{"title":"隧道MIS系统中薄氧化层隧穿传输概率的测定","authors":"A.G. Nassibian, A.K. Duong","doi":"10.1016/0378-5963(85)90235-1","DOIUrl":null,"url":null,"abstract":"<div><p>A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 1011-1018"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90235-1","citationCount":"2","resultStr":"{\"title\":\"Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system\",\"authors\":\"A.G. Nassibian, A.K. Duong\",\"doi\":\"10.1016/0378-5963(85)90235-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 1011-1018\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90235-1\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system
A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.
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