Properties of CdTe films formed by compound vacuum evaporation

Abstract

CdTe thin films formed by compound evaporation onto glass substrates, held at between 40 and 460°C, exhibited abrupt changes of physical properties at ca. 270°C. The resistivity changed from 0.1 ω m to 100 kω m, and a marked increase in crystallinity and absorption edge sharpness was noted. These changes resulted from a decrease in the free tellurium content of the films at ca. 270°C.