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Applications of Surface Science最新文献

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Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system 隧道MIS系统中薄氧化层隧穿传输概率的测定
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90235-1
A.G. Nassibian, A.K. Duong
{"title":"Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system","authors":"A.G. Nassibian,&nbsp;A.K. Duong","doi":"10.1016/0378-5963(85)90235-1","DOIUrl":"10.1016/0378-5963(85)90235-1","url":null,"abstract":"<div><p>A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1011-1018"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90235-1","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89800596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Surface intermediates in the reaction of methanol, formaldehyde and methyl formate on copper (110) 甲醇、甲醛和甲酸甲酯在铜上反应的表面中间体(110)
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90072-8
B.A. Sexton, A.E. Hughes, N.R. Avery
{"title":"Surface intermediates in the reaction of methanol, formaldehyde and methyl formate on copper (110)","authors":"B.A. Sexton,&nbsp;A.E. Hughes,&nbsp;N.R. Avery","doi":"10.1016/0378-5963(85)90072-8","DOIUrl":"10.1016/0378-5963(85)90072-8","url":null,"abstract":"<div><p>The adsorption and reactions of methanol, methyl formate and formaldehyde on clean and oxygen-covered copper (110) surfaces has been studied with EELS, UPS and temperature programmed desorption (TPD). We report spectroscopic data for (a) the condensed multilayers at 90 K, (b) the surface monolayers and (c) the reaction intermediates formate (HCOO) and methoxy (CH<sub>3</sub>O) generated by reaction with surface atomic oxygen. On the clean surface methanol and methyl formate bond via the oxygen and carbonyl lone pair orbitals, whereas formaldehyde always polymerizes to surface paraformaldehyde above 120 K. Atomic oxygen generates methoxy by reaction with methanol and formate by reaction with formaldehyde as reported previously. Methyl formate undergoes nucleophilic attack to form both methoxy and formate in the presence of atomic oxygen, in a similar fashion to the reaction on Ag (110). Whereas the oxidation reactions of these molecules on copper catalysts can be explained with reference to the observed intermediates, no evidence is found for the dimerization of formaldehyde or the dehydrogenation of methanol to form methyl formate: reactions which are quite facile under higher pressure conditions.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 404-414"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90072-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73409069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Chemically deposited alloy semiconductor thin films 化学沉积合金半导体薄膜
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90244-2
M. Skyllas-Kazacos, J.F. McCann, R. Arruzza
{"title":"Chemically deposited alloy semiconductor thin films","authors":"M. Skyllas-Kazacos,&nbsp;J.F. McCann,&nbsp;R. Arruzza","doi":"10.1016/0378-5963(85)90244-2","DOIUrl":"10.1016/0378-5963(85)90244-2","url":null,"abstract":"<div><p>The chemical deposition method has been employed in the preparation of alloy semiconductor thin films. Thin films of Cd<sub>1−<em>x</em></sub>Hg<sub><em>x</em></sub>S and Cd<sub>1−<em>x</em></sub>Pb<sub><em>x</em></sub>S alloys were deposited onto titanium substrates from thiourea solutions. A monotonic decrease in the bandgaps of the semiconductor alloys was obtained as the Hg and Pb ratio was increased. Bandgap values of 1.8 and 1.6eV were measured for electrodes with a Hg: Cd ratio and a Pb: Cd ratio of 0.18 respectively, considerably lower than the bandgap of pure CdS.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1091-1097"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90244-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74422966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Photoelectron yield in x-ray grazing-incidence diffraction x射线掠入射衍射中的光电子产率
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90058-3
R.M. Imamov, E.Kh. Mukhamedzhanov, A.V. Maslov, E.M. Pashaev, A.M. Afanas'ev
{"title":"Photoelectron yield in x-ray grazing-incidence diffraction","authors":"R.M. Imamov,&nbsp;E.Kh. Mukhamedzhanov,&nbsp;A.V. Maslov,&nbsp;E.M. Pashaev,&nbsp;A.M. Afanas'ev","doi":"10.1016/0378-5963(85)90058-3","DOIUrl":"10.1016/0378-5963(85)90058-3","url":null,"abstract":"<div><p>Peculiarities of the photoelectron yield in conditions of X-ray grazing-incidence diffraction are discussed. The high sensitivity of photoelectron emission angular dependence on structural perfection of the crystal subsurface layers is demonstrated. A method for evaluation of the escape depths of photoelectrons with different energies is proposed.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 259-266"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90058-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75303308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A toroidal angle-resolving electron spectrometer for surface studies 用于表面研究的环形角分辨电子光谱仪
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90052-2
R.C.G. Leckey, J.D. Riley
{"title":"A toroidal angle-resolving electron spectrometer for surface studies","authors":"R.C.G. Leckey,&nbsp;J.D. Riley","doi":"10.1016/0378-5963(85)90052-2","DOIUrl":"10.1016/0378-5963(85)90052-2","url":null,"abstract":"<div><p>An electron spectrometer with toroidal geometry has been developed which enables angularly resolved spectra to be obtained simultaneously at a large number of angles. This reduces data acquisition times by a factor of 100 and makes accessible many experiments on surfaces and interfaces which involve reactive materials or which require long experiment times. Photoelectron spectra of gases are presented which demonstrate the analyzer's energy and angular resolution showing it to be more than adequate for surface studies.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 196-205"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90052-2","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75532059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The synthesis of tellurium oxide by high dose oxygen ion-implantation 大剂量氧离子注入法合成氧化碲
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90201-6
Amarjit Singh, E.J. Knystautas, R. Lapointe
{"title":"The synthesis of tellurium oxide by high dose oxygen ion-implantation","authors":"Amarjit Singh,&nbsp;E.J. Knystautas,&nbsp;R. Lapointe","doi":"10.1016/0378-5963(85)90201-6","DOIUrl":"10.1016/0378-5963(85)90201-6","url":null,"abstract":"<div><p>High dose ion-implantation was used to synthesize stoichiometric TeO<sub>2</sub> layers over tellurium films at 30 keV. Using infrared absorption spectroscopy it was concluded that the stoichiometric layer could be produced with <sup>16</sup>O<sub>2</sub><sup>+</sup> ions to a fluence of 4.8×10<sup>17</sup> ions cm<sup>−2</sup>, which is in close agreement with the estimated oxygen dose.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 681-685"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90201-6","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75675713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
X-ray diffraction investigations on Au/Si alloy films Au/Si合金薄膜的x射线衍射研究
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90196-5
W. Fischer , P. Wissmann, H. Zitzmann
{"title":"X-ray diffraction investigations on Au/Si alloy films","authors":"W. Fischer ,&nbsp;P. Wissmann,&nbsp;H. Zitzmann","doi":"10.1016/0378-5963(85)90196-5","DOIUrl":"10.1016/0378-5963(85)90196-5","url":null,"abstract":"<div><p>Gold/silicon binary mixtures are prepared by depositing thin gold films onto Si(111) single crystals and subsequently annealing at various temperatures. The structure of the films is studied in situ with the help of an ultra-high-vacuum X-ray diffraction chamber. After deposition at room temperature the gold films are homogeneous with a plane-parallel morphology. After annealing at 630 K the Au 111 peak suddenly disappears in the X-ray spectrum indicating that a eutectic melt has been formed. Cooling leads to a regeneration of the peak at 590 K. This temperature is distinctly smaller than the eutectic temperature reported in the literature (643 K). Obviously small gold islands are formed which are embedded into the silicon surface.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 638-644"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90196-5","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83695408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ion-beam-induced isotope composition changes in metal surfaces and recoil implantation 离子束诱导金属表面同位素组成变化及反冲注入
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90038-8
J. Okano, T. Ochiai, H. Nishimura
{"title":"Ion-beam-induced isotope composition changes in metal surfaces and recoil implantation","authors":"J. Okano,&nbsp;T. Ochiai,&nbsp;H. Nishimura","doi":"10.1016/0378-5963(85)90038-8","DOIUrl":"10.1016/0378-5963(85)90038-8","url":null,"abstract":"<div><p>It was found that the isotope ratios of <sup>58</sup>Ni/<sup>60</sup>Ni and <sup>63</sup>Cu/<sup>65</sup>Cu measured by SIMS changed by a few percent at the initial stage of ion bombardment for well-polished pure metal samples. A similar change was also found for silver, palladium, titanium and chromium targets. The isotope ratios, the light to the heavy, for the fresh surfaces were low at first and increased with time to reach constant values as the ion bombardment continued. It was pointed out that the main process able to induce such a large mass effect would be preferential recoil implantation of isotopes by primary ions.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 72-81"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90038-8","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84071242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impurity-induced surface acoustic wave attenuation in doped amorphous GeH thin films 掺杂非晶GeH薄膜中杂质诱导的表面声波衰减
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90208-9
K.L. Bhatia, S. Hunklinger
{"title":"Impurity-induced surface acoustic wave attenuation in doped amorphous GeH thin films","authors":"K.L. Bhatia,&nbsp;S. Hunklinger","doi":"10.1016/0378-5963(85)90208-9","DOIUrl":"10.1016/0378-5963(85)90208-9","url":null,"abstract":"<div><p>The technique of surface acoustic wave (SAW) has been applied to doped amorphous GeH films to gain information on the nature of defects. The attenuation of SAW of 300 MHz and 1.5 GHz has been measured in sputtered films of a-GeH doped with P or B at temperatures between 0.5 and 475 K. Sound velocity measurements are also made. A strong absorption maximum at low temperature is observed in a-Ge(H,P) and a-Ge(H,B) films. Distinct effects of annealing on the attenuation and velocity of SAW are observed. These impurity induced features are discussed in the light of acoustoelectric interaction. It is interesting to observe that a-Ge(H,B) film seems to have tunneling states characteristic of glasses.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 756-762"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90208-9","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88202686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of CdTe films formed by compound vacuum evaporation 复合真空蒸发制备碲化镉薄膜的性能
Applications of Surface Science Pub Date : 1985-05-01 DOI: 10.1016/0378-5963(85)90205-3
M.B. Winn, L.E. Lyons
{"title":"Properties of CdTe films formed by compound vacuum evaporation","authors":"M.B. Winn,&nbsp;L.E. Lyons","doi":"10.1016/0378-5963(85)90205-3","DOIUrl":"10.1016/0378-5963(85)90205-3","url":null,"abstract":"<div><p>CdTe thin films formed by compound evaporation onto glass substrates, held at between 40 and 460°C, exhibited abrupt changes of physical properties at ca. 270°C. The resistivity changed from 0.1 ω m to 100 kω m, and a marked increase in crystallinity and absorption edge sharpness was noted. These changes resulted from a decrease in the free tellurium content of the films at ca. 270°C.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 724-730"},"PeriodicalIF":0.0,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90205-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85378121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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