{"title":"复合真空蒸发制备碲化镉薄膜的性能","authors":"M.B. Winn, L.E. Lyons","doi":"10.1016/0378-5963(85)90205-3","DOIUrl":null,"url":null,"abstract":"<div><p>CdTe thin films formed by compound evaporation onto glass substrates, held at between 40 and 460°C, exhibited abrupt changes of physical properties at ca. 270°C. The resistivity changed from 0.1 ω m to 100 kω m, and a marked increase in crystallinity and absorption edge sharpness was noted. These changes resulted from a decrease in the free tellurium content of the films at ca. 270°C.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 724-730"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90205-3","citationCount":"5","resultStr":"{\"title\":\"Properties of CdTe films formed by compound vacuum evaporation\",\"authors\":\"M.B. Winn, L.E. Lyons\",\"doi\":\"10.1016/0378-5963(85)90205-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>CdTe thin films formed by compound evaporation onto glass substrates, held at between 40 and 460°C, exhibited abrupt changes of physical properties at ca. 270°C. The resistivity changed from 0.1 ω m to 100 kω m, and a marked increase in crystallinity and absorption edge sharpness was noted. These changes resulted from a decrease in the free tellurium content of the films at ca. 270°C.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 724-730\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90205-3\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
当温度保持在40 ~ 460℃之间时，在玻璃衬底上形成的碲化镉薄膜的物理性质在270℃左右发生突变。电阻率从0.1 ω m增加到100 km ω m，结晶度和吸收边缘锐度明显增加。这些变化是由于在约270°C时薄膜的游离碲含量减少所致。
Properties of CdTe films formed by compound vacuum evaporation
CdTe thin films formed by compound evaporation onto glass substrates, held at between 40 and 460°C, exhibited abrupt changes of physical properties at ca. 270°C. The resistivity changed from 0.1 ω m to 100 kω m, and a marked increase in crystallinity and absorption edge sharpness was noted. These changes resulted from a decrease in the free tellurium content of the films at ca. 270°C.
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