x射线掠入射衍射中的光电子产率

R.M. Imamov, E.Kh. Mukhamedzhanov, A.V. Maslov, E.M. Pashaev, A.M. Afanas'ev
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引用次数: 0

摘要

讨论了x射线掠入射衍射条件下光电子产率的特性。证明了晶体亚表面层结构完善程度对光电子发射角依赖性的高灵敏度。提出了一种评价不同能量光电子逃逸深度的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photoelectron yield in x-ray grazing-incidence diffraction

Peculiarities of the photoelectron yield in conditions of X-ray grazing-incidence diffraction are discussed. The high sensitivity of photoelectron emission angular dependence on structural perfection of the crystal subsurface layers is demonstrated. A method for evaluation of the escape depths of photoelectrons with different energies is proposed.

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