em>σ</em><sub>n</sub> is shown to be consistent with the observed DLTS line shapes.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1004-1010"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90234-X","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78687637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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