{"title":"大剂量氧离子注入法合成氧化碲","authors":"Amarjit Singh, E.J. Knystautas, R. Lapointe","doi":"10.1016/0378-5963(85)90201-6","DOIUrl":null,"url":null,"abstract":"<div><p>High dose ion-implantation was used to synthesize stoichiometric TeO<sub>2</sub> layers over tellurium films at 30 keV. Using infrared absorption spectroscopy it was concluded that the stoichiometric layer could be produced with <sup>16</sup>O<sub>2</sub><sup>+</sup> ions to a fluence of 4.8×10<sup>17</sup> ions cm<sup>−2</sup>, which is in close agreement with the estimated oxygen dose.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 681-685"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90201-6","citationCount":"5","resultStr":"{\"title\":\"The synthesis of tellurium oxide by high dose oxygen ion-implantation\",\"authors\":\"Amarjit Singh, E.J. Knystautas, R. Lapointe\",\"doi\":\"10.1016/0378-5963(85)90201-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>High dose ion-implantation was used to synthesize stoichiometric TeO<sub>2</sub> layers over tellurium films at 30 keV. Using infrared absorption spectroscopy it was concluded that the stoichiometric layer could be produced with <sup>16</sup>O<sub>2</sub><sup>+</sup> ions to a fluence of 4.8×10<sup>17</sup> ions cm<sup>−2</sup>, which is in close agreement with the estimated oxygen dose.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 681-685\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90201-6\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The synthesis of tellurium oxide by high dose oxygen ion-implantation
High dose ion-implantation was used to synthesize stoichiometric TeO2 layers over tellurium films at 30 keV. Using infrared absorption spectroscopy it was concluded that the stoichiometric layer could be produced with 16O2+ ions to a fluence of 4.8×1017 ions cm−2, which is in close agreement with the estimated oxygen dose.
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